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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5104TR2PBF

Name: IRFH5104TR2PBF
Brand: Infineon Technologies
SKU: IRFH5104TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5104TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-VQFN Exposed Pad

Datasheet:: IRFH5104TR2PBF.pdf

Description:: MOSFET N-CH 40V 24A/100A PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:336

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Product details

Overview

IRFH5104TR2PBF from Infineon Technologies is a 40 V, 100 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized for high-current synchronous rectification and DC-DC brick applications with R_DS(on) ≤ 3.5 mΩ at V_GS = 10 V and thermal resistance R_θJC(bottom) ≤ 1.1 °C/W.

For engineers reviewing the IRFH5104TR2PBF datasheet, IRFH5104TR2PBF pinout, IRFH5104TR2PBF application, or IRFH5104TR2PBF equivalent, key selection criteria include low-conduction-loss operation at 50–100 A loads, fast switching (Q_g = 53 nC, t_f = 10 ns), bottom-side thermal interface compatibility, and industrial-grade MSL1 qualification.

Technical Context

This device employs a trench-gated silicon MOSFET structure enabling low R_DS(on) and high current density in a 5×6 mm PQFN package with exposed drain pad on the bottom surface. Its gate threshold voltage (V_GS(th)) ranges from 2.0 to 4.0 V, and it features integrated body diode with V_SD ≤ 1.3 V and Q_rr = 130–195 nC at I_F = 50 A.

Designed for hard-switched and synchronous rectifier topologies, it supports unclamped inductive switching with E_AS = 500 mJ at I_AS = 8.3 A and exhibits stable R_DS(on) temperature coefficient (0.05 V/°C) and negative V_GS(th) drift (−8.9 mV/°C).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for secondary-side rectification in 12–24 V output DC-DC converters
R_DS(on) max @ V_GS = 10 V	3.5 mΩ - Enables ≤3.5 W conduction loss at 100 A, critical for >95% efficiency in high-current bricks
Q_g typical	53 nC - Determines gate drive power requirement; compatible with standard 1–2 A peak gate drivers
R_θJC (bottom)	1.1 °C/W - Allows direct PCB copper thermal spreading for >100 W continuous dissipation without heatsink
I_D @ T_C(bottom) = 25°C	100 A - Rated continuous current under ideal bottom-side cooling, matching 1/4-brick DC-DC thermal envelopes
t_f	10 ns - Supports >500 kHz switching in boost and LLC resonant converters with minimal switching loss
V_GS(th)	2.0–4.0 V - Ensures robust turn-on margin with 5 V logic-level gate drivers and noise immunity

Pinout & Package

PQFN 5×6 mm package with exposed drain (D) on bottom side, 3-terminal surface-mount configuration: Gate (G), Drain (D), Source (S). Thermal pad soldered to PCB for primary heat extraction.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Receives PWM signal; requires 53 nC charge to fully enhance; RG = 1.4 Ω limits ringing
D	Drain connection	High-side or low-side switch node; electrically connected to bottom thermal pad for thermal + electrical path
S	Source reference	Return path for load current; tied to ground or floating node depending on topology (e.g., synchronous rectifier cathode)

Key Features

Feature	Design Value
Low R_DS(on)	≤3.5 mΩ reduces I²R losses by >40% vs. comparable 5×6 MOSFETs at 50 A, directly improving power stage efficiency
Bottom-side thermal interface	R_θJC(bottom) ≤ 1.1 °C/W enables >100 W dissipation using only 2 oz. internal copper layers-no external heatsink required
100% R_G tested	Guarantees gate resistance ≤1.4 Ω across lot, ensuring consistent switching timing and driver stress across production units
MSL1 industrial qualification	Rated for reflow up to 260°C and qualified per JESD22-A110, supporting high-reliability industrial and telecom power systems
Industry-standard pinout	Compatible with layout footprints of IRFH5004, SiR872DP, and CSD18540Q5B-enabling multi-source design flexibility

Applications

Secondary Side Synchronous Rectification

Inverters for DC Motors

Use Scenario: High-efficiency 12–24 V output DC-DC bricks in server PSUs and telecom power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diodes to reduce forward voltage drop and conduction loss.

Use Value: Achieves ≥0.8% absolute efficiency gain over 40 V Schottky at 50 A due to 3.5 mΩ R_DS(on) and 1.3 V body diode V_SD.

Use Scenario: 24–48 V brushed DC motor drives in industrial automation and robotics.

IC Role / Device Role / Timing Role: Half-bridge high-side or low-side switch controlling motor direction and braking via PWM.

Use Value: Supports 100 A continuous stall current with <1.1 °C/W thermal resistance, eliminating need for forced air cooling.

DC-DC Brick Applications

Boost Converters

Use Scenario: Input-stage switching in isolated 1/4-brick and 1/8-brick DC-DC modules.

IC Role / Device Role / Timing Role: Primary-side or secondary-side power switch operating at 300–600 kHz with hard-switching duty.

Use Value: Delivers 100 A at 25°C case temperature with 53 nC Q_g, enabling compact gate driver integration and reduced board area.

Use Scenario: High-current boost stages in battery-powered industrial equipment and solar charge controllers.

IC Role / Device Role / Timing Role: Main switching element in non-isolated boost converter handling 40 V input and 60–100 V output.

Use Value: With 40 V V_DS rating and 10 ns fall time, sustains >96% efficiency at 5 kW output while minimizing EMI through controlled dv/dt.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5004TR2PBF	R_DS(on) = 4.5 mΩ (higher), Q_g = 44 nC (lower), same PQFN 5×6 package	Lower gate drive demand but higher conduction loss at >60 A; suited for lower-current, cost-sensitive designs	Select when gate drive capability is limited and peak current ≤60 A
CSD18540Q5B	R_DS(on) = 3.2 mΩ (lower), Q_g = 56 nC (slightly higher), same footprint and V_DS	Better conduction efficiency but tighter V_GS(th) tolerance (1.2–2.2 V); requires careful gate bias design	Select when maximum efficiency at full load is prioritized and gate drive is robust

Compared with IRFH5004TR2PBF and CSD18540Q5B, IRFH5104TR2PBF offers the optimal balance of low R_DS(on), moderate Q_g, and wide V_GS(th) range-making it preferred for industrial DC-DC bricks where reliability under variable gate drive and thermal stress is critical.

Availability

IRFH5104TR2PBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick applications, and boost converters requiring stable component supply, long-term industrial lifecycle support, and MSL1 reflow compatibility.

Supply support for IRFH5104TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ T2 power MOSFET product line, engineered for high-current, high-efficiency DC-DC conversion in telecom, server, and industrial power supplies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFH5104TR2PBF supports 19 A continuous drain current at T_C(bottom) = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN 5×6 package's bottom-side thermal path under real-world PCB copper constraints and ambient conditions.

Does this MOSFET include an integrated body diode, and what are its recovery characteristics?

Yes, it integrates a planar N-channel MOSFET body diode with V_SD ≤ 1.3 V at I_S = 50 A and reverse recovery charge Q_rr = 130–195 nC. Recovery time t_rr is 31–47 ns at dI/dt = 500 A/μs, making it suitable for synchronous rectification where fast, low-loss freewheeling is required.

Can IRFH5104TR2PBF be used in avalanche-rated circuits?

Yes-it is characterized for unclamped inductive switching with single-pulse avalanche energy E_AS = 500 mJ at I_AS = 8.3 A. This rating applies under defined test conditions (T_J = 25°C, L = known, R_G = 0.01 Ω) and supports limited-energy fault handling in motor drive and DC-DC protection schemes.

Is the PQFN 5×6 package lead-free and RoHS compliant?

Yes, IRFH5104TR2PBF is RoHS compliant and lead-free, containing no lead, bromide, or halogen. It meets JEDEC MSL1 moisture sensitivity level and is qualified for standard Pb-free reflow profiles up to 260°C peak temperature.

IRFH5104TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-VQFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3120 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6)

IRFH5104TR2PBF FAQ

1.How can I place an order for IRFH5104TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5104TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5104TR2PBF reliable?

The price and inventory of IRFH5104TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5104TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH5104TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5104TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5104TR2PBF?

IRFH5104TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5104TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5104TR2PBF?

For technical support, including IRFH5104TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5104TR2PBF requirements.

6.How does Aetrix verify that IRFH5104TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH5104TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5104TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH5104TR2PBF?

All IRFH5104TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5104TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5104TR2PBF part is unused and in its original packaging.

Return procedure for IRFH5104TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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