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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH4234TRPBF

Name: IRFH4234TRPBF
Brand: Infineon Technologies
SKU: IRFH4234TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH4234TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH4234TRPBF.pdf

Description:: MOSFET N-CH 25V 22A PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFH4234TRPBF from Infineon Technologies is a 25 V, 60 A N-channel enhancement-mode Power MOSFET in PQFN 5×6 mm package, featuring 4.6 mΩ R_DS(on) at V_GS = 10 V, 8.2 nC typical Q_g, and 4.6 °C/W junction-to-case thermal resistance. It serves as a high-efficiency synchronous rectifier or control switch in DC-DC converters.

For engineers reviewing the IRFH4234TRPBF datasheet, IRFH4234TRPBF pinout, IRFH4234TRPBF application, or IRFH4234TRPBF equivalent, key selection criteria include low conduction loss (R_DS(on) ≤ 4.6 mΩ), fast switching capability (Q_g = 8.2 nC), thermal performance (R_θJC = 4.6 °C/W), and compatibility with standard surface-mount assembly processes.

Technical Context

This MOSFET employs trench-gate FastIRFET™ technology optimized for high-frequency synchronous buck and isolated DC-DC topologies. Its low gate charge (8.2 nC typ.) and low output capacitance (C_oss = 286 pF) reduce switching losses, while the PQFN 5×6 mm bottom-thermal pad enables direct PCB heat transfer.

The device supports gate drive voltages from 3.25 V to 10 V, with V_GS(th) = 1.6 V (typ.) and tight threshold spread (1.1–2.1 V). Body diode characteristics include t_rr = 10 ns (typ.) and Q_rr = 11 nC (typ.), enabling efficient reverse recovery in synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	25 V - Maximum drain-source blocking voltage for 12 V input rail applications
R_DS(on) @ V_GS = 10 V	4.6 mΩ - Enables ≤ 8.3 W conduction loss at 60 A continuous current
R_DS(on) @ V_GS = 4.5 V	7.3 mΩ - Ensures robust turn-on under 5 V logic-level gate drive
Q_g (typ.)	8.2 nC - Reduces gate driver power demand and switching transition time
R_θJC (Bottom)	4.6 °C/W - Allows >5 W continuous power dissipation with 23 °C temperature rise over PCB
I_D @ T_C = 25°C	60 A - Rated continuous drain current with heatsinking via bottom thermal pad
V_GS(th)	1.6 V (typ.) - Ensures reliable turn-on with low-voltage controllers and avoids shoot-through risk

Pinout & Package

PQFN 5×6 mm package with exposed thermal pad on bottom side and industry-standard 8-pin layout (G-S-S-D-D-D-D-G). Pin 1 marked by dot; leads are lead-free and RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1 & 8)	Gate	Low-impedance input for PWM control; dual pins reduce gate loop inductance
S (Pins 2–3)	Source	Common return path for power and signal; dual pins minimize source inductance in high-di/dt operation
D (Pins 4–7)	Drain	Main high-current output node; four parallel pins support 60 A continuous conduction

Key Features

Feature	Design Value
Low Q_g (8.2 nC)	Reduces gate driver power consumption and enables >1 MHz switching without excessive loss
Low R_DS(on) (4.6 mΩ)	Lowers I²R conduction loss in high-current paths, improving efficiency in 12 V/48 V intermediate bus converters
Low R_θJC (4.6 °C/W)	Enables direct thermal coupling to PCB copper, eliminating need for external heatsinks in space-constrained designs
MSL1 rating	Supports standard reflow profiles without moisture sensitivity concerns, reducing manufacturing yield risk
RoHS & halogen-free	Meets IPC-J-STD-609A Class 1 requirements for environmentally compliant industrial and telecom equipment

Applications

Server VRM Synchronous Rectifier

Telecom DC-DC Secondary Side

Use Scenario: High-density 48 V to 12 V intermediate bus converter in cloud server power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode in secondary-side LLC resonant converter.

Use Value: Achieves >97% efficiency at 60 A load by eliminating 0.4 V forward drop and reducing conduction loss by 65% vs. diode solution.

Use Scenario: Isolated 48 V to 3.3 V/5 V point-of-load regulator in 5G base station RF power modules.

IC Role / Device Role / Timing Role: Low-loss control MOSFET in active clamp forward topology with 500 kHz switching frequency.

Use Value: Enables compact design via 0.9 mm profile and reduces thermal margin requirement with 4.6 °C/W R_θJC.

Industrial Motor Drive Half-Bridge

Automotive ADAS Power Supply

Use Scenario: 24 V motor control H-bridge in factory automation actuators requiring <10 ms response.

IC Role / Device Role / Timing Role: High-side switch in half-bridge configuration driving brushed DC motors up to 500 W.

Use Value: Supports fast PWM (≤2 µs dead-time) due to low Q_gd (3.1 nC) and tight V_GS(th) tolerance (±0.5 V).

Use Scenario: 12 V input to 5 V/3.3 V power supply for automotive camera ECU with ASIL-B compliance.

IC Role / Device Role / Timing Role: Primary-side switch in flyback converter operating across -40°C to +125°C ambient.

Use Value: Maintains stable R_DS(on) (1.8× increase from 25°C to 125°C) and supports 150°C max junction temperature per AEC-Q101 stress testing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NTMFS4C06NT1G	R_DS(on) = 4.8 mΩ @ 10 V; Q_g = 9.5 nC; same PQFN 5×6 mm footprint	Higher gate charge increases driver loss in >1 MHz designs; identical thermal resistance	Select when prioritizing second-source availability over minimal Q_g
Vishay SiR872DP-T1-GE3	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 10.5 nC; 5×6 mm PQFN but different pinout (G-S-D-D-D-D-S-G)	Lower R_DS(on) improves conduction loss, but non-identical pinout requires PCB redesign	Select only if board revision allows layout change and conduction loss dominates system efficiency

Compared with NTMFS4C06NT1G and SiR872DP-T1-GE3, IRFH4234TRPBF offers the lowest Q_g/R_DS(on) ratio (1.78 nC/mΩ), making it optimal for high-frequency, thermally constrained synchronous rectifiers where gate drive loss and thermal management are critical.

Availability

IRFH4234TRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC converters, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IRFH4234TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's FastIRFET™ HEXFET® family, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter, telecom, and industrial power systems where low Q_g and low R_DS(on) are essential.

FAQ

What is the maximum continuous drain current for IRFH4234TRPBF at 100°C case temperature?

The maximum continuous drain current is 38 A at T_C = 100°C and V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN 5×6 mm package and ensures safe operation within its 150°C maximum junction temperature rating.

Does IRFH4234TRPBF support 5 V gate drive in logic-level applications?

Yes - with R_DS(on) = 7.3 mΩ at V_GS = 4.5 V and V_GS(th) = 1.6 V (typ.), it fully turns on using standard 5 V microcontroller or gate driver outputs. The low threshold ensures robust operation even with ±0.5 V supply variation.

How does the PQFN 5×6 mm package improve thermal performance compared to SO-8?

The PQFN 5×6 mm package uses a bottom-exposed thermal pad that achieves R_θJC = 4.6 °C/W, versus ~60 °C/W for SO-8. This allows >5× higher power dissipation into the PCB, eliminating external heatsinks and supporting higher power density in compact converters.

Is IRFH4234TRPBF qualified for automotive applications?

No - it is industrial-qualified (MSL1, TJ = −55°C to +150°C) but not AEC-Q101 certified. For automotive use, Infineon recommends the pin-compatible AUIRFH4234TR1PbF variant, which includes additional stress testing and traceability for ASIL-B systems.

IRFH4234TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerTDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.6mOhm @ 30A

Vgs(th) (Max) @ Id:: 2.1V @ 25µA

Gate Charge (Qg) (Max) @ Vgs:: 17 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1011 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: 3.5W (Ta), 27W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6)

IRFH4234TRPBF FAQ

1.How can I place an order for IRFH4234TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH4234TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH4234TRPBF reliable?

The price and inventory of IRFH4234TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH4234TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH4234TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH4234TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH4234TRPBF?

IRFH4234TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH4234TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH4234TRPBF?

For technical support, including IRFH4234TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH4234TRPBF requirements.

6.How does Aetrix verify that IRFH4234TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH4234TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH4234TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH4234TRPBF?

All IRFH4234TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH4234TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH4234TRPBF part is unused and in its original packaging.

Return procedure for IRFH4234TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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