Infineon Technologies IRFH5053TR2PBF

Overview

IRFH5053TR2PBF from Infineon Technologies (formerly International Rectifier) is a 100V, 7.4A N-channel PQFN-packaged power MOSFET optimized for secondary-side synchronous rectification in high-efficiency AC-DC and DC-DC converters. It delivers 14.4 mΩ typical R_DS(on) at V_GS = 10 V, 24 nC total gate charge, and 1.6 °C/W junction-to-case thermal resistance, enabling compact, thermally robust designs in 3-phase boost and LLC resonant topologies.

For engineers reviewing the IRFH5053TR2PBF datasheet, IRFH5053TR2PBF pinout, IRFH5053TR2PBF application, or IRFH5053TR2PBF equivalent, key selection criteria include its low R_DS(on) at 10 V drive, fully characterized avalanche capability (21 mJ E_AS), RoHS-compliant lead-free PQFN package with large source pad for solder reliability, and validated performance in unclamped inductive switching at di/dt = 800 A/µs.

Technical Context

This MOSFET employs a trench-gated HEXFET structure with optimized cell pitch and deep-trench isolation to achieve low on-resistance while maintaining robust short-circuit withstand time and controlled body diode reverse recovery (Q_rr = 210–320 nC, t_rr = 31–47 ns). Its gate threshold voltage (V_GS(th) = 3.0–4.9 V) ensures stable turn-on under wide temperature ranges (–55°C to +150°C).

The device features a fully characterized unclamped inductive switching (UIS) rating (E_AS = 21 mJ at T_J = 25°C), 100% RG-tested gate resistance (0.8 Ω typ.), and linear derating factor of 0.025 W/°C above 70°C ambient - critical for sustained operation in high-density power stages without forced airflow.

Key Specifications

Pinout & Package

PQFN 3.3 × 3.3 mm, 8-pin, exposed-drain thermal pad (pin 1 = Gate, pins 2–4 & 6–8 = Source, pin 5 = Drain). Package enables low-inductance layout and efficient heat transfer via bottom-side thermal pad soldered to PCB ground plane.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IPB120N10N3 G and SIZ200DT-T1-GE3, IRFH5053TR2PBF offers the optimal balance of low-profile packaging, moderate gate charge, and verified avalanche ruggedness - making it preferred for space-constrained, high-reliability telecom and server power stages where thermal management and fault tolerance are co-critical.

Availability

IRFH5053TR2PBF is available at Aetrix Electronics and suitable for server PSU secondary rectification, telecom 48 V DC-DC converters, and industrial motor drive auxiliary supplies requiring stable component supply across multi-year production cycles.

Supply support for IRFH5053TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The IRFH5053TR2PBF belongs to Infineon's HEXFET® PQFN power MOSFET product line, engineered specifically for high-frequency, high-efficiency synchronous rectification and switching in space-constrained AC-DC and isolated DC-DC converters.

FAQ

What is the maximum continuous drain current at 70°C ambient?

The IRFH5053TR2PBF supports 7.4 A continuous drain current at T_A = 70°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This rating assumes adequate PCB copper area (≥1 in² 2-oz copper) for thermal dissipation and accounts for the device's 0.025 W/°C linear derating factor above 70°C ambient.

Is IRFH5053TR2PBF suitable for 5 V gate drive?

No - the gate threshold voltage range is 3.0–4.9 V, and R_DS(on) is only guaranteed at V_GS = 10 V. At 5 V drive, R_DS(on) increases significantly (>60 mΩ), causing excessive conduction loss. A dedicated 10 V gate driver or bootstrap circuit is required for full performance.

Does this MOSFET include an integrated body diode?

Yes - it features a monolithic intrinsic p-n junction body diode with V_SD = 1.3 V max at I_S = 7.4 A and T_J = 25°C. The diode is fully characterized for reverse recovery (Q_rr = 210–320 nC, t_rr = 31–47 ns), enabling accurate dead-time optimization in synchronous rectifier designs.

What is the recommended PCB footprint for thermal performance?

Infineon specifies a minimum 3.3 × 3.3 mm thermal pad with 8–10 vias (0.3 mm diameter, filled or capped) connecting to inner-layer ground planes. The datasheet Figure 8 "PQFN Package Details" defines exact solder mask openings and stencil aperture (80% area ratio) to ensure void-free solder joints and maintain R_θJC ≤ 1.6 °C/W.