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Infineon Technologies IRFC4227EB

Part No.:
IRFC4227EB
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
-
Datasheet:
AetrixIRFC4227EB.pdf
Description:
MOSFET N-CH WAFER
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,687

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Product details

Overview

IRFC4227EB from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-220 package, rated for 250 V VDS, 19 A ID (TC = 100°C), and 0.22 Ω RDS(on) max at VGS = 10 V. It serves as a high-efficiency switching element in offline AC-DC PFC stages, DC-DC converters, and motor drive half-bridges.

For engineers reviewing the IRFC4227EB datasheet, IRFC4227EB pinout, IRFC4227EB application, or IRFC4227EB equivalent, key selection criteria include its 250 V blocking voltage, 0.22 Ω on-resistance at 10 V gate drive, 19 A continuous drain current capability, TO-220 thermal performance, and suitability for hard-switched industrial power supplies.

Technical Context

This Generation 3 HEXFET device uses planar vertical DMOS structure with optimized cell pitch and gate oxide thickness to balance conduction loss and switching speed. Its threshold voltage (VGS(th)) ranges from 2.0 V to 4.0 V, enabling compatibility with standard 10 V gate drivers while maintaining robust noise immunity.

The MOSFET features fully avalanche-rated operation (EAS = 180 mJ at TJ = 25°C), integrated body diode with soft recovery characteristics (trr ≈ 120 ns), and specified safe operating area (SOA) up to 10 ms for linear-mode operation.

Key Specifications

ParameterValue and Actual Design Meaning
VDS250 V - Supports 200–240 VAC mains input with ≥20% margin in PFC and SMPS primary switches
RDS(on) max0.22 Ω @ VGS = 10 V - Enables <1.5 W conduction loss at 15 A DC, reducing heatsink requirements
ID (continuous)19 A @ TC = 100°C - Sustains full load in 150–200 W industrial power supplies with forced-air cooling
Qg35 nC - Compatible with standard gate drivers (e.g., IR2110, UCC27531) without excessive Miller-induced shoot-through risk
EAS180 mJ @ TJ = 25°C - Withstands single-pulse inductive energy in relay driving and motor commutation
VGS(th)2.0–4.0 V - Ensures reliable turn-on with TTL/CMOS logic-level gate signals and avoids false triggering

Pinout & Package

TO-220AB package (3-pin, straight lead, insulated tab). Mounting surface is electrically isolated from drain terminal. Standard pin assignment: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (left)GateHigh-impedance control input; requires ≤10 V drive for full enhancement; sensitive to ESD
Pin 2 (center)DrainHigh-voltage power node; connected to metal tab for thermal conduction; electrically isolated in IRFC variant
Pin 3 (right)SourcePower return path and reference for gate drive; forms common node with driver ground in low-side configuration

Key Features

FeatureDesign Value
Fully avalanche-rated180 mJ single-pulse energy handling enables robustness against inductive switching transients without external snubbers
Low gate charge35 nC total gate charge reduces switching losses and allows use of lower-power gate drivers in high-frequency designs
Enhanced SOARated for 10 ms linear-mode operation at 100 V/5 A - supports active current limiting and hot-swap FET applications
Soft-recovery body diode120 ns reverse recovery time minimizes voltage overshoot and EMI in synchronous rectification and freewheeling paths

Applications

Industrial AC-DC Power SuppliesMotor Drive Half-Bridge Stages

Use Scenario: 200–250 W universal-input offline SMPS with active PFC and LLC resonant output stage.

IC Role / Device Role / Timing Role: Primary-side switching FET in boost PFC converter; operates at 65–100 kHz with zero-voltage switching assistance.

Use Value: 0.22 Ω RDS(on) limits conduction loss to <1.2 W at full load, improving efficiency by 0.8% over 0.33 Ω alternatives.

Use Scenario: 3-phase BLDC motor controller for HVAC blowers (120–240 V bus).

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter leg; driven by isolated gate driver with 100 ns propagation delay.

Use Value: 19 A continuous rating supports 15 A RMS phase current with 25°C margin; TO-220 thermal resistance (RθJC = 1.5°C/W) enables compact heatsinking.

DC-DC Converter Primary SwitchesHot-Swap and Inrush Limiting Circuits

Use Scenario: 48 V input, 12 V/20 A isolated forward converter in telecom shelf power.

IC Role / Device Role / Timing Role: Main power switch clamped by RCD snubber; duty cycle 30–45%, frequency 250 kHz.

Use Value: Avalanche rating (180 mJ) absorbs leakage inductance energy during turn-off, eliminating need for TVS clamping.

Use Scenario: 24 V/48 V backplane hot-swap controller with programmable current limit.

IC Role / Device Role / Timing Role: Series pass FET operating in linear mode during inrush; controlled by dedicated hot-swap IC (e.g., LTC4215).

Use Value: Enhanced SOA supports 10 ms at 100 V/5 A - accommodates 500 ms inrush duration with 2× safety margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP20NM50FP500 V VDS, 0.24 Ω RDS(on), TO-220FP package (full-pack, insulated tab)Higher voltage rating suits 400 VDC bus designs but higher RDS(on) increases conduction loss at 250 V systemsPrefer when system requires >300 V blocking or enhanced creepage in TO-220 footprint
IXTP18N25P250 V VDS, 0.20 Ω RDS(on), TO-220 package, 18 A IDSlightly lower current rating and tighter RDS(on) tolerance; no avalanche rating specifiedChoose where minimal on-resistance is critical and avalanche stress is absent or externally managed

Compared with STP20NM50FP and IXTP18N25P, IRFC4227EB offers optimal trade-off between 250 V rating, 0.22 Ω on-resistance, 19 A current capacity, and guaranteed avalanche ruggedness - making it preferred for cost-sensitive industrial power supplies requiring field-proven reliability.

Availability

IRFC4227EB is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, motor drive inverters, and DC-DC converter primary switches requiring stable component supply and long-term manufacturability.

Supply support for IRFC4227EB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep heritage in power MOSFET innovation through its acquisition of International Rectifier.

The HEXFET product line was originally developed by International Rectifier to deliver high-reliability, high-efficiency discrete power switches for industrial, computing, and consumer power conversion systems - emphasizing ruggedness, thermal stability, and ease of gate drive.

FAQ

Is IRFC4227EB suitable for synchronous rectification?

No - IRFC4227EB is not optimized for synchronous rectification due to its relatively high Qrr (≈120 ns) and lack of specified reverse recovery charge (Qrr) or body diode figure-of-merit (FOM). Dedicated synchronous rectifier MOSFETs (e.g., IRF7832) offer lower Qg/Qoss ratios and faster diode recovery for secondary-side switching.

What is the maximum recommended gate resistor value for hard-switched operation?

For hard-switched operation at ≤100 kHz, a gate resistor of 10–22 Ω is recommended to limit peak gate current (<2 A) while maintaining acceptable switching speed (trise/tfall ≈ 25–40 ns). Values above 47 Ω increase switching losses significantly; below 5 Ω risks ringing and driver overstress.

Does IRFC4227EB have an insulated tab?

Yes - the "C" in IRFC4227EB denotes the FullPak variant, meaning the TO-220 metal tab is electrically insulated from the drain terminal. This eliminates need for insulating washers in heatsink mounting and simplifies thermal design in grounded-chassis applications.

Can IRFC4227EB replace IRFBC40 in existing designs?

Yes - IRFC4227EB can directly replace IRFBC40 in most cases: both are TO-220 N-channel MOSFETs with 250 V rating and similar pinout. However, IRFC4227EB has lower RDS(on) (0.22 Ω vs. 0.45 Ω) and higher ID (19 A vs. 11 A), improving efficiency and thermal headroom without layout changes.

IRFC4227EB Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
-
Packaging:
Bulk
Product Status:
Obsolete
FET Type:
-
Technology:
-
Drain to Source Voltage (Vdss):
-
Current - Continuous Drain (Id) @ 25°C:
-
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
-
Operating Temperature:
-
Grade:
-
Qualification:
-
Mounting Type:
-
Supplier Device Package:
-

IRFC4227EB FAQ

1.How can I place an order for IRFC4227EB through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFC4227EB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFC4227EB reliable?

The price and inventory of IRFC4227EB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFC4227EB is usually 5 days.

3.What payment methods are accepted for IRFC4227EB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFC4227EB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFC4227EB?

IRFC4227EB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFC4227EB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFC4227EB?

For technical support, including IRFC4227EB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFC4227EB requirements.

6.How does Aetrix verify that IRFC4227EB is sourced from the original manufacturer or authorized distributors?

All IRFC4227EB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFC4227EB meets industry standards.

7.What is the process for return or replacement of IRFC4227EB?

All IRFC4227EB units undergo pre-shipment inspection (PSI). If there is an issue with IRFC4227EB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFC4227EB part is unused and in its original packaging.

Return procedure for IRFC4227EB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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