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Infineon Technologies IRFC3205ZEB
- Part No.:
- IRFC3205ZEB
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
IRFC3205ZEB.pdf
- Description:
- MOSFET N-CH WAFER
- Quantity:
- Payment:
- Shipping:
Inventory:3,961
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Product details
Overview
IRFC3205ZEB from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 55 V VDS, 110 A ID (TC = 25°C), and 9.0 mΩ RDS(on) max at VGS = 10 V. It serves as a high-current, low-conduction-loss switching element in DC-DC converters, motor drives, and battery protection circuits.
For engineers reviewing the IRFC3205ZEB datasheet, IRFC3205ZEB pinout, IRFC3205ZEB application, or IRFC3205ZEB equivalent, key selection criteria include its 55 V breakdown voltage, 9.0 mΩ on-resistance at 10 V gate drive, 110 A continuous drain current capability, thermal resistance of 1.0°C/W (junction-to-case), and suitability for hard-switched industrial power stages requiring fast turn-on/turn-off with minimal conduction loss.
Technical Context
This MOSFET employs a planar silicon HEXFET structure optimized for low RDS(on) and robust avalanche energy rating (EAS = 470 mJ). Its gate threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, enabling reliable turn-on with standard 5 V or 10 V logic-level gate drivers.
The device features a fully characterized safe operating area (SOA) up to 10 ms, supports repetitive avalanche operation, and exhibits low gate charge (Qg = 85 nC typical) and output charge (Qoss = 220 nC), reducing switching losses in high-frequency PWM applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 55 V - Maximum drain-source blocking voltage; defines upper limit for DC bus or flyback clamp voltage in buck/boost topologies. |
| RDS(on) max | 9.0 mΩ @ VGS = 10 V - Directly determines conduction loss (I²R) in high-current paths; enables <1.1 W loss at 11 A RMS. |
| ID continuous | 110 A @ TC = 25°C - Specifies maximum steady-state current under ideal heatsinking; derates to ~70 A at TC = 100°C. |
| Qg | 85 nC typical - Gate charge required to fully switch device; impacts driver sizing and switching transition time in 100–500 kHz designs. |
| EAS | 470 mJ - Single-pulse avalanche energy rating; ensures survivability during inductive load turn-off transients without external snubbers. |
| RθJC | 1.0°C/W - Junction-to-case thermal resistance; enables accurate junction temperature estimation when mounted to heatsink with known interface resistance. |
Pinout & Package
IRFC3205ZEB uses the TO-220AB package (3-pin, straight lead, non-isolated tab). The metal tab is electrically connected to the drain terminal and must be insulated from chassis unless drain is referenced to ground.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current-carrying high-side node | Electrically tied to metal tab; requires insulating washer if mounted to grounded heatsink; handles full load current and voltage stress. |
| Source | Reference node for gate drive and current sensing | Common return path for load current; used as reference for low-side gate driver or shunt-based current monitoring. |
| Gate | Control electrode for channel modulation | High-impedance input requiring <85 nC charge for full enhancement; sensitive to ESD; must be driven with controlled slew rate to limit dV/dt-induced shoot-through. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) with 10 V gate drive | 9.0 mΩ enables <1.2 W conduction loss at 11 A, reducing heatsink size in 48 V battery systems. |
| Enhanced avalanche ruggedness | 470 mJ EAS allows reliable operation in inductive switching without snubber networks in motor H-bridge legs. |
| Fast switching with low Qg | 85 nC total gate charge supports efficient 200–300 kHz PWM in synchronous rectifiers and LLC resonant converters. |
| TO-220AB mechanical compatibility | Standard footprint and mounting hole pattern ensures drop-in replacement for legacy 55 V/100 A MOSFETs in existing PCB layouts. |
Applications
| Brushless DC Motor Drive | 48 V Battery Protection Switch |
|---|---|
Use Scenario: High-efficiency 3-phase inverter for e-bike or power tool motors operating from 36–48 V nominal battery packs. IC Role / Device Role / Timing Role: Low-side switching element in each half-bridge leg; commutated at 10–20 kHz with dead-time control. Use Value: 9.0 mΩ RDS(on) minimizes I²R loss during high-torque startup, extending runtime and reducing thermal stress on gate drivers. | Use Scenario: Bidirectional overcurrent and short-circuit protection for lithium-ion battery packs in UPS and portable medical devices. IC Role / Device Role / Timing Role: Main series pass transistor in active protection circuit; switched off within 100 µs upon fault detection. Use Value: 470 mJ avalanche rating absorbs energy from inductive kickback during rapid fault shutdown, preventing device failure. |
| DC-DC Synchronous Buck Converter | Industrial AC-DC PFC Stage |
Use Scenario: 500 W isolated DC-DC converter with 48 V input and 12 V output for telecom shelf power supplies. IC Role / Device Role / Timing Role: High-side synchronous rectifier MOSFET in primary-side active clamp forward topology. Use Value: Low Qg (85 nC) and Qoss (220 nC) reduce gate drive loss and improve light-load efficiency above 94%. | Use Scenario: Boost-type power factor correction stage in 1 kW industrial AC-DC front-end supplying servo drives. IC Role / Device Role / Timing Role: Main switching transistor in continuous conduction mode (CCM) boost converter operating at 65 kHz. Use Value: Robust SOA and 1.0°C/W RθJC support stable 110 A peak current pulses without thermal runaway under line surge conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60 V VDS, 55 A ID, 14 mΩ RDS(on) - lower current rating and higher on-resistance. | Best suited for ≤300 W loads where space or cost constraints preclude larger TO-220 devices. | Select when thermal budget permits higher conduction loss and peak current demand is below 60 A. |
| IXTH110N055T2 | 55 V VDS, 110 A ID, 6.5 mΩ RDS(on) - lower RDS(on) but TO-247 package requires PCB layout change. | Preferred for ultra-low-loss 500–800 W designs where heatsink attachment and board real estate allow TO-247 mounting. | Choose when minimizing conduction loss is critical and mechanical redesign is acceptable. |
Compared with STP55NF06L, IRFC3205ZEB delivers 22% lower RDS(on) and double the current rating; versus IXTH110N055T2, it trades 27% higher on-resistance for TO-220 compatibility and lower gate charge-driven drive complexity.
Availability
IRFC3205ZEB is available at Aetrix Electronics and suitable for industrial motor drives, 48 V battery management systems, and high-power DC-DC converters requiring stable component supply and long-term production continuity.
Supply support for IRFC3205ZEB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
IRFC3205ZEB belongs to Infineon's legacy HEXFET Power MOSFET product line, engineered for high-reliability, high-current switching in industrial power conversion and motor control applications where ruggedness and thermal stability are critical.
FAQ
Is IRFC3205ZEB a logic-level MOSFET?
No. IRFC3205ZEB is a standard-gate-threshold MOSFET with VGS(th) ranging from 2.0 V to 4.0 V and specified RDS(on) at VGS = 10 V. It is not optimized for direct 3.3 V or 5 V microcontroller drive; a gate driver with ≥10 V output is recommended for full enhancement and minimal conduction loss.
What is the maximum pulsed drain current (IDM) for IRFC3205ZEB?
The absolute maximum pulsed drain current is 440 A, defined under TC = 25°C with pulse width ≤ 10 µs and duty cycle ≤ 1%. This rating applies only to short-circuit or overload transient conditions and must be validated against SOA curves in the datasheet for specific operating temperatures and pulse durations.
Can IRFC3205ZEB be used in parallel configurations?
Yes, IRFC3205ZEB supports paralleling due to its positive temperature coefficient of RDS(on), which promotes current sharing. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, individual gate resistors (≥10 Ω), and thermal coupling via shared heatsink to ensure uniform junction temperature across devices.
Does IRFC3205ZEB have integrated ESD protection?
No. IRFC3205ZEB does not include on-die ESD protection structures. It is rated to Human Body Model (HBM) Class 1B (≤250 V), requiring standard ESD handling precautions during assembly-such as grounded workstations, ionized air, and static-dissipative packaging-to prevent gate oxide damage during PCB loading or rework.
IRFC3205ZEB Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
IRFC3205ZEB FAQ
1.How can I place an order for IRFC3205ZEB through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFC3205ZEB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFC3205ZEB reliable?
The price and inventory of IRFC3205ZEB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFC3205ZEB is usually 5 days.
3.What payment methods are accepted for IRFC3205ZEB?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFC3205ZEB transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFC3205ZEB?
IRFC3205ZEB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFC3205ZEB order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFC3205ZEB?
For technical support, including IRFC3205ZEB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFC3205ZEB requirements.
6.How does Aetrix verify that IRFC3205ZEB is sourced from the original manufacturer or authorized distributors?
All IRFC3205ZEB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFC3205ZEB meets industry standards.
7.What is the process for return or replacement of IRFC3205ZEB?
All IRFC3205ZEB units undergo pre-shipment inspection (PSI). If there is an issue with IRFC3205ZEB, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFC3205ZEB part is unused and in its original packaging.
Return procedure for IRFC3205ZEB:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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