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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5006TR2PBF

Name: IRFH5006TR2PBF
Brand: Infineon Technologies
SKU: IRFH5006TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5006TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerTDFN

Datasheet:: IRFH5006TR2PBF.pdf

Description:: MOSFET N-CH 60V 100A 5X6 PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFH5006TR2PBF from Infineon Technologies is a 60 V, 100 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, featuring 4.1 mΩ max R_DS(on) at V_GS = 10 V, 69 nC typical Q_g, and 0.8 °C/W max thermal resistance to PCB. It serves as a high-current synchronous rectifier or primary/secondary-side switch in high-efficiency DC-DC bricks and boost converters.

For engineers reviewing the IRFH5006TR2PBF datasheet, IRFH5006TR2PBF pinout, IRFH5006TR2PBF application, or IRFH5006TR2PBF equivalent, key selection criteria include low conduction loss (≤4.1 mΩ), fast switching (t_d(off) = 30 ns), robust avalanche rating (1000 mJ), industry-standard PQFN 5×6 pinout compatibility, and MSL1 industrial qualification for high-reliability power stages.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for high-current, low-voltage DC-DC conversion. Its 0.5–0.8 °C/W junction-to-mounting-base thermal resistance enables direct thermal coupling to copper planes, while the integrated body diode supports synchronous rectification with 28–42 ns reverse recovery time and 130–195 nC Q_rr.

The device operates with gate threshold voltage of 2.0–4.0 V and exhibits positive temperature coefficient for R_DS(on) (0.07 V/°C), supporting paralleling without current imbalance. Its 4175 pF C_iss and 255 pF C_rss support controlled dv/dt in hard-switched topologies up to 500 kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Supports 48 V input rails with 20 % margin for transient overvoltage
R_DS(on) max @ 10 V	4.1 mΩ - Enables ≤0.2 W conduction loss at 70 A continuous drain current
Q_g typ.	69 nC - Requires ≤1.4 A peak gate drive for 50 ns turn-on with 50 Ω source impedance
I_D @ T_mb = 25°C	100 A - Sustains full-load current in 300 W+ DC-DC modules with forced-air cooling
R_θJC-mb max	0.8 °C/W - Allows ≤80 °C junction rise above mounting base at 100 W dissipation
t_r/t_f	13 ns / 12 ns - Supports <500 kHz switching with minimal overlap loss in synchronous buck stages
E_AS	1000 mJ - Withstands single-pulse inductive energy in unclamped inductive load tests

Pinout & Package

PQFN 5×6 mm Outline "B" package with exposed thermal pad on bottom side; surface-mount compatible, MSL1 rated, RoHS compliant, and qualified per industrial temperature range (−55°C to +150°C).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from source to load	Internally connected to exposed thermal pad; must be soldered to large copper pour for thermal management
Source (S)	Reference node for gate drive and current return	Four parallel pins (pins 1, 2, 7, 8) reduce source inductance and improve current sharing
Gate (G)	Control terminal for channel modulation	Single pin (pin 3) with 1.2 Ω internal gate resistance; requires external gate resistor for EMI control

Key Features

Feature	Design Value
Low R_DS(on)	4.1 mΩ max at 10 V enables >96 % efficiency in 12 V → 1 V, 100 A point-of-load converters
Low-profile package	0.9 mm height allows integration into space-constrained DC-DC bricks and server VRMs
100 % R_g tested	Guarantees consistent gate drive timing across production lots for predictable switching behavior
Industry-standard pinout	Enables drop-in replacement with competing PQFN 5×6 MOSFETs without PCB redesign
MSL1 qualification	Eliminates pre-bake requirement during reflow assembly, reducing manufacturing cost and risk

Applications

Secondary Side Synchronous Rectification

Inverters for DC Motors

Use Scenario: High-current output stage of isolated 48 V → 12 V LLC resonant converter in telecom power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary-side switching.

Use Value: Reduces conduction loss by 65 % vs. 40 V Schottky, enabling 2.1 W lower heat generation at 80 A output.

Use Scenario: Half-bridge leg in 24 V brushed DC motor driver for industrial automation actuators.

IC Role / Device Role / Timing Role: High-current switching element controlling motor direction and PWM speed regulation; operated in 10–20 kHz hard-switched mode.

Use Value: Handles 100 A peak stall current with <0.4 V forward drop, minimizing I²R heating during dynamic braking.

DC-DC Brick Applications

Boost Converters

Use Scenario: Input-stage switch in 36–75 V input, 12 V output, 300 W quarter-brick DC-DC module for data center power distribution.

IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge topology; gated at 200–300 kHz with zero-voltage switching.

Use Value: 0.8 °C/W thermal resistance allows direct thermal interface to brick baseplate, eliminating need for thermal interface material.

Use Scenario: Main switch in automotive 12 V → 48 V bi-directional boost converter for mild-hybrid vehicle energy recovery.

IC Role / Device Role / Timing Role: Unidirectional high-current switch operating in continuous conduction mode at 150 kHz with 50 A average inductor current.

Use Value: 4.1 mΩ R_DS(on) limits resistive loss to 10.3 W at 50 A, enabling >94 % peak efficiency without liquid cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFN120N10P	Higher V_DS (100 V), higher R_DS(on) (6.2 mΩ), TO-247 package	Requires heatsink; unsuitable for ultra-thin bricks due to 21 mm height	Prefer when higher voltage margin or legacy through-hole assembly is required
SiR626DP	Same PQFN 5×6 package, lower R_DS(on) (3.2 mΩ), but higher Q_g (95 nC)	Slower switching; increases gate drive loss in >300 kHz designs	Prefer when conduction loss dominates and switching frequency is <200 kHz

Compared with IXFN120N10P and SiR626DP, IRFH5006TR2PBF offers optimal balance of low R_DS(on), moderate Q_g, and ultra-low profile-making it ideal for thermally constrained, high-frequency DC-DC bricks where board space and thermal resistance are critical.

Availability

IRFH5006TR2PBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick applications, and boost converters requiring stable component supply, long-term lifecycle assurance, and industrial-grade reliability.

Supply support for IRFH5006TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to Infineon's TrenchStop™ and HEXFET® families, engineered for high-efficiency, high-power-density DC-DC conversion in industrial, telecom, and computing infrastructure.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFH5006TR2PBF supports 100 A continuous drain current at T_mb = 25°C, derating linearly to 40 A at T_mb = 100°C per the datasheet's ID vs. T_mb curve. This reflects its 0.8 °C/W thermal resistance and 156 W absolute maximum power dissipation at 25°C mounting base temperature.

Does this MOSFET require a negative gate turn-off voltage?

No. The IRFH5006TR2PBF has a gate threshold voltage range of 2.0–4.0 V and is fully enhanced at V_GS = 10 V. Negative gate voltage is not required for reliable turn-off; however, −5 V may be applied to improve noise immunity in high-dV/dt environments, within the ±20 V V_GS absolute maximum rating.

Can it be used in parallel configurations?

Yes. Its positive R_DS(on) temperature coefficient (0.07 V/°C) ensures inherent current sharing when paralleled. Designers must match gate drive loop inductance and use individual gate resistors (≥5 Ω recommended) to suppress oscillation; layout symmetry is critical for thermal balance across multiple devices.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes. The integrated body diode has t_rr = 28–42 ns and Q_rr = 130–195 nC at I_F = 50 A, enabling efficient operation in synchronous rectifier topologies up to 300 kHz. Its soft recovery characteristic minimizes voltage overshoot and EMI during commutation in LLC and phase-shifted full-bridge converters.

IRFH5006TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerTDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 4.1mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 100 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 4175 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH5006TR2PBF FAQ

1.How can I place an order for IRFH5006TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5006TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5006TR2PBF reliable?

The price and inventory of IRFH5006TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5006TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH5006TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5006TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5006TR2PBF?

IRFH5006TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5006TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5006TR2PBF?

For technical support, including IRFH5006TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5006TR2PBF requirements.

6.How does Aetrix verify that IRFH5006TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH5006TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5006TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH5006TR2PBF?

All IRFH5006TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5006TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5006TR2PBF part is unused and in its original packaging.

Return procedure for IRFH5006TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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