Infineon Technologies IRFBA90N20DPBF

Overview

IRFBA90N20DPBF from Infineon Technologies is a 200V, 98A N-channel enhancement-mode HEXFET Power MOSFET in Super-220™ package, featuring R_DS(on) = 0.023Ω at V_GS = 10V, Q_g = 160 nC (typ), and 960 mJ single-pulse avalanche energy - designed for high-frequency DC-DC converters requiring low switching loss and robust unclamped inductive switching.

For engineers reviewing the IRFBA90N20DPBF datasheet, IRFBA90N20DPBF pinout, IRFBA90N20DPBF application, or IRFBA90N20DPBF equivalent, key selection criteria include its 0.23°C/W junction-to-case thermal resistance, 7500 pF C_oss at V_DS = 1.0V, 220 ns diode reverse recovery time, and validated operation up to T_J = 175°C in hard-switched SMPS topologies.

Technical Context

This MOSFET employs planar silicon process with optimized charge balance for low R_DS(on) × Q_g figure-of-merit (≈2.3 Ω·nC). Its body diode exhibits 1.5 V forward voltage at 59 A and 220 ns trr under di/dt = 100 A/µs, enabling reliable synchronous rectification and freewheeling in phase-shifted full-bridge converters.

The device integrates fully characterized C_oss(eff) = 790 pF (0–160 V ramp), enabling accurate snubberless soft-switching design. Avalanche ruggedness is confirmed at I_AS = 59 A and E_AS = 960 mJ, supporting operation in unclamped inductive loads without external protection.

Key Specifications

Pinout & Package

IRFBA90N20DPBF uses the Super-220™ package (TO-220AB variant with enhanced thermal pad), where the drain is internally connected to the metal tab for low-inductance, high-current path and direct heatsinking. The case is electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage power MOSFET applications.

Compared with STW90NF20 and IXTH90N20L2, IRFBA90N20DPBF offers the best balance of low R_DS(on), moderate Q_g, and industry-leading C_oss(eff) characterization - making it optimal for high-frequency, high-efficiency SMPS where design predictability and thermal management are critical.

Availability

IRFBA90N20DPBF is available at Aetrix Electronics and suitable for server VRMs, industrial UPS inverters, telecom rectifiers, and EV onboard charger PFC stages requiring stable component supply and long-term production continuity.

Supply support for IRFBA90N20DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and qualification to AEC-Q101 and IEC 60747 standards.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies operating above 100 kHz with demanding thermal and ruggedness requirements.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFBA90N20DPBF supports 71 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to reduced channel mobility and increased R_DS(on) at elevated temperatures, and assumes proper heatsinking with ≤0.73°C/W total thermal resistance from junction to ambient.

Is the Super-220™ package electrically isolated from the PCB mount surface?

No - the metal tab (drain) is electrically connected to the internal die substrate and must be insulated from the heatsink using a thermally conductive but electrically isolating pad or washer. The package does not integrate an isolation layer; electrical isolation is achieved externally via mounting hardware per application requirements.

Does this MOSFET support gate drive voltages below 10 V?

Yes - the gate threshold voltage V_GS(th) is rated 3.0–5.0 V, and the device delivers usable R_DS(on) down to V_GS = 6 V (≈0.035 Ω). However, full 98 A rating and minimum R_DS(on) require V_GS ≥ 10 V; operation at 8 V yields ~0.028 Ω and ~85 A continuous current at T_C = 25°C.

How is the effective output capacitance (C_oss(eff)) measured and why does it matter?

C_oss(eff) = 790 pF is derived from the energy integral ∫C_oss(V) dV over 0–160 V, normalized to a fixed capacitance yielding identical charging time. It matters because it directly determines ZVS turn-on timing in resonant converters - unlike static C_oss values, C_oss(eff) enables accurate dead-time calculation without curve-fitting or empirical tuning.