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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5020TR2PBF

Name: IRFH5020TR2PBF
Brand: Infineon Technologies
SKU: IRFH5020TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5020TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH5020TR2PBF.pdf

Description:: MOSFET N-CH 200V 5.1A 8PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:7,165

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Product details

Overview

IRFH5020TR2PBF from Infineon Technologies is a 200 V, 34 A N-channel enhancement-mode HEXFET® Power MOSFET in PQFN 5×6 mm package, featuring 47 mΩ typical R_DS(on) at V_GS = 10 V, 36 nC total gate charge, and 0.5 °C/W junction-to-case (bottom) thermal resistance. It is engineered for high-efficiency secondary-side synchronous rectification in DC-DC bricks and boost converters.

For engineers reviewing the IRFH5020TR2PBF datasheet, IRFH5020TR2PBF pinout, IRFH5020TR2PBF application, or IRFH5020TR2PBF equivalent, key selection criteria include conduction loss optimization via low R_DS(on), fast switching enabled by controlled Q_g and Q_gd, thermal performance under high-current PCB mounting, and industrial-grade reliability with MSL1 and 100% R_g testing.

Technical Context

This device operates as a unidirectional power switch with an integrated body diode optimized for reverse recovery (Q_rr = 459–689 nC, t_rr = 45–68 ns). Its gate threshold voltage (V_GS(th) = 3.0–5.0 V) ensures robust turn-on margin across temperature, while the 1.9 Ω typical gate resistance supports predictable drive loop damping.

The PQFN 5×6 mm package uses bottom-side thermal pad contact to PCB for primary heat extraction, delivering ≤0.8 °C/W R_θJC(bottom) and enabling high-power-density designs. The industry-standard pinout (G–D–S layout) ensures multi-vendor board compatibility without footprint redesign.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - Supports input rails up to 170 V DC with 15% safety margin in isolated DC-DC converters.
R_DS(on) max @ V_GS = 10 V	55 mΩ - Limits conduction loss to ≤0.63 W at 34 A continuous drain current on bottom-side heatsinked PCB.
Q_g typ.	36 nC - Enables efficient 100–500 kHz switching with <1.8 W gate drive loss using 12 V supply and 1.9 Ω gate resistor.
R_θJC(bottom) max	0.8 °C/W - Allows 34 A operation with ≤27 °C junction-to-PCB temperature rise under 25 °C case condition.
I_D @ T_C(bottom) = 25 °C	34 A - Rated continuous current assuming full thermal pad soldering to ≥2 oz copper plane with thermal vias.
V_GS(th)	3.0–5.0 V - Ensures reliable turn-on with standard 5 V or 3.3 V logic-level gate drivers without level-shifting.
Q_rr	459–689 nC - Quantifies body diode recovery charge during hard-switched freewheeling, critical for synchronous rectifier EMI and efficiency.

Pinout & Package

PQFN 5×6 mm Outline "B" package with exposed thermal pad on bottom surface; 3-pin configuration (Gate, Drain, Source) arranged in standard G–D–S order along one edge; RoHS-compliant, MSL1 rated.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal for channel inversion	Receives 10 V drive to fully enhance channel; 1.9 Ω internal R_G stabilizes switching waveform and reduces ringing.
Drain (D)	High-side power output node	Connected to input rail or transformer secondary; withstands 200 V blocking with 0.22 V/°C tempco for breakdown voltage stability.
Source (S)	Power return and reference node	Common connection point for load current return and gate driver ground; forms low-inductance loop with gate and drain terminals.

Key Features

Feature	Design Value
Low R_DS(on)	47 mΩ typ. @ V_GS = 10 V enables <0.6 W conduction loss at 34 A, directly improving converter efficiency in 12–48 V output stages.
Low-profile PQFN	≤0.9 mm height allows integration into space-constrained DC-DC modules and brick converters without airflow obstruction.
100% R_G tested	Guarantees gate resistance within ±15% of 1.9 Ω, ensuring consistent switching speed and reducing design margin requirements for gate drive sizing.
MSL1 qualification	Enables single-reflow assembly without moisture sensitivity concerns, eliminating bake steps and supporting high-yield automated manufacturing.

Applications

Secondary-Side Synchronous Rectification

DC-DC Brick Converters

Use Scenario: Replaces Schottky diodes in isolated 48 V–12 V or 24 V–5 V flyback or forward converters operating at 100–300 kHz.

IC Role / Device Role / Timing Role: Power switch conducting during transformer secondary voltage polarity reversal; body diode conducts first, then channel turns on synchronously.

Use Value: Reduces forward voltage drop from ~0.5 V to <0.1 V, cutting rectification losses by >60% versus 40 V Schottky at 20 A.

Use Scenario: Output stage switch in compact 50–100 W quarter-brick DC-DC modules with tight thermal constraints.

IC Role / Device Role / Timing Role: High-side main switch in non-isolated buck or half-bridge topologies; handles peak currents up to 34 A with minimal thermal derating.

Use Value: 0.5 °C/W R_θJC(bottom) allows full-rated current with only 2-layer PCB copper, avoiding costly thermal substrates or heatsinks.

Boost Converters

Inverter Stages for DC Motors

Use Scenario: High-side switch in PFC or battery-boost stages for industrial UPS and solar microinverters (200 V bus).

IC Role / Device Role / Timing Role: Unidirectional switch controlling energy transfer from input inductor to output capacitor; blocks 200 V during off-time.

Use Value: 200 V V_DS rating supports 170 V nominal input with headroom for line surges, eliminating need for higher-voltage, higher-R_DS(on) alternatives.

Use Scenario: Half-bridge leg in 24–48 V brushed DC motor drives requiring bidirectional current control and regenerative braking.

IC Role / Device Role / Timing Role: Low-side switch handling continuous 34 A motor current; body diode provides freewheeling path during PWM off-time.

Use Value: 45–68 ns t_rr and 459–689 nC Q_rr minimize voltage spikes and switching loss during diode commutation, reducing snubber complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5020TRPBF	Same die, 4000-piece tape-and-reel vs. 400-piece; identical electrical specs and thermal performance.	No functional difference; selected for volume procurement where larger reels reduce changeover frequency.	Prefer TRPBF for high-volume production runs; TR2PBF suits prototyping and low-volume builds.
SiR872DP-T1-GE3	200 V, 32 A, R_DS(on) = 52 mΩ, Q_g = 32 nC, same PQFN 5×6 package but Vishay silicon.	Slightly lower Q_g improves light-load efficiency; different V_GS(th) range (2.5–4.5 V) may require gate drive validation.	Consider when optimizing for gate drive loss or sourcing diversification; verify body diode Q_rr (510 nC) matches system EMI targets.

Compared with IRFH5020TRPBF, the TR2PBF offers identical performance in a smaller reel size ideal for pilot builds, while SiR872DP-T1-GE3 delivers marginally lower gate charge but requires revalidation of gate drive timing and body diode behavior in synchronous rectifier layouts.

Availability

IRFH5020TR2PBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick converters, and boost converter applications requiring stable component supply, consistent PQFN 5×6 packaging, and industrial-qualified reliability.

Supply support for IRFH5020TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRFH5020 belongs to Infineon's HEXFET® Power MOSFET product line, designed specifically for high-efficiency, high-current switching in power supplies, motor drives, and renewable energy systems where thermal density and conduction loss are critical.

FAQ

What is the maximum continuous drain current for IRFH5020TR2PBF at 70°C ambient?

The maximum continuous drain current at T_A = 70°C is 21 A when mounted on a standard FR-4 PCB with 1 in² 2-oz copper area and no forced airflow. This rating assumes V_GS = 10 V and accounts for thermal derating from the 34 A T_C = 25°C value using R_θJA = 35 °C/W.

Does IRFH5020TR2PBF require a gate resistor for stable switching?

Yes - a series gate resistor (typically 5–15 Ω) is required to dampen parasitic oscillation caused by gate-drain capacitance (C_rss = 33 pF) and PCB trace inductance. The device's 1.9 Ω internal R_G alone is insufficient for clean turn-on/turn-off in most layouts; external resistance controls dV/dt and EMI.

Can IRFH5020TR2PBF be used in avalanche mode?

Yes - it is rated for unclamped inductive switching with E_AS = 320 mJ at I_D = 7.5 A and T_J = 25°C. However, avalanche operation must be limited to single-pulse conditions; repetitive avalanche is not characterized and may degrade reliability over time.

Is the PQFN 5×6 package lead-free and halogen-free?

Yes - IRFH5020TR2PBF is RoHS-compliant and fully halogen-free, containing no lead, brominated flame retardants, or chlorine-based compounds. The package meets JEDEC MSL1 requirements and supports Pb-free reflow profiles up to 260°C peak temperature.

IRFH5020TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 5.1A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 55mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id:: 5V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 2290 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH5020TR2PBF FAQ

1.How can I place an order for IRFH5020TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5020TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5020TR2PBF reliable?

The price and inventory of IRFH5020TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5020TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH5020TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5020TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5020TR2PBF?

IRFH5020TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5020TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5020TR2PBF?

For technical support, including IRFH5020TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5020TR2PBF requirements.

6.How does Aetrix verify that IRFH5020TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH5020TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5020TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH5020TR2PBF?

All IRFH5020TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5020TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5020TR2PBF part is unused and in its original packaging.

Return procedure for IRFH5020TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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