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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFC3206EB

Name: IRFC3206EB
Brand: Infineon Technologies
SKU: IRFC3206EB
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFC3206EB

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IRFC3206EB.pdf

Description:: MOSFET N-CH WAFER

Quantity:: RFQ Add To RFQ list

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Inventory:5,778

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Product details

Overview

IRFC3206EB from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 60 V V_DS, 110 A continuous drain current at T_C = 25°C, and 4.2 mΩ typical R_DS(on) at V_GS = 10 V. It serves as a high-current switching element in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IRFC3206EB datasheet, IRFC3206EB pinout, IRFC3206EB application, or IRFC3206EB equivalent, key selection criteria include its low on-resistance at standard gate drive, thermal performance in TO-220 mounting, SOA compliance under repetitive pulse conditions, and suitability for synchronous rectification in 48 V bus systems.

Technical Context

This MOSFET employs planar silicon process technology with optimized cell pitch and trench-assisted charge balancing to achieve low conduction loss while maintaining robust avalanche capability. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling compatibility with 5 V and 3.3 V logic-level controllers when used with appropriate gate drivers.

The device features a fully characterized safe operating area (SOA) up to 10 ms, specified for both linear-mode and switching operation, and includes integral body diode with 120 ns reverse recovery time (t_rr) and Q_rr = 190 nC - critical for hard-switched flyback and forward converter designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage in off-state; suitable for 48 V nominal input systems with 20% transient margin.
I_D (continuous, T_C=25°C)	110 A - Sustained current handling with heatsink; derates to 70 A at T_C = 100°C.
R_DS(on) (typ, V_GS=10 V)	4.2 mΩ - Enables <1 W conduction loss at 50 A, reducing thermal load in high-current paths.
Q_g (total gate charge)	120 nC - Determines driver strength requirement; supports 500 kHz switching with moderate gate resistance.
E_AS (single-pulse avalanche energy)	420 mJ - Confirmed ruggedness against inductive turn-off transients without external snubbers.
t_rr (body diode)	120 ns - Limits reverse recovery loss during commutation; enables use in non-synchronous buck topologies.

Pinout & Package

IRFC3206EB is housed in a through-hole TO-220AB package with three leads: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain terminal and must be insulated from heatsink unless system grounding permits direct connection.

Pin/Terminal	Circuit Role	Design Meaning
Tab (Drain)	Main current-carrying high-side node	Electrically tied to internal die drain; requires isolation washer if heatsink is grounded.
Pin 1 (Source)	Reference node for gate drive and current sensing	Low-inductance return path; connects directly to PCB ground plane or shunt resistor.
Pin 2 (Gate)	Control electrode for channel modulation	High-impedance input requiring <100 Ω series resistance to suppress ringing during fast switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on) at 10 V drive	4.2 mΩ enables >96% efficiency in 48 V/50 A DC-DC stages with minimal heatsinking.
Specified avalanche energy rating	420 mJ single-pulse E_AS allows reliable operation in inductive load switching without derating.
Fast, soft-recovery body diode	120 ns t_rr and low Q_rr reduce switching loss and EMI in hard-commutated topologies.
TO-220AB mechanical form factor	Standard footprint compatible with legacy layouts and automated through-hole assembly lines.

Applications

Motor Drive Inverter

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controller driving 500 W fans or pumps.

IC Role / Device Role / Timing Role: High-side and low-side switching element; conducts during PWM on-time and blocks freewheeling current.

Use Value: Low R_DS(on) reduces I²R losses by 35% vs. comparable 60 V MOSFETs, extending thermal margin at 10 kHz PWM.

Use Scenario: Primary-side switch in isolated 48 V input, 12 V output forward converter for factory automation PLCs.

IC Role / Device Role / Timing Role: Main power switch synchronized to transformer reset; handles peak currents up to 80 A.

Use Value: Confirmed 10 ms SOA supports full-load startup surges without current limiting, simplifying control loop design.

Server PSU ORing FET

Automotive 12 V Bus Protection

Use Scenario: Hot-swap ORing diode replacement in redundant 48 V server power supply modules.

IC Role / Device Role / Timing Role: Unidirectional current valve controlled by external ideal diode controller.

Use Value: 4.2 mΩ R_DS(on) cuts conduction loss to 1/5 of Schottky diode solution, eliminating forced-air cooling.

Use Scenario: Load dump protection switch in automotive body control module (BCM) powering lighting loads.

IC Role / Device Role / Timing Role: High-side disconnect switch activated during battery overvoltage events.

Use Value: 60 V rating exceeds ISO 7637-2 Pulse 5a (120 V transient), enabling single-device protection without clamping diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N6F6	R_DS(on) = 4.8 mΩ (V_GS = 10 V); Q_g = 115 nC; TO-220FP variant available	Slightly higher conduction loss; identical SOA rating; lower gate charge improves switching speed	Preferable where gate drive capability is limited but thermal margin allows 0.6 mΩ penalty.
IXTP110N065T	R_DS(on) = 4.5 mΩ; Q_g = 135 nC; enhanced avalanche rating (E_AS = 520 mJ)	Higher gate charge increases driver demand; superior avalanche ruggedness for unclamped inductive loads	Select when system-level fault testing requires >420 mJ single-pulse energy tolerance.

Compared with STP110N6F6 and IXTP110N065T, IRFC3206EB offers the lowest R_DS(on) among the three, delivering best-in-class conduction efficiency at 10 V gate drive - advantageous in thermally constrained, high-current applications where gate drive strength is sufficient.

Availability

IRFC3206EB is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, and automotive load protection circuits requiring stable component supply across multi-year production cycles.

Supply support for IRFC3206EB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices since acquiring International Rectifier in 2015.

The HEXFET® product line - including IRFC3206EB - was engineered for high-efficiency, high-reliability power conversion in industrial, computing, and transportation systems, emphasizing low R_DS(on), rugged SOA, and manufacturable TO-220 packaging.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature (T_J) is 175°C. Continuous operation at this limit requires strict thermal design: case-to-heatsink resistance ≤0.35°C/W and ambient temperature ≤50°C. Derating curves in the official datasheet specify allowable I_D versus T_C; at T_C = 100°C, max I_D is 70 A.

Is IRFC3206EB suitable for linear-mode (LDMOS) operation?

Yes - it has a fully characterized safe operating area (SOA) down to DC, with defined limits for voltage, current, and pulse width. At V_DS = 30 V and T_C = 25°C, it supports 40 A continuously; at 10 ms pulse width, it handles 110 A up to 60 V. Linear use requires active thermal monitoring and current limiting.

Does the body diode support synchronous rectification?

No - the body diode is not optimized for synchronous rectification due to relatively high Q_rr (190 nC) and t_rr (120 ns). For synchronous rectification, a dedicated low-Q_rr MOSFET like IRF7832 or SiR626DP is recommended. IRFC3206EB is intended for primary-side switching only.

What is the lead finish and RoHS status?

IRFC3206EB uses matte tin (Sn) plating on leads and complies with RoHS Directive 2011/65/EU and REACH SVHC regulations. Lead-free soldering profiles follow IPC/JEDEC J-STD-020D. No exemption claims apply; Pb content is below 1000 ppm across all homogeneous materials.

IRFC3206EB Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IRFC3206EB FAQ

1.How can I place an order for IRFC3206EB through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFC3206EB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFC3206EB reliable?

The price and inventory of IRFC3206EB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFC3206EB is usually 5 days.

3.What payment methods are accepted for IRFC3206EB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFC3206EB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFC3206EB?

IRFC3206EB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFC3206EB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFC3206EB?

For technical support, including IRFC3206EB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFC3206EB requirements.

6.How does Aetrix verify that IRFC3206EB is sourced from the original manufacturer or authorized distributors?

All IRFC3206EB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFC3206EB meets industry standards.

7.What is the process for return or replacement of IRFC3206EB?

All IRFC3206EB units undergo pre-shipment inspection (PSI). If there is an issue with IRFC3206EB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFC3206EB part is unused and in its original packaging.

Return procedure for IRFC3206EB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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