Infineon Technologies IRFH5015TR2PBF

Overview

IRFH5015TR2PBF from Infineon Technologies is a 150 V, 44 A N-channel enhancement-mode HEXFET® Power MOSFET in PQFN 5×6 mm package, featuring 31 mΩ R_DS(on) at V_GS = 10 V, 36 nC total gate charge, and 0.8 °C/W junction-to-PCB thermal resistance - optimized for primary-side synchronous rectification in high-efficiency DC-DC bricks and boost converters.

For engineers reviewing the IRFH5015TR2PBF datasheet, IRFH5015TR2PBF pinout, IRFH5015TR2PBF application, or IRFH5015TR2PBF equivalent, key selection criteria include its low-profile (0.9 mm) thermally enhanced PQFN package, MSL1 industrial qualification, 100% R_G tested gate resistance, and verified avalanche energy rating of 700 mJ at I_AS = 34 A.

Technical Context

This device operates as a high-voltage, high-current switching element with a breakdown voltage of 150 V and a gate threshold voltage range of 3.0–5.0 V. Its low R_DS(on) (25.5 mΩ typ. @ 10 V) and fast switching parameters - including t_d(off) = 14 ns and Q_sw = 15.6 nC - support high-frequency operation in hard-switched topologies.

The integrated body diode exhibits V_SD = 1.3 V (typ.) at 34 A and t_rr = 52–78 ns, enabling reliable unclamped inductive switching. Thermal design is facilitated by R_θJC-mb = 0.5–0.8 °C/W and compatibility with standard PCB copper pour layouts.

Key Specifications

Pinout & Package

PQFN 5×6 mm Outline "B" package with exposed thermal pad (mounting base), 0.9 mm profile, and industry-standard pinout: three terminals - Source (S), Drain (D), Gate (G) - arranged in a single-row configuration compatible with automated SMT placement and reflow.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STL100N10F7 and IXTH120N15X2, IRFH5015TR2PBF uniquely balances 150 V rating, 31 mΩ on-resistance, and PQFN thermal performance - making it optimal for space-constrained, high-efficiency DC-DC bricks and synchronous rectifiers where voltage margin and manufacturability are critical.

Availability

IRFH5015TR2PBF is available at Aetrix Electronics and suitable for primary-side synchronous rectification, DC-DC brick converters, and high-voltage boost converter applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for IRFH5015TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion, motor control, and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_mb = 100°C, the maximum continuous drain current is 150 A per absolute maximum ratings table - but practical derating yields 22 A at 100°C mounting base temperature with 0.8 °C/W thermal resistance and 150 °C maximum junction temperature, assuming 25°C ambient and adequate PCB copper area.

Does IRFH5015TR2PBF include an integrated body diode, and what are its reverse recovery characteristics?

Yes, it features a monolithic N-channel MOSFET with integral body diode. Reverse recovery time (t_rr) is 52–78 ns at I_F = 34 A, V_DD = 75 V, and di/dt = 500 A/μs; Q_rr is 550–825 nC. These values are measured under standardized unclamped inductive test conditions and support reliable operation in synchronous rectification without external Schottky assist.

Is IRFH5015TR2PBF suitable for gate driving with 5 V logic-level controllers?

No - its gate threshold voltage range is 3.0–5.0 V, and R_DS(on) is specified at V_GS = 10 V. Driving with only 5 V results in incomplete enhancement and excessive conduction loss; a minimum 10 V gate drive (±10%) is required to achieve 31 mΩ R_DS(on) and full 44 A current capability.

How does the PQFN 5×6 mm package improve thermal performance compared to SO-8 or DPAK?

The PQFN 5×6 mm package uses a copper-exposed mounting base directly bonded to the MOSFET die backside, achieving R_θJC-mb = 0.5–0.8 °C/W - up to 5× better than SO-8 (≈4.0 °C/W) and 3× better than DPAK (≈2.5 °C/W). This enables higher power density without external heatsinks in compact DC-DC modules.