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Infineon Technologies IRFH5004TR2PBF
- Part No.:
- IRFH5004TR2PBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
IRFH5004TR2PBF.pdf
- Description:
- MOSFET N-CH 40V 28A 8VQFN
- Quantity:
- Payment:
- Shipping:
Inventory:9,454
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Product details
Overview
IRFH5004TR2PBF from Infineon Technologies is a 40 V, 188 A (mounting base), 2.6 mΩ RDS(on) N-channel Trench MOSFET in PQFN 5×6 mm package, optimized for high-current synchronous rectification and DC-DC brick applications with low thermal resistance (0.8 °C/W) and 73 nC total gate charge.
For engineers reviewing the IRFH5004TR2PBF datasheet, IRFH5004TR2PBF pinout, IRFH5004TR2PBF application, or IRFH5004TR2PBF equivalent, key selection criteria include continuous drain current at mounting base (188 A), ultra-low RDS(on), gate charge profile for hard-switched topologies, and MSL1 industrial qualification for high-reliability power conversion designs.
Technical Context
This MOSFET employs Infineon's Trench-based StrongIRFET™ process to achieve sub-3 mΩ on-resistance at 10 V gate drive while maintaining robust avalanche capability (340 mJ EAS) and fast switching (tr = 39 ns, tf = 16 ns). Its PQFN 5×6 mm bottom-cooled package enables direct thermal coupling to PCB copper, supporting >150 W power dissipation at Tmb = 25°C.
The device features tightly controlled gate threshold voltage (2.0–4.0 V), low reverse transfer capacitance (Crss = 460 pF), and 100% RG testing for consistent switching behavior. Body diode parameters-VSD ≤ 1.0 V at 50 A and Qrr = 100–150 nC-are specified for synchronous rectifier recovery performance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - Maximum blocking voltage for secondary-side rectification in 12–24 V input DC-DC converters |
| RDS(on) max | 2.6 mΩ @ VGS = 10 V - Enables <1.5 W conduction loss at 188 A, critical for high-efficiency bricks |
| Qg typical | 73 nC - Determines gate driver power requirement and switching loss in 100–500 kHz topologies |
| ID @ Tmb = 25°C | 188 A - Continuous current rating referenced to mounting base temperature, not ambient |
| RθJC (bottom) | <0.8 °C/W - Thermal path from junction to PCB heatsink, enabling high-power density without external heatsink |
| VGS(th) | 2.0–4.0 V - Ensures reliable turn-on with standard 5 V or 10 V gate drivers, minimizing shoot-through risk |
| Ciss | 4490 pF - Input capacitance affecting gate drive loop stability and Miller effect in hard-switched converters |
Pinout & Package
PQFN 5×6 mm package with exposed thermal pad (bottom side), 3-pin configuration (Drain, Source, Gate), and industry-standard pinout compatible with multi-vendor layout footprints. Mounting base thermal interface requires solder paste stencil design per AN-1136.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current-carrying terminal connected to high-side node | Exposed copper pad on bottom surface - primary thermal path to PCB; electrically tied to drain metallization |
| Source (S) | Reference node for gate drive and current return path | Internal connection to source bond wires and top-side S pad - defines local ground reference for gate driver |
| Gate (G) | Control terminal modulating channel conductivity | Small-area top-side pad - requires low-inductance routing to minimize ringing during 39 ns rise time |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) ≤ 2.6 mΩ | Reduces conduction losses by >30% vs. comparable 40 V MOSFETs, directly improving efficiency in 12 V output bricks |
| RθJC (bottom) < 0.8 °C/W | Enables 156 W power dissipation at Tmb = 25°C without heatsink - supports compact, fanless DC-DC modules |
| 100% RG tested | Guarantees gate resistance within 1.2 ±0.3 Ω, ensuring predictable switching timing across production lots |
| MSL1 industrial qualification | Permits reflow soldering without moisture sensitivity concerns - eliminates bake-out step in high-volume manufacturing |
| Low-profile ≤ 0.9 mm height | Allows integration into space-constrained telecom and server power supplies where Z-height is limited to 1.0 mm |
Applications
| Secondary Side Synchronous Rectification | Inverter for DC Motors |
|---|---|
Use Scenario: High-efficiency 12 V/24 V output stage in isolated DC-DC bricks for telecom and datacom systems. IC Role / Device Role / Timing Role: Power MOSFET replacing Schottky diode in synchronous rectifier topology, driven by transformer-coupled or controller-generated gate signal. Use Value: Achieves >96% efficiency at full load by eliminating 0.4–0.6 V forward drop, reducing heat generation by 40 W vs. diode solution. | Use Scenario: Half-bridge leg in 24–48 V brushed DC motor drives for industrial automation and robotics. IC Role / Device Role / Timing Role: Low-side switch controlling motor winding current direction and braking via PWM at 20–50 kHz. Use Value: Supports 188 A peak current pulses (IDM = 752 A) for torque surge handling, with body diode Qrr = 100 nC limiting commutation losses. |
| DC-DC Brick Application | Boost Converters |
Use Scenario: Primary-side high-current switch in non-isolated 48 V input, 12 V output DC-DC bricks for AI accelerators and edge servers. IC Role / Device Role / Timing Role: Main switching FET operating at 300–400 kHz with 73 nC Qg and 39 ns tr. Use Value: Delivers 156 W continuous power at Tmb = 25°C using only PCB copper as heatsink, eliminating discrete heatsinks. | Use Scenario: High-side switch in automotive 12 V → 48 V boost converters for mild-hybrid systems. IC Role / Device Role / Timing Role: N-channel MOSFET in boost topology requiring low RDS(on) and fast turn-off (tf = 16 ns) to minimize dead-time losses. Use Value: Enables 95% peak efficiency at 5 kW output with junction temperature maintained below 130°C under forced air cooling. |
Availability
IRFH5004TR2PBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick applications, and high-current motor inverters requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFH5004TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.
This part belongs to the StrongIRFET™ family of high-current Trench MOSFETs, designed specifically for high-efficiency, high-power-density DC-DC conversion and motor control applications demanding low RDS(on) and robust thermal performance.
FAQ
What is the maximum continuous drain current rating for IRFH5004TR2PBF?
The maximum continuous drain current is 188 A when referenced to mounting base temperature (Tmb = 25°C), not ambient temperature. At Tmb = 100°C, it derates to 119 A. This rating assumes optimal PCB copper area for thermal conduction and is distinct from the 28 A rating at TA = 25°C.
Does IRFH5004TR2PBF have integrated ESD protection?
No, IRFH5004TR2PBF does not include integrated ESD protection circuitry. It complies with HBM ESD classification per JESD22-A114 (≥2 kV), but external gate protection (e.g., 10 Ω series resistor + 12 V TVS) is recommended in systems with high-noise gate drive environments.
Can IRFH5004TR2PBF be used in parallel configurations?
Yes, its positive temperature coefficient of RDS(on) (0.04 %/°C) enables stable current sharing in parallel operation. Layout must ensure matched gate drive loop inductance and symmetrical thermal paths; gate resistors ≥1.5 Ω are recommended to dampen oscillation between paralleled devices.
What is the recommended PCB footprint for IRFH5004TR2PBF?
The official PQFN 5×6 mm "Outline B" footprint is defined in Infineon application note AN-1136. It specifies a 4.8×5.8 mm thermal pad with 0.3 mm solder mask opening, 0.4 mm via-in-pad pattern (8×8 array), and 0.25 mm stencil aperture for 5–7 µm solder paste thickness to ensure void-free thermal interface.
IRFH5004TR2PBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- -
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Cut Tape (CT)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- 2.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- 4490 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PQFN (5x6)
IRFH5004TR2PBF FAQ
1.How can I place an order for IRFH5004TR2PBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH5004TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH5004TR2PBF reliable?
The price and inventory of IRFH5004TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5004TR2PBF is usually 5 days.
3.What payment methods are accepted for IRFH5004TR2PBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5004TR2PBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH5004TR2PBF?
IRFH5004TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH5004TR2PBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH5004TR2PBF?
For technical support, including IRFH5004TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5004TR2PBF requirements.
6.How does Aetrix verify that IRFH5004TR2PBF is sourced from the original manufacturer or authorized distributors?
All IRFH5004TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5004TR2PBF meets industry standards.
7.What is the process for return or replacement of IRFH5004TR2PBF?
All IRFH5004TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5004TR2PBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH5004TR2PBF part is unused and in its original packaging.
Return procedure for IRFH5004TR2PBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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