Infineon Technologies IRFH5007TRPBF

Overview

IRFH5007TRPBF from Infineon Technologies is a 75 V, 100 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, featuring 5.9 mΩ R_DS(on) at V_GS = 10 V, 65 nC total gate charge, and 0.8 °C/W junction-to-mounting-base thermal resistance. It is engineered for high-efficiency secondary-side synchronous rectification in DC-DC bricks and boost converters.

For engineers reviewing the IRFH5007TRPBF datasheet, IRFH5007TRPBF pinout, IRFH5007TRPBF application, or IRFH5007TRPBF equivalent, key selection criteria include conduction loss (R_DS(on) ≤ 5.9 mΩ), thermal performance (R_θJC-mb ≤ 0.8 °C/W), switching speed (t_d(off) = 30 ns), and industrial-grade reliability (MSL1, 100% R_G tested).

Technical Context

This MOSFET employs a trench-gated silicon process optimized for low R_DS(on) and fast switching in hard-switched topologies. Its gate threshold voltage (V_GS(th) = 2.0–4.0 V) ensures robust turn-on margin under varying drive conditions, while the 1.2 Ω typical gate resistance supports controlled dV/dt without external gate resistors in many applications.

The device integrates a low-V_SD (1.3 V max) body diode with 31–47 ns reverse recovery time and 170–255 nC Q_rr, enabling efficient freewheeling in synchronous rectifier configurations. Its PQFN 5×6 mm package delivers <0.9 mm profile and direct thermal path to PCB mounting base for high-power-density designs.

Key Specifications

Pinout & Package

PQFN 5×6 mm Outline "B" package with exposed mounting base for thermal conduction. Surface-mount construction with industry-standard pinout compatible across multiple vendors.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with IPB052N06N3G and SIZ200DT-T1-GE3, IRFH5007TRPBF offers optimal balance of 75 V rating, 5.9 mΩ on-resistance, and proven MSL1 reliability-making it preferred for industrial DC-DC bricks where voltage margin and thermal continuity are critical.

Availability

IRFH5007TRPBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick converters, and boost converter applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRFH5007TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's StrongIRFET™ family, designed specifically for high-current, high-efficiency power conversion in industrial and telecom infrastructure where thermal performance and ruggedness are paramount.

FAQ

What is the maximum continuous drain current at 100°C mounting base temperature?

At T_mb = 100°C, the maximum continuous drain current is 40 A, derived from the linear derating curve starting at 100 A at 25°C with R_θJC-mb = 0.8 °C/W and T_J(max) = 150°C. This reflects real thermal limits under sustained PCB-conducted cooling.

Does IRFH5007TRPBF require an external gate resistor for safe operation?

No external gate resistor is strictly required due to its 1.2 Ω typical intrinsic gate resistance, which provides inherent damping. However, a 2–5 Ω series resistor is recommended in high-dV/dt environments to suppress gate ringing and ensure clean turn-off in hard-switched topologies.

Is the mounting base electrically isolated from the drain terminal?

No-the exposed mounting base is electrically connected to the drain (D) terminal, as confirmed by the internal die construction and PQFN "B" outline documentation. PCB layout must isolate the mounting pad from all other conductive planes except the drain net.

Can IRFH5007TRPBF be used in avalanche-rated circuits?

Yes-it is characterized for unclamped inductive switching with EAS = 400 mJ at I_AS = 6.6 A (T_J = 25°C). Avalanche capability is validated per JEDEC JESD24-11, but repeated operation requires careful thermal management and pulse-width limitation per Fig. 13 and 14.