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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5010TR2PBF

Name: IRFH5010TR2PBF
Brand: Infineon Technologies
SKU: IRFH5010TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5010TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH5010TR2PBF.pdf

Description:: MOSFET N-CH 100V 13A 5X6 PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:8,988

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Product details

Overview

IRFH5010TR2PBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 100 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized for high-efficiency synchronous rectification and DC-DC brick applications with R_DS(on) ≤ 9.0 mΩ @ V_GS = 10 V, Q_g = 67 nC, and R_θJC(bottom) ≤ 0.5 °C/W.

For engineers reviewing the IRFH5010TR2PBF datasheet, IRFH5010TR2PBF pinout, IRFH5010TR2PBF application, or IRFH5010TR2PBF equivalent, key selection criteria include low-conduction-loss operation at high current density, industry-standard pinout compatibility, MSL1 industrial qualification, and thermal performance validated under bottom-side PCB cooling conditions.

Technical Context

This MOSFET employs planar silicon HEXFET architecture with integrated body diode, supporting unclamped inductive switching and single-pulse avalanche energy up to 1000 mJ at I_AS = 5.4 A. Its gate threshold voltage (V_GS(th)) ranges 2.0–4.0 V with negative temperature coefficient (−8.3 mV/°C), enabling stable turn-on across −55°C to +150°C junction range.

Designed for surface-mount PCB assembly with bottom-thermal-pad cooling, it delivers 100 A continuous drain current at T_C(bottom) = 25°C and supports fast switching via low Q_gd (18 nC) and C_rss (162 pF), minimizing Miller-induced oscillation risk in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V and 60 V bus systems with 20 % derating margin
R_DS(on) max @ V_GS = 10 V	9.0 mΩ - enables ≤ 0.45 W conduction loss at 100 A DC
Q_g typical	67 nC - determines gate drive power requirement and switching speed trade-off
R_θJC(bottom)	≤ 0.5 °C/W - allows >200 W power dissipation with 100°C ΔT to PCB copper
I_D @ T_C(bottom) = 25°C	100 A - defines maximum steady-state current under direct board thermal coupling
V_GS(th)	2.0–4.0 V - ensures reliable enhancement-mode turn-on with standard 5 V or 10 V logic-level drivers
Q_rr	256–384 nC - quantifies body diode reverse recovery charge affecting synchronous rectifier efficiency

Pinout & Package

PQFN 5×6 mm package with exposed thermal pad on bottom side, compliant with JEDEC MO-220 and outline "B" mechanical drawing. Pin 1 identifier located at quadrant Q1 per tape orientation standard.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal	Internally connected to exposed copper pad; must be soldered to large PCB thermal plane
Source (S)	Reference node for gate drive and current sensing	Common return path for load current and gate driver ground; low-inductance layout critical
Gate (G)	Control input for channel modulation	High-impedance input requiring <1.2 Ω series resistance to damp ringing during fast switching

Key Features

Feature	Design Value
Low R_DS(on)	7.5 mΩ typical @ V_GS = 10 V reduces conduction losses in high-current DC-DC stages
Low-profile package	Height < 0.9 mm enables compact power module integration and improved airflow clearance
100 % R_G tested	Gate resistance of 1.2 Ω ±15 % ensures consistent switching behavior across production lots
MSL1 rating	Moisture sensitivity level 1 permits unlimited floor life before reflow, simplifying SMT line logistics
Industry-standard pinout	Three-terminal D-S-G arrangement matches common layout footprints across multiple vendors

Applications

Secondary Side Synchronous Rectification

Inverter for DC Motor Drives

Use Scenario: High-frequency LLC resonant converter output stage operating at 200–500 kHz with 12–48 V output.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce forward voltage drop and improve efficiency.

Use Value: Achieves >95 % efficiency at 50 A load due to 9 mΩ R_DS(on) and 34 ns t_rr, minimizing body diode conduction time.

Use Scenario: 3-phase H-bridge inverter driving brushed or brushless DC motors in industrial automation equipment.

IC Role / Device Role / Timing Role: High-current half-bridge switch handling bidirectional motor current up to 100 A peak.

Use Value: Supports 100 A continuous current at T_C = 25°C with 0.5 °C/W thermal resistance, enabling compact heatsink-less designs.

DC-DC Brick Converters

Industrial UPS Output Stage

Use Scenario: 48 V input, 12 V output isolated DC-DC brick delivering 600 W in 1/4-brick form factor.

IC Role / Device Role / Timing Role: Primary-side or secondary-side switching element in phase-shifted full-bridge topology.

Use Value: Low Q_g (67 nC) and Q_gd (18 nC) enable efficient 300–500 kHz operation with minimal gate drive loss.

Use Scenario: Online double-conversion UPS with battery backup, requiring robust 100 V switching capability and high reliability.

IC Role / Device Role / Timing Role: Output inverter switch sustaining repetitive avalanche events during grid fault transitions.

Use Value: Rated for 1000 mJ single-pulse avalanche energy at 5.4 A, ensuring safe operation during transient overloads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXFN110N10P3	TO-247 package, higher R_DS(on) (11 mΩ), no PQFN footprint	Requires bolt-down heatsinking; unsuitable for ultra-thin DC-DC bricks	Preferred where forced-air cooling and mechanical robustness outweigh size constraints
STL220N10F7	100 V, 120 A, 5.5 mΩ, but Q_g = 105 nC and R_θJC = 0.75 °C/W	Higher gate charge increases driver loss; lower thermal resistance still requires careful PCB copper design	Selected when lower R_DS(on) justifies increased gate drive complexity and cost

Compared with IXFN110N10P3 and STL220N10F7, IRFH5010TR2PBF offers optimal balance of low-profile packaging, proven MSL1 reliability, and verified thermal performance under bottom-cooled PCB mounting-critical for space-constrained, high-power-density applications.

Availability

IRFH5010TR2PBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick converters, and industrial motor inverter applications requiring stable component supply and long-term lifecycle support.

Supply support for IRFH5010TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap device technologies.

The IRFH5010TR2PBF belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in compact power conversion systems where thermal performance and manufacturability are critical.

FAQ

What is the maximum continuous drain current for IRFH5010TR2PBF under real-world PCB cooling?

The datasheet specifies 100 A continuous drain current at T_C(bottom) = 25°C with proper PCB copper area (≥ 10 cm² 2 oz Cu, 2-layer thermal pad connection). At T_C = 70°C, rated current drops to 11 A due to thermal derating-designers must validate actual case temperature using IR's AN-1136 footprint guidelines.

Does IRFH5010TR2PBF support gate drive from 5 V microcontrollers?

No. With V_GS(th) up to 4.0 V and R_DS(on) specified only at V_GS = 10 V, reliable enhancement-mode operation requires ≥ 8 V gate drive. Using 5 V logic risks incomplete turn-on and excessive conduction loss; a dedicated gate driver IC (e.g., IR2110 or TC4420) is mandatory.

How does the body diode performance impact synchronous rectifier design?

The body diode has V_SD = 1.3 V max and t_rr = 34–51 ns, resulting in Q_rr = 256–384 nC. In synchronous rectifiers, this reverse recovery charge causes shoot-through risk if gate timing lacks dead-time control; layout must minimize source inductance to suppress voltage spikes during diode commutation.

Is IRFH5010TR2PBF RoHS and halogen-free compliant?

Yes. The device meets RoHS Directive 2011/65/EU and is certified halogen-free (Br < 900 ppm, Cl < 900 ppm, total halogens < 1500 ppm), with no lead, brominated flame retardants, or chlorine-based solvents used in manufacturing or packaging.

IRFH5010TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 98 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 4340 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH5010TR2PBF FAQ

1.How can I place an order for IRFH5010TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5010TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5010TR2PBF reliable?

The price and inventory of IRFH5010TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5010TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH5010TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5010TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5010TR2PBF?

IRFH5010TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5010TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5010TR2PBF?

For technical support, including IRFH5010TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5010TR2PBF requirements.

6.How does Aetrix verify that IRFH5010TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH5010TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5010TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH5010TR2PBF?

All IRFH5010TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5010TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5010TR2PBF part is unused and in its original packaging.

Return procedure for IRFH5010TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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