Infineon Technologies IRFC4310EF

Overview

IRFC4310EF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode silicon power MOSFET in TO-247AC package, rated for 900 V V_DS, 3.8 A I_D (T_C = 25°C), and 1.2 Ω R_DS(on) max at V_GS = 10 V. It serves as a high-voltage switching element in offline SMPS, AC-DC adapters, and industrial motor control inverters.

For engineers reviewing the IRFC4310EF datasheet, IRFC4310EF pinout, IRFC4310EF application, or IRFC4310EF equivalent, key selection criteria include its 900 V blocking capability, 1.2 Ω on-resistance at 10 V gate drive, TO-247AC thermal performance, and suitability for hard-switched flyback and forward converters operating up to 100 kHz.

Technical Context

This MOSFET employs planar stripe cell structure with optimized drift region doping for high-voltage ruggedness and controlled avalanche energy rating (E_AS = 110 mJ). Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, ensuring reliable turn-on with standard 10 V gate drivers while maintaining low leakage at 900 V.

The device features a fully isolated die attach and copper leadframe in TO-247AC, enabling 1.5 W/°C junction-to-case thermal resistance and supporting continuous operation at T_C ≤ 100°C. Its body diode exhibits Q_rr = 120 nC and t_rr = 190 ns under I_F = 3.8 A, 0.5 A/ns di/dt conditions.

Key Specifications

Pinout & Package

TO-247AC package: 3-pin through-hole outline with isolated tab (drain-connected), standard leadform, and 0.5 mm lead thickness. Mounting requires mechanical isolation from heatsink unless drain is system ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with IRFC4310EF, STW9N90K5 offers higher current headroom but larger gate charge, while IXTH3N90L trades 0.2 Ω higher on-resistance for superior avalanche reliability-making it preferable in repetitive high-dV/dt environments like CDI.

Availability

IRFC4310EF is available at Aetrix Electronics and suitable for industrial motor drives, offline AC-DC power supplies, high-voltage lighting ballasts, and capacitor discharge ignition systems requiring stable component supply across multi-year production cycles.

Supply support for IRFC4310EF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification to AEC-Q101 and IEC 60747 standards.

The IRFC4310EF belongs to Infineon's legacy HEXFET Generation 3 high-voltage MOSFET product line, engineered for rugged offline switching in industrial and lighting applications demanding >600 V blocking and controlled avalanche behavior.

FAQ

What is the maximum recommended gate-source voltage for IRFC4310EF?

The absolute maximum V_GS is ±30 V per datasheet. Continuous operation above ±20 V risks oxide degradation; standard design uses +10 V to ensure full enhancement while preserving long-term reliability. Gate drive circuits must clamp negative excursions to prevent parasitic turn-on during fast dV/dt transitions.

Can IRFC4310EF be used in synchronous rectification?

No-IRFC4310EF is not optimized for synchronous rectification. Its body diode has relatively high Q_rr (120 nC) and slow t_rr (190 ns), resulting in excessive reverse recovery loss. Synchronous rectifiers require low-Q_rr, fast-recovery MOSFETs such as Infineon OptiMOS or Silicon Carbide devices.

Is IRFC4310EF RoHS compliant and halogen-free?

Yes-IRFC4310EF meets RoHS Directive 2011/65/EU and is certified halogen-free per IEC 61249-2-21. Lead finish is matte tin (Sn), and packaging complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1) for unlimited floor life at ≤30°C/60% RH.

Does IRFC4310EF require a heatsink in typical operation?

Yes-under continuous 3.8 A drain current at 25°C case temperature, junction temperature exceeds 150°C without heatsinking. A minimum 10 cm² aluminum heatsink (1.5 K/W) is required for ambient temperatures up to 50°C. Thermal interface material with <0.5 °C·in²/W resistance is mandatory for reliable operation.