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Infineon Technologies IRFH3702TRPBF
- Part No.:
- IRFH3702TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
IRFH3702TRPBF.pdf
- Description:
- MOSFET N-CH 30V 16A/42A 8PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:3,963
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Product details
Overview
IRFH3702TRPBF from Infineon Technologies is a 30V, 7.1mΩ (at VGS = 10V) N-channel Trench MOSFET in a 3mm × 3mm PQFN package, optimized for high-efficiency synchronous buck converters in CPU power delivery and telecom DC-DC modules. It delivers 12A continuous drain current at TA = 25°C, features 9.6nC total gate charge, and supports 100% avalanche-tested operation up to 77mJ.
For engineers reviewing the IRFH3702TRPBF datasheet, IRFH3702TRPBF pinout, IRFH3702TRPBF application, or IRFH3702TRPBF equivalent, key selection criteria include RDS(on) at 4.5V/10V, Qg/Qgd ratio for switching loss control, junction-to-PCB thermal resistance (6.0°C/W), body diode recovery (Qrr = 15–23nC), and RoHS-compliant lead-free reflow qualification (260°C).
Technical Context
This HEXFET Power MOSFET uses Infineon's Trench-based silicon process to achieve low conduction loss and fast switching. Its gate threshold voltage (1.35–2.35V) enables robust 4.5V logic-level drive, while the 3.1nC gate-to-drain charge (Qgd) and 4.3nC switch charge (Qsw) support high-frequency operation up to 1MHz in synchronous rectification topologies.
The device integrates a fully characterized intrinsic body diode with 17–26ns reverse recovery time and 15–23nC Qrr, enabling reliable unclamped inductive switching. Thermal design is aided by a low 6.0°C/W junction-to-case resistance and 44°C/W junction-to-ambient (t < 10s), verified under pulsed conditions per JEDEC JESD51-14.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V maximum drain-source voltage - defines safe operating range in 12V/24V input buck stages |
| RDS(on) max | 7.1mΩ at VGS = 10V, TJ = 25°C - enables <1W conduction loss at 12A continuous load |
| Qg | 9.6nC typical - determines gate driver power requirement and turn-on energy loss |
| Qgd | 3.1nC typical - directly impacts Miller-induced switching delay and EMI during hard-switching |
| RθJC | 6.0°C/W - allows direct thermal path to PCB copper pour for high-power density layouts |
| EAS | 77mJ single-pulse avalanche energy - supports robustness against inductive transients in non-clamped circuits |
| ID @ TA = 25°C | 12A continuous - specifies usable current in standard FR4 PCB with 1oz copper and minimal heatsinking |
Pinout & Package
IRFH3702TRPBF is housed in a 3mm × 3mm, 8-pin PQFN (Power Quad Flat No-lead) package with exposed drain pad for thermal and electrical connection. The package complies with IPC-7351B footprint standards and supports automated optical inspection (AOI) due to coplanar terminations.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 6, 7, 8 | Drain (D) | Internally connected to exposed thermal pad - must be soldered to large PCB copper area for thermal management |
| 5 | Gate (G) | High-impedance control terminal - requires low-inductance gate loop and 1.8Ω series resistor for optimal switching |
| Source (S) | Source (S) | Internal connection to pins 1–4 and 6–8 via substrate - forms return path for load current and gate drive reference |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) at 4.5V | 8.7mΩ - ensures full enhancement with 5V microcontroller GPIO or PWM controller outputs |
| Ultra-low Qgd/Qg ratio | 32% - reduces Miller plateau duration and improves controllability in high-dV/dt environments |
| 100% avalanche tested | 77mJ EAS - guarantees ruggedness in synchronous rectifier failure modes without external snubbers |
| Lead-free & halogen-free | Qualified to 260°C reflow - eliminates Pb contamination risk and meets IEC 61249-2-21 compliance |
| Low RθJA (t < 10s) | 44°C/W - enables short-term peak power handling in burst-mode or transient load applications |
Applications
| Server VRM Power Stage | Telecom Isolated DC-DC |
|---|---|
Use Scenario: High-current, high-frequency (500kHz–1MHz) synchronous buck converter supplying core voltage to multi-core Xeon processors. IC Role / Device Role / Timing Role: High-side switching element with fast turn-on/turn-off (td(on) = 9.6ns, tf = 5.8ns) and low Qgd to minimize shoot-through risk. Use Value: 7.1mΩ RDS(on) reduces conduction loss by >30% vs. legacy SO-8 MOSFETs, improving VRM efficiency from 90% to 93% at 100A load. | Use Scenario: Primary-side switch in isolated forward or active-clamp forward converters for 48V telecom systems. IC Role / Device Role / Timing Role: Main power switch handling 12A peak primary current with 30V VDS rating matching clamp voltage margin. Use Value: 44°C/W RθJA (t < 10s) sustains 200W peak power bursts during line transients without derating. |
| Set-Top Box DC-DC Converter | Industrial PLC I/O Module |
Use Scenario: Secondary-side synchronous rectifier in 12V-to-3.3V/5V buck converters powering SoC and memory subsystems. IC Role / Device Role / Timing Role: Low-voltage, logic-level N-channel MOSFET driven directly by PWM controller's gate output (4.5V). Use Value: 8.7mΩ RDS(on) at VGS = 4.5V cuts rectifier loss by 45% versus Schottky diodes, eliminating thermal runaway concerns. | Use Scenario: Load switch for 24V field power distribution in programmable logic controller backplanes. IC Role / Device Role / Timing Role: Protected high-side switch with integrated body diode for reverse polarity and inductive kickback suppression. Use Value: Fully characterized 15–23nC Qrr and 17–26ns trr ensure predictable flyback energy dissipation during solenoid de-energization. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SiR872DP-T1-GE3 | RDS(on) = 6.2mΩ @ 10V, Qg = 12.5nC, PQFN 3×3 | Higher gate charge increases driver loss; better RDS(on) suits lower-frequency, higher-current designs | Prefer when conduction loss dominates and switching frequency ≤300kHz |
| DMN3025LSD-13 | RDS(on) = 2.5mΩ @ 10V, Qg = 14.5nC, SO-8 | Larger SO-8 package raises RθJA to 62°C/W; higher capacitance limits MHz-range use | Choose only if board space allows SO-8 and thermal budget permits higher junction rise |
Compared with SiR872DP-T1-GE3 and DMN3025LSD-13, IRFH3702TRPBF offers the best balance of low Qg/Qgd, tight RDS(on) tolerance, and PQFN thermal performance-making it optimal for compact, high-frequency synchronous buck stages where gate drive loss and thermal density are critical.
Availability
IRFH3702TRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and set-top box power supplies requiring stable component supply, long-lifecycle support, and RoHS-compliant manufacturing.
Supply support for IRFH3702TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global R&D and wafer fabrication facilities.
The IRFH3702TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in computing and communications infrastructure where low RDS(on), fast switching, and avalanche ruggedness are mandatory.
FAQ
What is the maximum continuous drain current at 70°C ambient temperature?
The IRFH3702TRPBF supports 10A continuous drain current at TA = 70°C with standard PCB mounting (1oz copper, 1in² pad). This rating assumes no forced airflow and accounts for RDS(on) increase with junction temperature, as confirmed in Figure 9 of the official datasheet.
Does this MOSFET require a gate resistor, and what value is recommended?
Yes-a 1.8Ω gate resistor is specified in the datasheet (Figure 15b test condition) to dampen ringing and control dV/dt during switching. This value balances EMI suppression and switching speed; values below 1Ω increase overshoot risk, while above 3Ω unnecessarily extends turn-on time.
Can IRFH3702TRPBF be used in 5V gate drive applications?
Yes-it is fully characterized down to VGS = 4.5V, delivering 8.7mΩ RDS(on) and 12A ID capability. Its 1.35–2.35V gate threshold ensures strong enhancement with 5V logic, unlike older MOSFETs requiring 10V for full conduction.
Is the body diode suitable for synchronous rectification without external diode parallel?
Yes-the intrinsic body diode is fully specified with 15–23nC Qrr and 17–26ns trr, enabling reliable synchronous rectification in buck converters up to 1MHz. However, its forward voltage (1.0V typ.) is higher than Schottky alternatives, so efficiency gain depends on duty cycle and load current.
IRFH3702TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Ta), 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 7.1mOhm @ 16A, 10V
- Vgs(th) (Max) @ Id:
- 2.35V @ 25µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1510 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 2.8W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PQFN (3x3)
IRFH3702TRPBF FAQ
1.How can I place an order for IRFH3702TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH3702TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH3702TRPBF reliable?
The price and inventory of IRFH3702TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH3702TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH3702TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH3702TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH3702TRPBF?
IRFH3702TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH3702TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH3702TRPBF?
For technical support, including IRFH3702TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH3702TRPBF requirements.
6.How does Aetrix verify that IRFH3702TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH3702TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH3702TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH3702TRPBF?
All IRFH3702TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH3702TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH3702TRPBF part is unused and in its original packaging.
Return procedure for IRFH3702TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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