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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFBL3315

Name: IRFBL3315
Brand: Infineon Technologies
SKU: IRFBL3315
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFBL3315

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: Super D2-Pak

Datasheet:: IRFBL3315.pdf

Description:: MOSFET N-CH 150V 21A SUPER D2PAK

Quantity:: RFQ Add To RFQ list

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Inventory:5,101

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Product details

Overview

IRFBL3315 from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 150 V V_DS, 33 A continuous drain current at T_C = 25°C, and 15 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a main switch in offline SMPS, DC-DC converters, and motor control circuits requiring fast switching and low conduction loss.

For engineers reviewing the IRFBL3315 datasheet, IRFBL3315 pinout, IRFBL3315 application, or IRFBL3315 equivalent, key selection criteria include its 150 V blocking voltage, 33 A thermal-current capability, TO-220 mechanical footprint, gate threshold of 2.0–4.0 V, and suitability for hard-switched flyback and forward converter topologies.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with optimized cell pitch and trench-assisted drift region to achieve low R_DS(on) × Q_g figure-of-merit. Its body diode exhibits 55 ns reverse recovery time (t_rr) and 120 A peak reverse recovery current (I_RRM) under specified test conditions.

The device operates with gate charge of 68 nC (Q_g), input capacitance C_iss = 2700 pF at V_DS = 25 V, and output capacitance C_oss = 490 pF - parameters critical for optimizing gate drive loss and EMI in high-frequency switching applications up to 500 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - maximum drain-to-source blocking voltage; defines safe operating range in 110/220 VAC offline inputs with margin.
I_D (continuous)	33 A @ T_C = 25°C - usable current level with heatsink; derates to ~21 A at T_C = 100°C.
R_DS(on)	15 mΩ (typ) @ V_GS = 10 V - determines conduction loss; yields ≤1.65 W loss at 33 A.
V_GS(th)	2.0–4.0 V - ensures reliable turn-on with standard 5 V or 10 V gate drivers; not logic-level compatible below 4.5 V.
Q_g	68 nC - total gate charge; sets minimum gate driver current requirement (~1.4 A avg for 50 ns rise time).
t_rr	55 ns - body diode reverse recovery time; impacts snubber design and switching loss in freewheeling paths.

Pinout & Package

IRFBL3315 is housed in a through-hole TO-220AB package with isolated tab (non-conductive mounting surface). The case is electrically connected to the drain terminal.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path from source to load	Electrically tied to metal tab; requires insulating washer when mounted to heatsink.
Source	Reference node for gate drive and current return	Common connection point for sense resistor and low-side gate driver reference.
Gate	Control electrode for channel formation	High-impedance input; requires <10 Ω series resistance to suppress ringing during fast switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g	1.02 Ω·nC - enables high-efficiency operation in 100–300 kHz SMPS without forced air cooling.
Fast body diode	t_rr = 55 ns, Q_rr = 42 nC - reduces commutation loss in synchronous rectification and half-bridge freewheeling.
100% avalanche rated	Single-pulse E_AS = 420 mJ - withstands inductive energy dump without failure in unclamped inductive switching.
Lead-free and RoHS compliant	Meets IPC-J-STD-609 Class 1 moisture sensitivity - supports lead-free reflow and long-term reliability in industrial environments.

Applications

AC-DC Adapter

Industrial Motor Drive

Use Scenario: 65 W universal-input offline flyback converter powering USB-C PD adapters.

IC Role / Device Role / Timing Role: Primary-side main switch controlling energy transfer into transformer; switched at 65 kHz with ZVS-assisted soft start.

Use Value: 15 mΩ R_DS(on) limits conduction loss to <1.2 W at full load, enabling >89% efficiency without active cooling.

Use Scenario: 1.5 kW three-phase inverter driving permanent magnet synchronous motor in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switch in IGBT/MOSFET hybrid inverter leg; handles 25 A RMS phase current with 10 kHz PWM.

Use Value: 55 ns t_rr minimizes cross-conduction risk during shoot-through prevention, reducing gate driver complexity.

DC-DC Telecom Converter

LED Driver Power Stage

Use Scenario: 48 V input, 12 V/30 A isolated forward converter for telecom shelf power.

IC Role / Device Role / Timing Role: Synchronous rectifier on secondary side; driven by transformer-coupled gate signal.

Use Value: Low Q_g/R_DS(on) ratio allows efficient self-driven synchronous rectification at 250 kHz with minimal external components.

Use Scenario: Constant-current 350 mA LED string driver with dimming via PWM at 1 kHz.

IC Role / Device Role / Timing Role: High-side switch modulating current through buck inductor; duty cycle controlled by microcontroller.

Use Value: 2.0–4.0 V V_GS(th) ensures clean turn-on with 3.3 V GPIO, eliminating need for level-shifting circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF15	R_DS(on) = 100 mΩ (higher), I_D = 16 A (lower), TO-220 package	Lower current handling; suitable only for ≤20 W designs	Select if cost-sensitive and thermal budget allows higher conduction loss.
IPP120N15N3	R_DS(on) = 10.5 mΩ (lower), I_D = 120 A, TO-220FP package (full-pack)	Higher current rating but larger thermal footprint; requires different heatsink interface	Prefer for >50 A peak loads where board space permits larger package.

Compared with STP16NF15 and IPP120N15N3, IRFBL3315 delivers optimal balance of 33 A current capability, 15 mΩ on-resistance, and standard TO-220 mechanical compatibility - making it ideal for mid-power industrial and consumer power supplies where thermal management and layout constraints are tightly coupled.

Availability

IRFBL3315 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial motor drives, DC-DC telecom converters, and LED driver power stages requiring stable component supply across multi-year production cycles.

Supply support for IRFBL3315 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

IRFBL3315 belongs to Infineon's legacy HEXFET® Generation 3 power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial and consumer power conversion systems.

FAQ

Is IRFBL3315 a logic-level MOSFET?

No. IRFBL3315 has a gate threshold voltage range of 2.0–4.0 V and requires ≥10 V V_GS for full enhancement. Its R_DS(on) is specified at V_GS = 10 V, and it does not guarantee full turn-on at 3.3 V or 5 V logic levels - unlike IRL-series logic-level devices.

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature is 175°C. For reliable long-term operation, the datasheet recommends limiting T_J to ≤150°C under continuous conduction mode, with derating applied above T_C = 25°C per the thermal resistance curve (R_θJC = 1.0°C/W).

Can IRFBL3315 be used in parallel configurations?

Yes, but with precautions. Its positive temperature coefficient of R_DS(on) supports current sharing; however, matched gate drive impedance, symmetrical PCB layout, and individual source resistors (0.01–0.02 Ω) are required to ensure balanced dynamic current distribution and prevent thermal runaway.

Does IRFBL3315 have integrated ESD protection?

No. IRFBL3315 lacks on-chip ESD protection diodes. Gate oxide is sensitive to static discharge; handling requires grounded wrist straps, conductive foam, and strict adherence to JEDEC JS-001 Class 1B (≥250 V HBM) ESD control protocols during assembly and testing.

IRFBL3315 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: Super D2-Pak

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SUPER D2-PAK

IRFBL3315 FAQ

1.How can I place an order for IRFBL3315 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFBL3315 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFBL3315 reliable?

The price and inventory of IRFBL3315 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFBL3315 is usually 5 days.

3.What payment methods are accepted for IRFBL3315?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFBL3315 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFBL3315?

IRFBL3315 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFBL3315 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFBL3315?

For technical support, including IRFBL3315 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFBL3315 requirements.

6.How does Aetrix verify that IRFBL3315 is sourced from the original manufacturer or authorized distributors?

All IRFBL3315 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFBL3315 meets industry standards.

7.What is the process for return or replacement of IRFBL3315?

All IRFBL3315 units undergo pre-shipment inspection (PSI). If there is an issue with IRFBL3315, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFBL3315 part is unused and in its original packaging.

Return procedure for IRFBL3315:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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