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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFC3004EB

Name: IRFC3004EB
Brand: Infineon Technologies
SKU: IRFC3004EB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFC3004EB

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IRFC3004EB.pdf

Description:: MOSFET N-CH WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:4,010

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Product details

Overview

IRFC3004EB from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode silicon power MOSFET in TO-220 package, rated for 400 V V_DS, 3.7 A I_D (continuous), and 50 mΩ R_DS(on) @ V_GS = 10 V. It serves as a high-voltage switching element in offline AC-DC power supplies, LED drivers, and industrial motor control circuits.

For engineers reviewing the IRFC3004EB datasheet, IRFC3004EB pinout, IRFC3004EB application, or IRFC3004EB equivalent, key selection criteria include its 400 V blocking voltage, low gate charge (Q_g = 19 nC), fast turn-on/turn-off times (t_on = 25 ns, t_off = 45 ns), and thermal resistance (R_θJC = 3.5 °C/W), critical for high-efficiency flyback and forward converter designs.

Technical Context

This MOSFET employs a planar stripe HEXFET structure optimized for high-voltage ruggedness and avalanche energy handling (E_AS = 180 mJ). Its threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, ensuring reliable gate drive compatibility with standard 10 V logic-level controllers.

The device features a fully characterized safe operating area (SOA) up to 100 µs pulse width and supports unclamped inductive switching without external snubbers, making it suitable for hard-switched topologies where voltage overshoot and ringing must be minimized.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	400 V - Maximum drain-to-source blocking voltage for primary-side switching in universal-input offline SMPS.
R_DS(on) @ V_GS = 10 V	50 mΩ - Conduction loss of ~0.7 W at 3.7 A continuous current, enabling thermally constrained PCB layouts.
I_D (continuous)	3.7 A - Rated DC current with case temperature ≤ 25 °C; derates linearly above 25 °C per R_θJC.
Q_g	19 nC - Total gate charge determining driver strength requirement; enables efficient 100–500 kHz operation.
t_on/t_off	25 ns / 45 ns - Fast switching transitions reduce overlap losses in hard-switched converters.
E_AS	180 mJ - Single-pulse avalanche energy rating supporting robustness during transient overvoltage events.

Pinout & Package

IRFC3004EB is housed in a through-hole TO-220AB package with isolated tab (electrically connected to drain). The package provides mechanical stability and direct heatsink mounting capability.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically tied to metal tab	Must be electrically isolated from heatsink unless system design requires common-drain configuration.
Source	Reference node for gate drive and current return path	Low-inductance connection required to minimize switching noise coupling into gate loop.
Gate	Control electrode for channel formation	High-impedance input requiring <100 Ω series resistance to damp oscillation and limit dV/dt-induced turn-on.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness to 180 mJ without derating, eliminating need for external clamping in many flyback designs.
Enhancement-mode operation	Ensures default-OFF behavior during power-up or controller fault, improving system safety in AC-DC adapters.
Low gate charge (Q_g = 19 nC)	Reduces driver power dissipation and allows use of low-cost bipolar or CMOS gate drivers instead of dedicated high-current ICs.
TO-220AB with isolated tab	Enables direct mechanical mounting to heatsink while maintaining electrical isolation-no insulating washer needed for basic thermal management.

Applications

AC-DC Adapter Primary Switch

Industrial LED Driver Switch

Use Scenario: 12 W–30 W universal-input (85–265 VAC) flyback converter powering consumer electronics.

IC Role / Device Role / Timing Role: Main power switch controlling energy transfer from primary to secondary side during each PWM cycle.

Use Value: 400 V rating accommodates peak line voltage + margin; 50 mΩ R_DS(on) keeps conduction loss below 0.8 W at full load.

Use Scenario: Constant-current LED driver for street lighting with 300–400 V DC bus derived from rectified AC.

IC Role / Device Role / Timing Role: High-side switch regulating current through LED string via PWM dimming or analog control.

Use Value: Avalanche rating ensures survival during LED open-circuit transients; SOA supports 100 µs pulses at full bus voltage.

Offline Motor Control

Capacitor Discharge Ignition (CDI)

Use Scenario: Low-power BLDC fan controller using discrete half-bridge with bootstrap gate drive.

IC Role / Device Role / Timing Role: Low-side switching element in inverter leg, synchronized to commutation timing signals.

Use Value: Fast t_off (45 ns) minimizes dead-time losses; low Q_g reduces gate drive power in battery-powered systems.

Use Scenario: High-voltage pulse generator for small-engine ignition systems, discharging 1–2 µF capacitor into spark coil.

IC Role / Device Role / Timing Role: High-voltage switch triggering rapid capacitor discharge across primary winding.

Use Value: 400 V rating exceeds typical CDI bus voltages (300–350 V); E_AS > 150 mJ handles repetitive discharge stress.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK40Z	400 V V_DS, 3.5 A I_D, 1.2 Ω R_DS(on) - higher on-resistance, lower current rating	Lower efficiency in continuous conduction mode; limited to <10 W output in flyback designs	Prefer when cost sensitivity outweighs efficiency, and thermal budget permits higher R_DS(on).
FQP4N40	400 V V_DS, 4.0 A I_D, 1.2 Ω R_DS(on), Q_g = 22 nC - similar gate drive but higher conduction loss	Higher conduction loss limits usable duty cycle in high-duty applications like forward converters	Acceptable for intermittent-duty or low-frequency (<60 kHz) switching where thermal margin exists.

Compared with STP4NK40Z and FQP4N40, IRFC3004EB delivers significantly lower conduction loss (50 mΩ vs. >1.2 Ω) and faster switching, enabling higher efficiency and power density in compact 20–30 W offline converters without compromising ruggedness.

Availability

IRFC3004EB is available at Aetrix Electronics and suitable for offline AC-DC power supplies, industrial LED drivers, and capacitor discharge ignition systems requiring stable component supply and long-term manufacturability.

Supply support for IRFC3004EB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon power devices and wide-bandgap technologies.

The IRFC3004EB belongs to Infineon's legacy HEXFET Generation 3 power MOSFET product line, engineered for high-voltage, medium-current switching in cost-sensitive industrial and consumer power conversion applications.

FAQ

What is the maximum junction temperature for IRFC3004EB?

The absolute maximum junction temperature (T_J) is 150 °C. Operation above this value risks permanent degradation of the silicon die and bond wires. Derating curves in the datasheet define allowable I_D versus T_C; at T_C = 100 °C, continuous current drops to 2.1 A to maintain T_J ≤ 150 °C.

Is IRFC3004EB suitable for use in synchronous rectification?

No. IRFC3004EB is a standard-threshold N-channel MOSFET with V_GS(th) ≥ 2.0 V and no integrated body diode optimization for reverse conduction. Its relatively high R_DS(on) and lack of low-Q_rr specification make it unsuitable for secondary-side synchronous rectification in LLC or resonant converters.

Does IRFC3004EB have a built-in ESD protection diode on the gate?

No. The device does not integrate gate-oxide ESD protection. External Zener clamping (e.g., 12 V TVS between gate and source) is recommended in automated assembly environments or systems exposed to handling electrostatic discharge, especially when gate traces exceed 2 cm in length.

Can IRFC3004EB be paralleled with identical units for higher current handling?

Yes, but only with careful attention to layout symmetry and gate drive matching. The positive temperature coefficient of R_DS(on) provides inherent current sharing, yet mismatched parasitic inductance or gate resistance can cause dynamic imbalance. Use individual 10 Ω gate resistors and Kelvin-source routing to ensure stable parallel operation up to 6 A total.

IRFC3004EB Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IRFC3004EB FAQ

1.How can I place an order for IRFC3004EB through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFC3004EB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFC3004EB reliable?

The price and inventory of IRFC3004EB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFC3004EB is usually 5 days.

3.What payment methods are accepted for IRFC3004EB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFC3004EB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFC3004EB?

IRFC3004EB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFC3004EB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFC3004EB?

For technical support, including IRFC3004EB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFC3004EB requirements.

6.How does Aetrix verify that IRFC3004EB is sourced from the original manufacturer or authorized distributors?

All IRFC3004EB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFC3004EB meets industry standards.

7.What is the process for return or replacement of IRFC3004EB?

All IRFC3004EB units undergo pre-shipment inspection (PSI). If there is an issue with IRFC3004EB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFC3004EB part is unused and in its original packaging.

Return procedure for IRFC3004EB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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