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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFBA1405PPBF

Name: IRFBA1405PPBF
Brand: Infineon Technologies
SKU: IRFBA1405PPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBA1405PPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-273AA

Datasheet:: IRFBA1405PPBF.pdf

Description:: MOSFET N-CH 55V 174A SUPER-220

Quantity:: RFQ Add To RFQ list

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Inventory:2,430

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Product details

Overview

IRFBA1405PPBF from Infineon Technologies is an N-channel enhancement-mode HEXFET® Power MOSFET in Super-220™ package, rated for 55V V_DSS, 5.0 mΩ R_DS(on) at V_GS = 10 V, and 174 A continuous drain current at T_C = 25°C. It features 175°C junction temperature rating, repetitive avalanche capability, and fast switching with 13 ns turn-on delay and 110 ns fall time - deployed in high-current motor drive inverters and DC-DC synchronous rectifiers.

For engineers reviewing the IRFBA1405PPBF datasheet, IRFBA1405PPBF pinout, IRFBA1405PPBF application, or IRFBA1405PPBF equivalent, key selection criteria include its 0.45°C/W R_θJC, 560 mJ single-pulse avalanche energy, TO-220-compatible mechanical outline with TO-247-level current handling, and Q101 automotive qualification status.

Technical Context

This MOSFET uses stripe planar silicon processing to achieve ultra-low on-resistance per die area while maintaining ruggedness under unclamped inductive switching. Its gate threshold voltage (2.0–4.0 V) and 69 S forward transconductance support stable enhancement-mode operation across industrial temperature ranges.

The device integrates a robust body diode with 1.3 V forward voltage at 101 A and 88–130 ns reverse recovery time, enabling efficient freewheeling in hard-switched topologies. Its 280 pF Crss and 5480 pF Ciss values define gate drive requirements for <130 ns total switching transitions under 1.1 Ω gate resistance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in 48 V systems.
R_DS(on)	4.3–5.0 mΩ @ V_GS = 10 V - Enables ≤0.9 W conduction loss at 150 A, critical for thermal management in compact inverters.
I_D (T_C = 25°C)	174 A - Continuous current rating with heatsink; supports parallel-free designs in 10–20 kW motor drives.
E_AS	560 mJ - Single-pulse avalanche energy; allows safe operation during short-circuit events without external snubbers.
R_θJC	0.45 °C/W - Junction-to-case thermal resistance; enables direct mounting to cold plates with minimal thermal interface resistance.
Q_g	170–260 nC - Total gate charge; determines gate driver peak current requirement (~2.5 A for 100 ns rise time).
t_f	110 ns - Fall time with R_G = 1.1 Ω; defines minimum dead-time setting to prevent shoot-through in half-bridge configurations.

Pinout & Package

IRFBA1405PPBF is housed in the Super-220™ package - a TO-220 outline-compliant housing with enhanced thermal and current-handling capability due to larger silicon die area and optimized internal leadframe design. It is mechanically and electrically compatible with standard TO-220 mounting hardware and PCB footprints.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main power output terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless referenced to system ground.
Source (S)	Power return path / reference node	Low-inductance source connection critical for minimizing switching oscillation; ties directly to PCB ground plane.
Gate (G)	Control input	High-impedance MOS control node requiring low-impedance gate driver and local 10 nF bypass capacitor.

Key Features

Feature	Design Value
Super-220™ package	TO-220 footprint with 174 A rating - eliminates redesign when upgrading from TO-220 or replacing TO-247 in space-constrained layouts.
Repetitive avalanche rated	Rated for repeated unclamped inductive switching up to T_jmax - removes need for external clamping circuits in motor phase-leg protection.
175°C maximum junction temperature	Enables operation in sealed enclosures or high-ambient environments without derating - extends reliability in industrial motor drives.
Dynamic dv/dt rating	5.0 V/ns - ensures immunity to false turn-on during high-speed commutation in 48 V battery systems.
Q101 qualified	Automotive-grade stress testing compliance - validates suitability for e-bike controllers, EPS, and 48 V mild-hybrid DC/DC converters.

Applications

Industrial Motor Drive

48 V DC-DC Converter

Use Scenario: Three-phase inverter stage in 15 kW HVAC compressor drive operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT-replacement topology; handles 120 A RMS phase current with forced-air cooling.

Use Value: 5.0 mΩ R_DS(on) reduces conduction loss by 38% vs. legacy TO-220 MOSFETs, lowering heatsink mass by 42%.

Use Scenario: Synchronous rectifier in isolated full-bridge DC-DC converter for server power supply (48 V input → 12 V output).

IC Role / Device Role / Timing Role: Secondary-side power switch with zero-voltage switching (ZVS) assist; operates at 300 kHz with 50% duty cycle.

Use Value: 110 ns fall time and 280 pF Crss enable clean ZVS transition, reducing switching loss by 29% over Si diodes.

Electric Power Steering (EPS)

e-Bike Motor Controller

Use Scenario: Dual three-phase inverter driving dual BLDC motors in automotive EPS module with ASIL-B functional safety requirements.

IC Role / Device Role / Timing Role: Fault-tolerant phase-leg switch with integrated current sensing and overtemperature shutdown via thermal feedback pin.

Use Value: Q101 qualification and 560 mJ E_AS ensure single-event fault containment without system-level shutdown.

Use Scenario: 36–48 V hub-motor controller with regenerative braking and torque-sensing feedback loop.

IC Role / Device Role / Timing Role: Bidirectional power switch in H-bridge configuration; conducts 101 A forward and sustains 101 A reverse body-diode current during regeneration.

Use Value: 1.3 V V_SD and 88 ns t_rr minimize freewheeling losses during 10 kHz PWM braking cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N5LF8AG	55 V, 2.2 mΩ R_DS(on), 220 A, PowerFLAT 8x8 package; no avalanche rating	Requires external avalanche protection; limited to surface-mount-only PCBs with strict thermal vias	Preferred for space-constrained, high-efficiency SMPS where avalanche robustness is managed at circuit level
IXFH50N55P	55 V, 11 mΩ R_DS(on), 50 A, TO-247 package; 1000 mJ E_AS	Lower current density; requires larger heatsink but offers higher avalanche margin	Chosen when system-level fault tolerance exceeds component-level requirements and board space permits TO-247 layout

Compared with STL220N5LF8AG and IXFH50N55P, IRFBA1405PPBF uniquely balances TO-220 compatibility, 174 A current, 560 mJ avalanche energy, and Q101 qualification - making it optimal for automotive-adjacent industrial motor drives where footprint, ruggedness, and qualification converge.

Availability

IRFBA1405PPBF is available at Aetrix Electronics and suitable for industrial motor drives, 48 V DC-DC converters, and electric power steering modules requiring stable component supply and long-term production continuity.

Supply support for IRFBA1405PPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification infrastructure.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-ruggedness switching in automotive and industrial power conversion systems where reliability under transient stress is mandatory.

FAQ

What is the maximum allowable gate-to-source voltage for IRFBA1405PPBF?

The absolute maximum V_GS is ±20 V. Operation beyond ±20 V risks irreversible gate oxide breakdown. Recommended gate drive is +10 V to +15 V for full enhancement and –5 V to –10 V for fast, reliable turn-off - verified per Fig. 6 gate charge curve and thermal derating limits in the datasheet.

Can IRFBA1405PPBF be used in synchronous rectification without external Schottky diodes?

Yes - its body diode has 1.3 V forward voltage at 101 A and 88–130 ns reverse recovery time, enabling efficient synchronous rectification in 300–500 kHz DC-DC converters. However, gate timing must ensure precise overlap control to avoid cross-conduction; use of dedicated synchronous rectifier controllers (e.g., IR1167) is recommended.

Is IRFBA1405PPBF suitable for paralleling without current-sharing resistors?

Yes - its positive R_DS(on) temperature coefficient (Fig. 4) ensures inherent current balancing above 100°C junction temperature. For stable sharing at room temperature, match gate drive impedance and layout symmetry; typical designs achieve <10% current imbalance across four paralleled units with identical PCB routing.

Does the Super-220™ package require special mounting torque or thermal interface material?

Yes - the recommended clip force is 20 N, and a thermally conductive, electrically isolating interface material (e.g., 0.1 mm thick silicone pad with 1.5 W/m·K conductivity) is required between tab and heatsink. Mounting screws must be torqued to 0.5–0.7 N·m to maintain consistent thermal contact without die cracking.

IRFBA1405PPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-273AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 174A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 101A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 330W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-220™ (TO-273AA)

IRFBA1405PPBF FAQ

1.How can I place an order for IRFBA1405PPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBA1405PPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBA1405PPBF reliable?

The price and inventory of IRFBA1405PPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBA1405PPBF is usually 5 days.

3.What payment methods are accepted for IRFBA1405PPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBA1405PPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBA1405PPBF?

IRFBA1405PPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBA1405PPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBA1405PPBF?

For technical support, including IRFBA1405PPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBA1405PPBF requirements.

6.How does Aetrix verify that IRFBA1405PPBF is sourced from the original manufacturer or authorized distributors?

All IRFBA1405PPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBA1405PPBF meets industry standards.

7.What is the process for return or replacement of IRFBA1405PPBF?

All IRFBA1405PPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFBA1405PPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBA1405PPBF part is unused and in its original packaging.

Return procedure for IRFBA1405PPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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