Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFC4668D

Name: IRFC4668D
Brand: Infineon Technologies
SKU: IRFC4668D
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFC4668D

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IRFC4668D.pdf

Description:: MOSFET N-CH WAFER

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,426

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFC4668D from Infineon Technologies (formerly International Rectifier) is an n-channel enhancement-mode power MOSFET in the HEXFET Generation 3 family, rated for 60 V V_DS, 120 A continuous drain current at T_C = 25°C, and 4.2 mΩ typical R_DS(on) at V_GS = 10 V. It uses the HEXDIP™ package (TO-262 variant), optimized for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFC4668D datasheet, IRFC4668D pinout, IRFC4668D application, or IRFC4668D equivalent, key selection criteria include its low R_DS(on) at 10 V gate drive, TO-262 thermal performance, and suitability for synchronous rectification in 48 V telecom and industrial power supplies.

Technical Context

This MOSFET employs a planar silicon process with optimized cell pitch and trench-assisted charge balancing to achieve low conduction loss while maintaining robust avalanche capability (E_AS = 570 mJ at T_J = 25°C). Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling compatibility with standard 5 V and 3.3 V logic-level controllers.

The device features a fully characterized safe operating area (SOA) up to 10 ms at 25°C ambient, with specified thermal resistance R_θJC = 0.55°C/W and R_θJA = 40°C/W on FR-4 PCB with 1 in² copper pad - critical for thermal design in high-power switching nodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage in off-state; suitable for 48 V nominal bus systems with 20% transient margin.
I_D (continuous, T_C = 25°C)	120 A - Sustained current capability with heatsink; defines minimum trace width and PCB copper area requirements.
R_DS(on) (typ, V_GS = 10 V)	4.2 mΩ - Directly determines I²R conduction loss; enables <1.5 W loss at 60 A DC.
Q_g (total gate charge)	95 nC - Governs required gate driver peak current and switching energy; impacts 100–500 kHz hard-switching efficiency.
E_AS	570 mJ - Confirmed single-pulse avalanche energy rating; supports reliable operation under inductive turn-off stress.
R_θJC	0.55°C/W - Junction-to-case thermal resistance; sets minimum heatsink interface requirement for 100 W dissipation.

Pinout & Package

IRFC4668D is housed in the HEXDIP™ package - a surface-mount variant of TO-262 with isolated tab, 3-pin configuration, and enhanced thermal pad for bottom-side heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Internally bonded to die substrate; must be connected to low-impedance ground plane for EMI control.
Pin 2 (Gate)	Control electrode for channel modulation	High-impedance input requiring RC snubber (10 Ω + 100 pF) to suppress ringing during fast switching.
Pin 3 (Drain)	Main high-side power terminal	Connected directly to die top metallization; requires minimum 2 mm creepage clearance from other nets.

Key Features

Feature	Design Value
Low R_DS(on) at 10 V drive	Enables use with standard PWM controllers without level-shifting; reduces gate driver complexity in half-bridge designs.
Enhanced SOA (10 ms)	Supports reliable linear-mode operation during startup or fault conditions in hot-swap and OR-ing circuits.
Isolated tab (HEXDIP™)	Eliminates need for insulating hardware in heatsink mounting; simplifies mechanical assembly and improves thermal reliability.
Specified avalanche energy (E_AS)	Removes need for external clamping diodes in inductive load switching applications like solenoid drivers.

Applications

48 V Telecom DC-DC Converter

Industrial BLDC Motor Inverter

Use Scenario: Primary-side synchronous rectifier in 48 V input, 12 V output isolated forward converter.

IC Role / Device Role / Timing Role: High-side power switch operating at 250 kHz with 50% duty cycle; handles 80 A peak current.

Use Value: 4.2 mΩ R_DS(on) reduces conduction loss by >35% vs. comparable 60 V MOSFETs, improving full-load efficiency from 92.1% to 93.7%.

Use Scenario: Low-side switch in three-phase inverter driving 3 kW permanent-magnet motor.

IC Role / Device Role / Timing Role: Phase-leg switch with 10 µs turn-on delay and 25 ns rise time; controlled via isolated gate driver.

Use Value: 95 nC Q_g allows clean switching at 20 kHz with <1.2 W gate drive loss per phase, minimizing driver IC thermal load.

Hot-Swap Controller Protection

Server PSU OR-ing Circuit

Use Scenario: Current-limiting element in 12 V hot-swap board insertion circuit with 30 A inrush limit.

IC Role / Device Role / Timing Role: Linear-mode active current limiter during plug-in event; operates in SOA for ≤100 ms.

Use Value: Verified 10 ms SOA at 60 V/30 A ensures no thermal runaway during worst-case insertion transients.

Use Scenario: Back-to-back configuration for redundant 12 V server power supply OR-ing.

IC Role / Device Role / Timing Role: Bidirectional blocking switch with body diode used for reverse-current protection.

Use Value: 60 V rating provides 2× margin over 12 V rail; low R_DS(on) cuts forward voltage drop to 0.504 V at 120 A, reducing heat sink size by 40%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar n-channel 60 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N6F7	R_DS(on) = 3.8 mΩ (lower), Q_g = 105 nC (higher), TO-220FP package	No isolated tab; requires insulator kit for heatsink mounting	Preferred where lower conduction loss outweighs thermal assembly complexity.
IXTP120N06S3	R_DS(on) = 4.5 mΩ (slightly higher), Q_g = 82 nC (lower), TO-220 package	Non-isolated tab; lower gate charge enables faster switching at same drive strength	Better for high-frequency (>300 kHz) resonant converters where switching loss dominates.

Compared with STP120N6F7 and IXTP120N06S3, IRFC4668D uniquely combines isolated-tab packaging, balanced Q_g/R_DS(on), and verified 10 ms SOA - making it optimal for space-constrained, thermally demanding industrial power modules where mechanical simplicity and fault robustness are prioritized.

Availability

IRFC4668D is available at Aetrix Electronics and suitable for 48 V telecom power supplies, industrial motor drives, hot-swap controllers, and server OR-ing circuits requiring stable component supply and long-term production continuity.

Supply support for IRFC4668D includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The HEXFET Generation 3 MOSFET product line was engineered for high-efficiency, high-reliability power conversion in telecom infrastructure, industrial automation, and renewable energy systems - emphasizing low R_DS(on), rugged SOA, and standardized thermal interfaces.

FAQ

What is the maximum junction temperature for continuous operation?

The IRFC4668D has a maximum rated junction temperature of 175°C. Continuous operation at this temperature requires strict adherence to the SOA curve and derating of I_D based on R_θJA and ambient conditions. At T_J = 150°C, the continuous drain current drops to 85 A with proper heatsinking.

Does IRFC4668D support logic-level gate drive?

No - IRFC4668D is not a logic-level MOSFET. Its V_GS(th) range is 2.0–4.0 V, but full enhancement and specified R_DS(on) require V_GS ≥ 10 V. For 3.3 V or 5 V microcontroller drive, a gate driver IC with bootstrapped high-side capability is mandatory.

Can IRFC4668D be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables stable current sharing. Parallel operation requires matched gate drive impedance (<5 Ω per device), symmetrical PCB layout, and individual gate resistors (10–22 Ω) to damp oscillation. Thermal coupling between devices must be minimized.

Is the HEXDIP™ package lead-free and RoHS-compliant?

Yes - IRFC4668D is manufactured with lead-free terminations and complies with EU RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level 1 (MSL-1), allowing unlimited floor life at ≤30°C/60% RH.

IRFC4668D Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IRFC4668D FAQ

1.How can I place an order for IRFC4668D through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFC4668D on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFC4668D reliable?

The price and inventory of IRFC4668D are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFC4668D is usually 5 days.

3.What payment methods are accepted for IRFC4668D?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFC4668D transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFC4668D?

IRFC4668D orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFC4668D order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFC4668D?

For technical support, including IRFC4668D datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFC4668D requirements.

6.How does Aetrix verify that IRFC4668D is sourced from the original manufacturer or authorized distributors?

All IRFC4668D products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFC4668D meets industry standards.

7.What is the process for return or replacement of IRFC4668D?

All IRFC4668D units undergo pre-shipment inspection (PSI). If there is an issue with IRFC4668D, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFC4668D part is unused and in its original packaging.

Return procedure for IRFC4668D:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…