Infineon Technologies IRFH5010TRPBF

Overview

IRFH5010TRPBF from Infineon Technologies is a 100 V, 100 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package with R_DS(on) ≤ 9.0 mΩ at V_GS = 10 V, Q_g = 67 nC, and R_θJC(Bottom) ≤ 0.5 °C/W - optimized for high-efficiency secondary-side synchronous rectification in DC-DC bricks.

For engineers reviewing the IRFH5010TRPBF datasheet, IRFH5010TRPBF pinout, IRFH5010TRPBF application, or IRFH5010TRPBF equivalent, key selection criteria include low-profile thermal performance (0.9 mm height), industry-standard pinout compatibility, 100% R_g tested gate resistance, and MSL1 industrial qualification for high-reliability power conversion designs.

Technical Context

This device operates as a unidirectional high-current switching element with integrated body diode, designed for hard-switched and resonant topologies where low conduction loss and fast switching are critical. Its PQFN 5×6 mm bottom-thermal-package enables direct PCB copper thermal spreading, supporting >100 A continuous drain current when mounted on ≥2 oz Cu with thermal vias.

The MOSFET features a gate threshold voltage of 2.0–4.0 V, forward transconductance of 206 S, and avalanche-rated operation (E_AS = 227 mJ). Its Crss = 162 pF and Q_sw = 23.3 nC support efficient gate drive design with minimal Miller-induced shoot-through risk in half-bridge configurations.

Key Specifications

Pinout & Package

PQFN 5×6 mm outline "B" package with exposed thermal pad on bottom surface; 3-pin configuration (Drain, Source, Gate) arranged in standard industry pinout for drop-in compatibility across multiple vendors.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V power MOSFET applications.

Compared with IXFN110N10P and SiR626DP, IRFH5010TRPBF delivers optimal balance of low-profile manufacturability, controlled Q_g, and proven MSL1 reliability - making it preferred for automated SMT production of high-volume DC-DC bricks and motor inverters.

Availability

IRFH5010TRPBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick power stages, and industrial motor inverter applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRFH5010TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in server power supplies, telecom infrastructure, and industrial motor drives.

FAQ

What is the maximum continuous drain current for IRFH5010TRPBF at 100°C case temperature?

At T_C(Bottom) = 100°C, the maximum continuous drain current is 40 A per the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN package under realistic PCB thermal conditions - not silicon capability alone - and assumes adequate copper area and via count for heat extraction.

Does IRFH5010TRPBF have an integrated Schottky diode?

No. It contains a parasitic body diode formed by the MOSFET's p-n junction, with V_SD = 1.3 V typical at 50 A and t_rr = 34–51 ns. This diode is not a Schottky structure and exhibits minority-carrier recovery behavior, requiring careful dead-time management in synchronous rectifier designs.

Can IRFH5010TRPBF be driven directly from a 3.3 V microcontroller GPIO?

No - its V_GS(th) range is 2.0–4.0 V, and full enhancement requires ≥10 V for R_DS(on) ≤ 9.0 mΩ. A 3.3 V signal may partially turn on the device, causing excessive heating. A dedicated gate driver (e.g., IR2110 or TC4427) with bootstrap or isolated supply is required for reliable operation.

What is the recommended PCB footprint and stencil design for IRFH5010TRPBF?

Per Infineon Application Note AN-1136, use a 4.8 × 5.8 mm thermal pad with 12–16 thermal vias (0.3 mm diameter, 0.8 mm pitch), and 0.25 mm stencil aperture for the source and drain pads. The gate pad requires 0.15 mm aperture to prevent solder bridging; solder mask defined (SMD) pads are mandatory for reliability.