Infineon Technologies IRFH5006TRPBF

Overview

IRFH5006TRPBF from Infineon Technologies is a 60 V, 100 A N-channel PQFN 5×6 mm power MOSFET optimized for high-efficiency synchronous rectification and DC-DC conversion. It delivers 3.5 mΩ typical R_DS(on) at V_GS = 10 V, 69 nC total gate charge, and 0.5 °C/W junction-to-mounting-base thermal resistance, enabling high-current switching in space-constrained brick converters and motor inverters.

For engineers reviewing the IRFH5006TRPBF datasheet, IRFH5006TRPBF pinout, IRFH5006TRPBF application, or IRFH5006TRPBF equivalent, key selection criteria include low-profile thermal performance (0.9 mm height), MSL1 industrial qualification, 100% R_G tested gate resistance, and compatibility with standard surface-mount assembly processes for high-volume power stage production.

Technical Context

This HEXFET device uses a trench-gated silicon process to achieve low conduction loss and fast switching dynamics. Its 4175 pF input capacitance (C_iss) and 255 pF reverse transfer capacitance (C_rss) support controlled dv/dt in hard-switched topologies, while the body diode exhibits 28–42 ns reverse recovery time and 130–195 nC Q_rr under 500 A/μs di/dt conditions.

The MOSFET operates across –55 °C to +150 °C junction temperature range with 0.029 W/°C linear derating above 25 °C ambient. Its avalanche rating supports 285 mJ single-pulse energy at 7.9 A drain current, making it suitable for unclamped inductive load handling in motor drive half-bridges and boost stages.

Key Specifications

Pinout & Package

PQFN 5 mm × 6 mm package with exposed thermal pad (Outline "B"), 0.9 mm profile, and industry-standard pinout: three terminals-Drain (D), Source (S), and Gate (G)-arranged with Drain on top side, Source on bottom side, and Gate on left edge per official Infineon mechanical drawing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IRFH5006TRPBF, IRFH5010TRPBF trades 1.1 mΩ higher on-resistance for 17 nC lower gate charge, favoring high-frequency operation, while SiR626DP offers 0.8 mΩ lower R_DS(on) at the cost of 3 nC higher Q_g, better suited for high-current, lower-frequency applications where conduction loss dominates.

Availability

IRFH5006TRPBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick modules, and boost converter applications requiring stable component supply, long-term lifecycle assurance, and MSL1-compliant manufacturing readiness.

Supply support for IRFH5006TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D and wafer fabrication infrastructure.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-efficiency switching in power conversion systems where thermal density, reliability, and manufacturability are critical.

FAQ

What is the maximum continuous drain current for IRFH5006TRPBF at 100 °C mounting base temperature?

The datasheet specifies 100 A continuous drain current at T_mb = 25 °C. At T_mb = 100 °C, the derated current is 400 A per absolute maximum ratings table, but this assumes ideal thermal interface and infinite copper area. Real-world PCB-limited operation typically sustains 65–75 A continuously at 100 °C mounting base with 2 oz copper and 4 thermal vias per mm².

Does IRFH5006TRPBF include an integrated body diode, and what are its reverse recovery characteristics?

Yes, it features a monolithic N-channel MOSFET body diode with 1.3 V forward voltage at 50 A and 25 °C. Reverse recovery time is 28–42 ns, with Q_rr of 130–195 nC under 500 A/μs di/dt, measured at V_DD = 30 V, I_F = 50 A, and T_J = 25 °C. These values are confirmed in Figure 7 and Table "Diode Characteristics".

Can IRFH5006TRPBF be used in avalanche-mode operation, and what is its rated single-pulse energy?

Yes, it is rated for unclamped inductive switching with 285 mJ single-pulse avalanche energy at I_AS = 7.9 A and starting T_J = 25 °C, per Figure 13. The device supports repetitive avalanche only if pulse energy remains below 10 % of single-pulse rating and thermal limits are observed-designs must verify junction temperature rise using Z_thJC curves in Figure 11.

What is the recommended gate resistor value for optimal switching performance in a 100 kHz boost converter?

A 1.8 Ω gate resistor is used in the datasheet's switching time test circuit (Figure 17a) and yields t_r = 13 ns and t_f = 12 ns. For 100 kHz operation with 50 % duty cycle, 1.5–2.2 Ω balances EMI suppression and switching loss. Lower values (<1 Ω) risk gate ringing; higher values (>3.3 Ω) increase t_on/t_off and conduction loss in hard-switched topologies.