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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH3702TR2PBF

Name: IRFH3702TR2PBF
Brand: Infineon Technologies
SKU: IRFH3702TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH3702TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH3702TR2PBF.pdf

Description:: MOSFET N-CH 30V 16A 8PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:7,136

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Product details

Overview

IRFH3702TR2PBF from Infineon Technologies is a 30V N-channel Trench MOSFET in a 3mm × 3mm PQFN package, featuring 7.1 mΩ R_DS(on) at V_GS = 10V, 9.6 nC total gate charge, and 12 A continuous drain current at T_A = 25°C. It serves as a high-efficiency synchronous rectifier or main switch in low-voltage DC-DC converters for CPU power delivery.

For engineers reviewing the IRFH3702TR2PBF datasheet, IRFH3702TR2PBF pinout, IRFH3702TR2PBF application, or IRFH3702TR2PBF equivalent, key selection criteria include R_DS(on) at 4.5V/10V, Q_g, thermal resistance (R_θJA = 45 °C/W), avalanche energy rating (E_AS = 77 mJ), and PQFN package compatibility with high-density PCB layouts.

Technical Context

This HEXFET device uses trench-gate silicon technology optimized for low conduction and switching losses in high-frequency buck converters. Its 3mm × 3mm PQFN package delivers low junction-to-PCB thermal resistance (R_θJP not specified but implied by layout) and supports high-current density routing via exposed drain pad.

The MOSFET exhibits a gate threshold voltage of 1.35–2.35 V, forward transconductance of 37 S, and fully characterized unclamped inductive switching performance up to 12 A. Avalanche capability is validated per JEDEC JESD24-1, with E_AS = 77 mJ at T_J = 25°C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	30 V - Maximum blocking voltage compatible with 24 V input rails and transient margin in telecom/server power supplies.
R_DS(on) max	7.1 mΩ @ V_GS = 10 V - Enables <1 W conduction loss at 12 A, critical for high-efficiency 12 V → 1.2 V CPU VRMs.
Q_g	9.6 nC - Low gate drive energy reduces driver IC loading and enables >1 MHz switching in compact converters.
I_D cont @ T_A = 25°C	12 A - Supports mid-power point-of-load stages without forced airflow or heatsinking.
R_θJA	45 °C/W - Junction-to-ambient thermal resistance measured on standard 1-oz FR4 board, enabling thermal budgeting for ambient-limited designs.
E_AS	77 mJ - Single-pulse avalanche energy rating ensures robustness against inductive turn-off transients in synchronous buck topologies.

Pinout & Package

IRFH3702TR2PBF is housed in a 3 mm × 3 mm, 8-lead PQFN package with an exposed drain pad (pin 1–3, 5–7 = source; pin 4 = gate; pin 8 = drain). The package supports bottom-side thermal transfer and high-current source connections via multiple parallel pins.

Pin/Terminal	Circuit Role	Design Meaning
1,2,3,5,6,7	Source	Multiple low-inductance source terminals reduce loop inductance and improve switching stability in high-di/dt applications.
4	Gate	Single gate input with 2.2 Ω internal gate resistance-enables predictable turn-on/turn-off timing without external gate resistor in many cases.
8 + Exposed Pad	Drain	Exposed copper drain pad provides primary thermal path to PCB and supports high pulsed current handling (I_DM = 120 A).

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	8.7 mΩ - Ensures strong enhancement-mode operation with 5 V logic-level gate drivers, supporting legacy controller interfaces.
Ultra-low Q_gd/Q_g ratio	3.1 nC / 9.6 nC = 0.32 - Reduces Miller-induced switching delay and improves hard-switching efficiency in synchronous rectification.
100% RG tested	2.2 Ω ±15% - Guarantees consistent gate drive timing across production lots, critical for paralleling and multi-phase synchronization.
Lead-free & RoHS-compliant	Qualified for 260°C reflow - Compatible with standard Pb-free SMT assembly processes without reliability degradation.

Applications

Server CPU Voltage Regulator

Telecom DC-DC Converter

Use Scenario: Primary high-side switch in multiphase 12 V input → 1.2 V output VRM for Intel Xeon processors.

IC Role / Device Role / Timing Role: Main switching FET operating at 500 kHz–1 MHz with synchronous rectification.

Use Value: 7.1 mΩ R_DS(on) and 9.6 nC Q_g minimize combined conduction and switching losses, enabling >90% efficiency at 100 A load.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V → 12 V DC-DC module for 5G base station power.

IC Role / Device Role / Timing Role: Low-V_DS rectifying MOSFET replacing Schottky diode in forward topology.

Use Value: Body diode V_SD = 1.0 V and Q_rr = 15–23 nC enable fast reverse recovery, reducing cross-conduction loss during dead-time transitions.

Set-Top Box Power Supply

Industrial Motor Control Driver

Use Scenario: High-side switch in non-isolated buck converter powering SoC and memory subsystems in consumer STBs.

IC Role / Device Role / Timing Role: PWM-controlled power switch with integrated thermal protection via R_θJA-based derating.

Use Value: R_θJA = 45 °C/W allows operation up to 70°C ambient without heatsink, reducing BOM cost and footprint.

Use Scenario: Half-bridge high-side FET in 24 V BLDC gate driver module for HVAC fan control.

IC Role / Device Role / Timing Role: Fast-switching N-channel MOSFET driven by bootstrap gate driver with 100 ns minimum dead time.

Use Value: t_d(off) = 11 ns and t_f = 5.8 ns support precise PWM edge control, minimizing shoot-through risk in high-speed commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5004TR2PBF	R_DS(on) = 4.0 mΩ @ 10 V, Q_g = 22 nC, same PQFN-8 package	Higher conduction efficiency but higher switching loss due to 2.3× gate charge	Prefer when conduction loss dominates (e.g., low-frequency, high-current loads); avoid in >1 MHz designs.
SiR872DP-T1-GE3	R_DS(on) = 6.7 mΩ @ 10 V, Q_g = 11.5 nC, 3.3 mm × 3.3 mm PowerPAK® SO-8	Larger footprint, higher R_θJA (50 °C/W), no exposed drain pad	Select only if SO-8 footprint compatibility is required; inferior thermal performance limits power density.

Compared with IRFH5004TR2PBF and SiR872DP-T1-GE3, IRFH3702TR2PBF offers optimal balance of low R_DS(on), moderate Q_g, and superior thermal interface-making it ideal for space-constrained, medium-frequency buck converters where both efficiency and layout density matter.

Availability

IRFH3702TR2PBF is available at Aetrix Electronics and suitable for server CPU voltage regulators, telecom DC-DC converters, and set-top box power supplies requiring stable component supply and long-term industrial availability.

Supply support for IRFH3702TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in computing, communications, and consumer electronics where thermal performance and switching speed are critical.

FAQ

What is the maximum continuous drain current at 70°C ambient temperature?

The IRFH3702TR2PBF supports 10 A continuous drain current at T_A = 70°C with proper PCB copper area (1 in² 2-oz Cu, 1 oz internal layers). This derating reflects its R_θJA = 45 °C/W and T_J(max) = 150°C limit-no external heatsink required under these conditions.

Does this MOSFET have avalanche capability, and is it tested?

Yes-IRFH3702TR2PBF is 100% tested for unclamped inductive switching (UIS) per JEDEC JESD24-1. Its single-pulse avalanche energy is 77 mJ at T_J = 25°C and 25 mJ at T_J = 125°C, verified using standardized test circuits with controlled di/dt and V_(BR)DSS clamping.

Can IRFH3702TR2PBF be used with 5 V gate drive?

Yes-it is fully enhanced at V_GS = 4.5 V, delivering R_DS(on) = 8.7 mΩ (max). At 5 V, typical R_DS(on) is ~6.5 mΩ, enabling use with standard 5 V microcontroller GPIO or dedicated 5 V gate drivers without level shifting.

What is the body diode reverse recovery charge (Q_rr) and why does it matter?

Q_rr is 15–23 nC at T_J = 25°C, measured with di/dt = 225 A/µs and V_DD = 15 V. This parameter directly impacts switching loss and EMI in synchronous rectifiers: lower Q_rr reduces reverse recovery current spikes and associated voltage overshoot during dead-time transitions.

IRFH3702TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 16A (Ta), 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 7.1mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 14 nC @ 4.5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1510 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (3x3)

IRFH3702TR2PBF FAQ

1.How can I place an order for IRFH3702TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH3702TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH3702TR2PBF reliable?

The price and inventory of IRFH3702TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH3702TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH3702TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH3702TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH3702TR2PBF?

IRFH3702TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH3702TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH3702TR2PBF?

For technical support, including IRFH3702TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH3702TR2PBF requirements.

6.How does Aetrix verify that IRFH3702TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH3702TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH3702TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH3702TR2PBF?

All IRFH3702TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH3702TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH3702TR2PBF part is unused and in its original packaging.

Return procedure for IRFH3702TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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