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Infineon Technologies IRFH5004TRPBF
- Part No.:
- IRFH5004TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
IRFH5004TRPBF.pdf
- Description:
- MOSFET N-CH 40V 28A/100A 8PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,225
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Product details
Overview
IRFH5004TRPBF from Infineon Technologies is a 40 V, 188 A (mounting base), 2.6 mΩ RDS(on) N-channel Trench MOSFET in PQFN 5 mm × 6 mm package, optimized for high-current synchronous rectification and DC-DC brick applications with low thermal resistance (0.8 °C/W junction-to-mounting base).
For engineers reviewing the IRFH5004TRPBF datasheet, IRFH5004TRPBF pinout, IRFH5004TRPBF application, or IRFH5004TRPBF equivalent, key selection criteria include pulsed drain current (752 A), total gate charge (73 nC), gate resistance (1.2 Ω), diode reverse recovery charge (100–150 nC), and MSL1 industrial qualification.
Technical Context
This device uses Infineon's Trench Power MOSFET process to achieve ultra-low on-resistance and fast switching with controlled Qgd/Qgs ratio (27 nC / 21.1 nC), enabling efficient operation in hard-switched and synchronous rectifier topologies at up to 150 °C junction temperature.
Its body diode exhibits 32–48 ns reverse recovery time and 100–150 nC Qrr under 50 A/300 A/µs conditions, supporting high-frequency DC-DC conversion where diode conduction and recovery losses dominate efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 40 V - maximum blocking voltage for secondary-side rectification in 12–24 V output DC-DC bricks |
| RDS(on) max | 2.6 mΩ @ VGS = 10 V - enables <1.3 W conduction loss at 200 A continuous mounting-base current |
| Qg typical | 73 nC - determines gate drive power and switching speed in 100–500 kHz converters |
| ID @ Tmb = 25°C | 188 A - continuous current rating referenced to PCB mounting base, not ambient |
| RθJC (bottom) | <0.8 °C/W - enables direct thermal coupling to copper pour, critical for >100 W/in² power density |
| Qrr | 100–150 nC - quantifies body diode recovery loss during synchronous FET turn-on in buck/LLC topologies |
| VSD | <1.0 V @ IS = 50 A - forward voltage of integrated body diode used in freewheeling paths |
Pinout & Package
PQFN 5 mm × 6 mm (Outline "B") package with exposed thermal pad on bottom surface; 3-pin configuration (Drain, Source, Gate) arranged in standard industry pinout for multi-vendor compatibility and automated placement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current-carrying terminal connected to high-side node | Exposed copper pad on bottom - primary thermal path to PCB; electrically tied to all top-side drain pads |
| Source (S) | Reference node for gate drive and current return path | Internally bonded to source metal; serves as common reference for gate threshold and body diode cathode |
| Gate (G) | Control terminal modulating channel conductivity | Isolated input requiring 10 V for full enhancement; 1.2 Ω internal gate resistance limits dV/dt-induced ringing |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 2.6 mΩ max enables <1.3 W conduction loss at 200 A, reducing heatsink requirements in 1 kW+ bricks |
| Low RθJC (bottom) | 0.8 °C/W allows direct thermal transfer to PCB copper, supporting >150 W dissipation without external heatsink |
| 100% RG tested | Guarantees gate resistance ≤1.2 Ω, ensuring consistent turn-on timing and reduced gate driver stress |
| MSL1 industrial qualification | Enables single-reflow assembly without moisture sensitivity concerns in high-reliability industrial power supplies |
| Industry-standard pinout | Ensures drop-in replacement capability across multiple vendors' 5×6 PQFN MOSFETs in existing layouts |
Applications
| Secondary Side Synchronous Rectification | Inverter for DC Motors |
|---|---|
Use Scenario: High-efficiency 12–24 V output stage in isolated DC-DC bricks for telecom and server PSUs. IC Role / Device Role / Timing Role: N-channel power MOSFET replacing Schottky diodes to reduce conduction loss during synchronous rectification phase. Use Value: Achieves >98% efficiency at full load by cutting forward voltage drop from ~0.5 V to <0.05 V at 100 A. | Use Scenario: Half-bridge leg in 24–48 V brushed DC motor drives for industrial automation. IC Role / Device Role / Timing Role: Low-RDS(on) switching element handling continuous 150 A peak currents with minimal thermal rise. Use Value: Enables compact motor controller design with 0.8 °C/W thermal resistance, eliminating need for forced-air cooling. |
| DC-DC Brick Application | Boost Converters |
Use Scenario: Primary or secondary switch in 300–600 W quarter-brick DC-DC modules operating at 200–500 kHz. IC Role / Device Role / Timing Role: Main power switch leveraging 73 nC Qg and 27 nC Qgd for fast, low-loss transitions. Use Value: Reduces switching loss by 35% vs. comparable 3.5 mΩ devices due to optimized charge ratio and low Coss (970 pF). | Use Scenario: High-current boost stage in battery-powered industrial equipment (e.g., 24 V input to 48 V output). IC Role / Device Role / Timing Role: Main switch conducting 188 A continuous current from mounting base, sustaining 752 A pulsed loads. Use Value: Supports >3 kW peak power delivery with single-device solution, avoiding paralleling complexity and layout imbalance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH5020TRPBF | Higher VDSS (60 V), higher RDS(on) (3.8 mΩ), same package | Better suited for 48 V bus systems; less efficient at 12–24 V outputs | Select when system requires >40 V blocking margin or operates above 40 V nominal input |
| STL220N4F7AG | Same VDSS (40 V), lower RDS(on) (2.2 mΩ), higher Qg (95 nC), same PQFN 5×6 | Improved conduction loss but slower switching; higher gate drive power required | Select when conduction loss dominates over switching loss, e.g., low-frequency (<100 kHz) high-current applications |
Compared with IRFH5004TRPBF, IRFH5020TRPBF trades conduction efficiency for voltage headroom, while STL220N4F7AG improves RDS(on) at the cost of increased gate charge-making IRFH5004TRPBF optimal for balanced 200–500 kHz DC-DC bricks demanding both low loss and fast switching.
Availability
IRFH5004TRPBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick applications, and high-current boost converters requiring stable component supply and industrial-grade reliability.
Supply support for IRFH5004TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This part belongs to the StrongIRFET™ family, designed specifically for high-current, high-efficiency power conversion in telecom, server, and industrial DC-DC modules where thermal performance and switching consistency are critical.
FAQ
What is the maximum continuous drain current rating for IRFH5004TRPBF?
The maximum continuous drain current is 188 A when referenced to mounting base temperature (Tmb = 25°C) and VGS = 10 V. At ambient temperature (TA = 25°C), it is rated for 28 A due to thermal limitations without direct PCB thermal coupling.
Does IRFH5004TRPBF have an integrated body diode, and what are its key parameters?
Yes, it includes an integral reverse (body) diode with VSD ≤ 1.0 V at 50 A and 25°C, reverse recovery time (trr) of 32–48 ns, and reverse recovery charge (Qrr) of 100–150 nC under specified test conditions (IF = 50 A, di/dt = 300 A/µs).
What is the gate threshold voltage range, and how does it vary with temperature?
VGS(th) ranges from 2.0 V to 4.0 V at 25°C, with a temperature coefficient of −5.6 mV/°C. This negative coefficient ensures gate turn-off becomes more robust at elevated temperatures, improving safety in thermal runaway scenarios.
Is IRFH5004TRPBF compatible with lead-free reflow soldering processes?
Yes, it is RoHS-compliant and halogen-free, qualified to MSL1 per JEDEC J-STD-020, and supports standard Pb-free reflow profiles including peak temperatures up to 260°C without moisture-related defects or reliability degradation.
IRFH5004TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 28A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 4490 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 156W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PQFN (5x6)
IRFH5004TRPBF FAQ
1.How can I place an order for IRFH5004TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH5004TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH5004TRPBF reliable?
The price and inventory of IRFH5004TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5004TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH5004TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5004TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH5004TRPBF?
IRFH5004TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH5004TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH5004TRPBF?
For technical support, including IRFH5004TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5004TRPBF requirements.
6.How does Aetrix verify that IRFH5004TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH5004TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5004TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH5004TRPBF?
All IRFH5004TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5004TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH5004TRPBF part is unused and in its original packaging.
Return procedure for IRFH5004TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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