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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFBA1405P

Name: IRFBA1405P
Brand: Infineon Technologies
SKU: IRFBA1405P
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBA1405P

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-273AA

Datasheet:: IRFBA1405P.pdf

Description:: MOSFET N-CH 55V 174A SUPER-220

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFBA1405P from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in Super-220™ package, rated for 55V V_DSS, 5.0 mΩ R_DS(on) at V_GS = 10 V, and 174 A continuous drain current at T_C = 25°C. It operates up to 175°C junction temperature, supports repetitive avalanche, and features fast switching with 13 ns turn-on delay and 110 ns fall time. It is used in high-current industrial motor drives where low conduction loss and thermal robustness are critical.

For engineers reviewing the IRFBA1405P datasheet, IRFBA1405P pinout, IRFBA1405P application, or IRFBA1405P equivalent, key selection criteria include its 5.0 mΩ on-resistance at 101 A, 560 mJ single-pulse avalanche energy, Super-220™ mechanical compatibility with TO-220 footprints, 175°C operating temperature, and automotive-qualified ruggedness per AEC-Q101.

Technical Context

This MOSFET employs planar stripe silicon technology optimized for ultra-low R_DS(on) per die area and enhanced avalanche ruggedness. Its gate charge profile (Q_g = 170–260 nC) and low C_iss (5480 pF) support efficient high-frequency switching in hard-switched topologies.

The integrated body diode exhibits V_SD = 1.3 V at 101 A and T_J = 25°C, with trr = 88–130 ns and Q_rr = 250–380 nC under di/dt = 100 A/μs - enabling reliable freewheeling in bridge configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; defines safe operation in 48 V bus systems with transient margin.
R_DS(on)	4.3–5.0 mΩ @ V_GS = 10 V, I_D = 101 A - Enables <1 W conduction loss at 100 A, reducing heatsink requirements.
I_D (T_C = 25°C)	174 A - Continuous current rating with case-mounted heatsinking; enables single-device replacement of paralleled TO-220s.
E_AS	560 mJ - Single-pulse avalanche energy at T_J = 25°C; supports unclamped inductive switching in motor phase-legs.
T_J max	175°C - Junction temperature limit; allows sustained operation in sealed enclosures or high-ambient industrial environments.
Q_g	170–260 nC - Total gate charge determines driver strength requirement; ~2.2 A peak needed for 100 ns switching at 10 V swing.
R_θJC	0.45°C/W - Junction-to-case thermal resistance; enables direct thermal interface to heatsink without insulator penalty.

Pinout & Package

The IRFBA1405P is housed in the Super-220™ package - a TO-220-compatible outline with enhanced thermal and current-handling capability due to larger die area and optimized internal construction. It uses standard 3-lead through-hole mounting with tab-connected drain.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power output terminal / heat path	Electrically and thermally connected to metal tab; must be isolated from chassis unless system ground referenced.
Source	Power return / reference node for gate drive	Low-inductance source connection critical for stable switching; internal LS = 4.5–7.5 nH affects di/dt-induced ringing.
Gate	Control input for channel modulation	High-impedance CMOS-compatible input; requires <260 nC charge for full enhancement; sensitive to ESD.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.3 mΩ typical at 101 A - reduces I²R losses by >30% vs. comparable TO-220 MOSFETs, lowering system thermal load.
Repetitive avalanche rated	Rated per JEDEC JESD24-11 - enables reliable operation under short-circuit or inductive fault conditions without immediate failure.
Super-220™ package	TO-220 footprint with TO-247-level current capacity - eliminates PCB redesign when upgrading from TO-220 or replacing multiple devices.
AEC-Q101 qualified	Automotive-grade stress testing passed - validates reliability for industrial motor drives requiring extended lifetime and field stability.
175°C operation	Extended junction temperature range - permits use in compact, fanless enclosures where ambient exceeds 105°C.

Applications

Industrial Motor Drive

DC-DC Converter (48 V Input)

Use Scenario: Three-phase inverter stage in 5–10 kW HVAC compressors with forced-air cooling.

IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT-replacement half-bridge topology.

Use Value: 5.0 mΩ R_DS(on) cuts conduction loss by 42% vs. legacy TO-220 MOSFETs, enabling 98.1% peak efficiency at 8 kW output.

Use Scenario: Primary-side synchronous rectifier in isolated 48 V → 12 V LLC resonant converter for telecom power shelves.

IC Role / Device Role / Timing Role: Secondary-side synchronous FET operating at 200–300 kHz with zero-voltage switching.

Use Value: Low Q_rr (250–380 nC) and fast trr (88–130 ns) minimize body-diode conduction loss during dead-time, improving light-load regulation.

Uninterruptible Power Supply (UPS)

Electric Vehicle Onboard Charger (OBC)

Use Scenario: Bidirectional DC link switch in 3 kVA online UPS with battery backup and grid synchronization.

IC Role / Device Role / Timing Role: High-current bidirectional switch handling both inverter and rectifier modes.

Use Value: Repetitive avalanche rating ensures survival during grid transients and battery reversal events without external clamping.

Use Scenario: AC/DC PFC boost switch in 6.6 kW OBC with wide-input (90–265 VAC) and high-efficiency target (>96%).

IC Role / Device Role / Timing Role: Main boost switch operating in continuous conduction mode at 65–100 kHz.

Use Value: 174 A I_D rating supports peak currents >130 A during line dips, eliminating need for parallel devices in compact OBC designs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N65M5	650 V V_DSS, 0.042 Ω R_DS(on), TO-247 package, 48 A I_D	Higher voltage, lower current, larger package - suited for 400 V DC bus, not 48 V motor drive.	Select only if system requires >500 V blocking and can accommodate TO-247 footprint and thermal mass.
IXFH50N60P	600 V V_DSS, 0.065 Ω R_DS(on), TO-247, 50 A I_D, no AEC-Q101	Higher voltage rating but 3.5× higher R_DS(on); lacks automotive qualification and 175°C rating.	Acceptable for non-automotive 400 V industrial SMPS where ruggedness and temperature margin are secondary.

Compared with STW48N65M5 and IXFH50N60P, the IRFBA1405P delivers 174 A current handling in a TO-220-compatible outline with 5.0 mΩ on-resistance and AEC-Q101 validation - making it uniquely suitable for space-constrained, high-current 48–60 V industrial and automotive auxiliary power systems.

Availability

IRFBA1405P is available at Aetrix Electronics and suitable for industrial motor drives, 48 V DC-DC converters, uninterruptible power supplies, and electric vehicle onboard chargers requiring stable component supply and long-term production continuity.

Supply support for IRFBA1405P includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRFBA1405P belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial and automotive applications demanding low R_DS(on), rugged avalanche performance, and extended temperature operation.

FAQ

Is IRFBA1405P pin-compatible with standard TO-220 MOSFETs?

Yes - the Super-220™ package maintains identical mechanical outline, mounting hole spacing, and lead pitch as industry-standard TO-220. Drain (tab), source, and gate terminals align directly, enabling drop-in replacement without PCB modification. However, the tab is electrically connected to drain, requiring appropriate isolation if mounted to grounded heatsinks.

What is the maximum recommended gate drive voltage for IRFBA1405P?

The absolute maximum V_GS is ±20 V, but the device is fully enhanced at V_GS = 10 V and specified for R_DS(on) at that level. Driving above 15 V provides minimal R_DS(on) improvement while increasing gate oxide stress and risk of overvoltage damage during transients. A 12 V gate drive with active clamping is optimal for reliability and performance balance.

Does IRFBA1405P require a gate resistor for safe operation?

Yes - a series gate resistor (typically 5–22 Ω) is required to control dV/dt and di/dt during switching, suppress oscillation from parasitic inductance, and limit peak gate current. Without it, the 260 nC total gate charge and low gate impedance can cause overshoot, shoot-through in half-bridges, and accelerated gate oxide degradation under repeated hard switching.

Can IRFBA1405P be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (0.057 V/°C) ensures inherent current sharing across paralleled units. For stable operation, match devices from same wafer lot, use symmetrical layout with equal gate and source inductance, and implement individual gate resistors. Derate total current by 15% versus sum of individual ratings to account for thermal coupling.

IRFBA1405P Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-273AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 174A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 101A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-220™ (TO-273AA)

IRFBA1405P FAQ

1.How can I place an order for IRFBA1405P through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBA1405P on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBA1405P reliable?

The price and inventory of IRFBA1405P are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBA1405P is usually 5 days.

3.What payment methods are accepted for IRFBA1405P?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBA1405P transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBA1405P?

IRFBA1405P orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBA1405P order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBA1405P?

For technical support, including IRFBA1405P datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBA1405P requirements.

6.How does Aetrix verify that IRFBA1405P is sourced from the original manufacturer or authorized distributors?

All IRFBA1405P products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBA1405P meets industry standards.

7.What is the process for return or replacement of IRFBA1405P?

All IRFBA1405P units undergo pre-shipment inspection (PSI). If there is an issue with IRFBA1405P, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBA1405P part is unused and in its original packaging.

Return procedure for IRFBA1405P:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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