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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5104TRPBF

Name: IRFH5104TRPBF
Brand: Infineon Technologies
SKU: IRFH5104TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5104TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-VQFN Exposed Pad

Datasheet:: IRFH5104TRPBF.pdf

Description:: MOSFET N-CH 40V 24A/100A PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:8,219

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Product details

Overview

IRFH5104TRPBF from Infineon Technologies is a 40 V, 100 A N-channel enhancement-mode HEXFET^® Power MOSFET in PQFN 5×6 mm package, optimized for high-current synchronous rectification and DC-DC conversion. It delivers 3.5 mΩ R_DS(on) at V_GS = 10 V, 53 nC total gate charge, and 1.1 °C/W junction-to-case (bottom) thermal resistance, enabling high-efficiency power stages in server VRMs and telecom bricks.

For engineers reviewing the IRFH5104TRPBF datasheet, IRFH5104TRPBF pinout, IRFH5104TRPBF application, or IRFH5104TRPBF equivalent, key selection criteria include low conduction loss at 50–100 A load currents, fast switching with 23.8 nC switch charge, robust avalanche capability (120 mJ), and compatibility with standard surface-mount assembly for high-density PCB layouts.

Technical Context

This device operates as a unidirectional high-side or low-side power switch in hard-switched and synchronous rectifier topologies. Its 40 V BVDSS rating supports 12 V and 24 V input rails, while the 2.9–3.5 mΩ R_DS(on) range (T_J = 25–125 °C) ensures stable conduction performance across industrial temperature ranges.

The gate threshold voltage (2.0–4.0 V) and 1.4 Ω gate resistance support direct drive from common PWM controllers without external gate buffers. Its 3120 pF C_iss, 650 pF C_oss, and 310 pF C_rss enable predictable turn-on/turn-off timing with 9.5 ns t_d(on), 15 ns t_r, 20 ns t_d(off), and 10 ns t_f under 1.7 Ω gate drive.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Supports 24 V nominal bus systems with 66% derating margin for transients
R_DS(on) max @ V_GS = 10 V	3.5 mΩ - Enables ≤3.5 W conduction loss at 100 A continuous drain current
Q_g typical	53 nC - Determines gate driver power requirement and switching loss trade-off
I_D @ T_C(Bottom) = 25 °C	100 A - Specifies maximum continuous current with bottom-side heatsinking
R_θJC(Bottom)	1.1 °C/W - Allows direct thermal coupling to PCB copper pour for >90 W dissipation
Q_sw (Q_gs2 + Q_gd)	23.8 nC - Governs turn-off energy and EMI behavior in high-frequency converters
E_AS single-pulse	120 mJ - Provides ruggedness against inductive switching faults in motor drives

Pinout & Package

PQFN 5×6 mm (Outline "B") package with exposed thermal pad on bottom side; industry-standard 3-pin configuration (Drain, Source, Gate) compatible with multi-vendor layout footprints.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path collector	Internally connected to thermal pad; must be soldered to large PCB copper area for thermal management
Source (S)	Current return and reference node	Common node for gate drive return and current sensing; low-inductance routing critical for stability
Gate (G)	Control terminal	High-impedance input requiring controlled slew rate; 1.4 Ω internal gate resistance reduces ringing

Key Features

Feature	Design Value
Low R_DS(on) ≤ 3.5 mΩ	Reduces I²R conduction losses by >40% vs. comparable 5×6 mm MOSFETs at 50 A
R_θJC(Bottom) ≤ 1.1 °C/W	Enables >90 W power handling with 2 oz copper and 4-layer PCB thermal vias
100% R_G tested	Guarantees consistent switching timing and eliminates gate drive design margin uncertainty
MSL1 industrial qualification	Supports lead-free reflow without popcorn cracking or interfacial delamination
Low profile ≤ 0.9 mm	Permits stacking of dual-phase power stages in <5 mm board height applications

Applications

Secondary Side Synchronous Rectification

Inverter for DC Motors

Use Scenario: High-efficiency 48 V to 12 V isolated DC-DC converter in telecom power supply.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode in LLC resonant topology.

Use Value: Achieves >97% efficiency at 60 A output by reducing forward drop from 0.5 V to <0.05 V at full load.

Use Scenario: 24 V brushed DC motor drive in automated guided vehicle (AGV) control module.

IC Role / Device Role / Timing Role: Half-bridge high-side switch controlling motor direction and braking via PWM.

Use Value: Delivers 100 A peak current with <1.2 V saturation voltage, minimizing heat sink size and improving torque response.

DC-DC Brick Applications

Boost Converters

Use Scenario: Input-stage switch in 36–75 V input, 12 V/100 A intermediate bus converter (IBC).

IC Role / Device Role / Timing Role: Primary-side high-current switch operating at 300 kHz with forced-air cooling.

Use Value: Maintains <40 °C junction rise above ambient using only PCB copper, eliminating discrete heatsink.

Use Scenario: 12 V to 24 V boost stage in solar charge controller for battery bank charging.

IC Role / Device Role / Timing Role: Main power switch in non-isolated boost topology with 100 kHz switching frequency.

Use Value: Limits conduction loss to <2.1 W at 50 A, enabling >95% efficiency without active cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5004TRPBF	R_DS(on) = 4.0 mΩ (higher), Q_g = 45 nC (lower), same package	Slightly lower switching loss but higher conduction loss above 40 A	Prefer when gate drive strength is limited and load current rarely exceeds 60 A
SiR626DP-T1-GE3	R_DS(on) = 3.2 mΩ (lower), Q_g = 62 nC (higher), same 5×6 mm PQFN	Better conduction efficiency but requires stronger gate driver for same dV/dt control	Prefer when thermal budget is tight and gate driver can source/sink ≥2 A peak

Compared with IRFH5104TRPBF, IRFH5004TRPBF trades conduction loss for easier gate drive, while SiR626DP-T1-GE3 improves R_DS(on) at the cost of higher Q_g-making IRFH5104TRPBF optimal for balanced 50–100 A designs with standard 1.5 A gate drivers.

Availability

IRFH5104TRPBF is available at Aetrix Electronics and suitable for secondary side synchronous rectification, DC-DC brick applications, and boost converters requiring stable component supply and long-term production continuity.

Supply support for IRFH5104TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with over 30 years of MOSFET innovation.

The IRFH5104TRPBF belongs to Infineon's TrenchHEXFET^® product line, engineered specifically for high-current, high-frequency DC-DC conversion where low R_DS(on), fast switching, and thermal reliability are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRFH5104TRPBF supports 19 A continuous drain current at T_C(Bottom) = 100 °C, as specified in the Absolute Maximum Ratings table. This value reflects thermal limitation of the PQFN package under real-world PCB heatsinking conditions-not silicon capability-and assumes adequate copper area and thermal vias beneath the exposed drain pad.

Does this MOSFET include an integrated body diode, and what is its reverse recovery performance?

Yes, it features an integral reverse p–n junction body diode rated for 100 A continuous source current. Its reverse recovery time is 31–47 ns with Q_rr of 130–195 nC at T_J = 25 °C and I_F = 50 A, enabling use in synchronous rectification without external Schottky replacement in most 100–300 kHz applications.

Is the IRFH5104TRPBF RoHS compliant and halogen-free?

Yes, the IRFH5104TRPBF is fully RoHS compliant and halogen-free per JEDEC J-STD-709, containing no lead, brominated flame retardants, or chlorine-based compounds. The PQFN package meets IPC/JEDEC J-STD-020 MSL1 rating for moisture sensitivity, supporting standard lead-free reflow profiles without preconditioning.

Can this device be used in avalanche-rated circuits, and what is its single-pulse energy rating?

Yes, it is characterized for unclamped inductive switching with a guaranteed single-pulse avalanche energy (E_AS) of 120 mJ at T_J = 25 °C. This rating applies under defined test conditions (I_AS = 50 A, V_DD = 20 V, L = 0.1 mH) and supports reliable operation in motor drive freewheeling and relay snubbing applications without external protection.

IRFH5104TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-VQFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.5mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 80 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3120 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 114W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6)

IRFH5104TRPBF FAQ

1.How can I place an order for IRFH5104TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5104TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5104TRPBF reliable?

The price and inventory of IRFH5104TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5104TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH5104TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5104TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5104TRPBF?

IRFH5104TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5104TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5104TRPBF?

For technical support, including IRFH5104TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5104TRPBF requirements.

6.How does Aetrix verify that IRFH5104TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH5104TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5104TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH5104TRPBF?

All IRFH5104TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5104TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5104TRPBF part is unused and in its original packaging.

Return procedure for IRFH5104TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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