Infineon Technologies IRFH5007TR2PBF

Overview

IRFH5007TR2PBF from Infineon Technologies (formerly International Rectifier) is a 75 V, 100 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized for high-efficiency synchronous rectification and DC-DC conversion with R_DS(on) = 5.9 mΩ @ V_GS = 10 V, Q_g = 65 nC, and R_θJC-mb = 0.8 °C/W - deployed in server VRMs and telecom DC-DC bricks.

For engineers reviewing the IRFH5007TR2PBF datasheet, IRFH5007TR2PBF pinout, IRFH5007TR2PBF application, or IRFH5007TR2PBF equivalent, key selection criteria include low-conduction-loss operation at high current density, thermal performance under PCB-mounted conditions, gate drive compatibility with standard 10 V logic, and avalanche ruggedness in unclamped inductive switching.

Technical Context

This MOSFET employs a trench-gated silicon process to achieve low R_DS(on) and fast switching with Q_gd = 20 nC and t_f = 11 ns. Its PQFN 5×6 mm package features exposed mounting base for direct thermal coupling to PCB copper, enabling junction-to-mounting-base thermal resistance as low as 0.5 °C/W (typical).

The device integrates a robust body diode with V_SD = 1.3 V @ I_S = 50 A and Q_rr = 170–255 nC, supporting high-frequency synchronous rectification where reverse recovery behavior directly impacts efficiency and EMI in boost and LLC topologies.

Key Specifications

Pinout & Package

PQFN 5×6 mm Outline "B" package with exposed mounting base (thermal pad), 3-pin configuration (Drain, Source, Gate), and industry-standard pinout: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source - fully compatible with automated SMT placement and reflow profiles per MSL1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with IRFH5007TR2PBF, IRFH5017TR2PBF trades 30 % higher R_DS(on) for lower gate charge (52 nC), while SiR626DP-T1-GE3 offers lower on-resistance but sacrifices voltage headroom and thermal performance due to non-PQFN packaging.

Availability

IRFH5007TR2PBF is available at Aetrix Electronics and suitable for server VRMs, telecom DC-DC bricks, and industrial motor inverters requiring stable component supply, long-term lifecycle support, and traceable RoHS-compliant sourcing.

Supply support for IRFH5007TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's OptiMOS™ Trench-MOSFET product line, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where thermal density and switching loss are primary constraints.

FAQ

What is the maximum continuous drain current at 100 °C mounting base temperature?

At T_mb = 100 °C, the continuous drain current is derated to 40 A per the Safe Operating Area curve (Fig. 9). This reflects thermal limitation of the package-to-PCB interface, not silicon capability - effective cooling via thermal vias and copper area restores full 100 A rating at T_mb = 25 °C.

Is IRFH5007TR2PBF suitable for paralleling multiple devices?

Yes - 100 % R_G testing ensures gate resistance matching within ±0.2 Ω, and the positive temperature coefficient of R_DS(on) promotes natural current sharing. Layout best practices include symmetrical gate drive routing and Kelvin source connections to minimize loop inductance imbalance.

Does this MOSFET require a negative gate turn-off voltage?

No - the gate threshold voltage range is 2.0–4.0 V, and the device is fully enhanced at V_GS = 10 V. Negative turn-off (e.g., –5 V) is not required for reliable operation, though it may improve noise immunity in high-dV/dt environments like motor drives.

What is the recommended PCB layout for optimal thermal performance?

Use ≥ 1-in² 2-oz copper on the mounting layer, connected to the exposed thermal pad via ≥ 9 thermal vias (0.3 mm diameter, 0.6 mm pitch). Avoid splitting the thermal pad with signal traces. The top-side copper should be solid and unbroken beneath the PQFN footprint to maximize heat spreading into the board.