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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5106TR2PBF

Name: IRFH5106TR2PBF
Brand: Infineon Technologies
SKU: IRFH5106TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5106TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH5106TR2PBF.pdf

Description:: MOSFET N-CH 60V 100A 5X6 PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFH5106TR2PBF from Infineon Technologies is a 60 V, 100 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, featuring 4.65 mΩ typical R_DS(on) at V_GS = 10 V, 50 nC total gate charge, and 1.1 °C/W junction-to-case (bottom) thermal resistance - optimized for high-efficiency secondary-side synchronous rectification in DC-DC bricks and boost converters.

For engineers reviewing the IRFH5106TR2PBF datasheet, IRFH5106TR2PBF pinout, IRFH5106TR2PBF application, or IRFH5106TR2PBF equivalent, key selection criteria include low conduction loss (≤5.6 mΩ max), fast switching (t_d(off) = 23 ns), robust avalanche capability (96 mJ), RoHS-compliant PQFN packaging, and MSL1 industrial qualification for high-reliability power conversion designs.

Technical Context

This device operates as a unidirectional high-current power switch with integrated body diode, designed for hard-switched and synchronous rectifier topologies where low R_DS(on) and minimized gate charge reduce conduction and switching losses. Its 1.4 Ω typical gate resistance and 205 pF reverse transfer capacitance support stable gate drive in high-frequency (>500 kHz) DC-DC applications.

The MOSFET exhibits a gate threshold voltage of 2.0–4.0 V, negative temperature coefficient for V_GS(th) (−8.5 mV/°C), and normalized on-resistance drift of ≤2.0× from 25°C to 150°C - enabling predictable current sharing in paralleled configurations and thermal stability under transient load conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports input/output rails up to 48 V nominal systems with 20% margin for voltage transients
R_DS(on) max @ V_GS = 10 V	5.6 mΩ - limits conduction loss to ≤2.8 W at 100 A continuous drain current
Q_g typical	50 nC - determines gate drive power requirement (~1.5 mW per MHz at 10 V drive)
I_D @ T_C(Bottom) = 25°C	100 A - enables single-device operation in 500 W+ DC-DC brick outputs without paralleling
R_θJC(Bottom) max	1.1 °C/W - allows direct PCB copper thermal spreading to achieve <100°C junction rise at full load
E_AS	96 mJ - sustains unclamped inductive switching events in boost converter freewheeling phase
V_SD max	1.3 V - defines forward voltage drop of integrated body diode during reverse recovery

Pinout & Package

PQFN 5×6 mm (Outline "B") package with exposed bottom thermal pad; 3-terminal configuration (Drain, Source, Gate) and industry-standard pinout compatible with multi-vendor layout footprints.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output terminal	Internally connected to exposed copper pad - must be soldered to large PCB thermal plane for R_θJC performance
Source (S)	Reference node for gate drive and current sensing	Common return path for load current and gate driver ground - requires low-inductance routing
Gate (G)	Control electrode for channel modulation	High-impedance input requiring <50 nC charge for full enhancement; sensitive to ESD and ringing

Key Features

Feature	Design Value
Low R_DS(on) (≤5.6 mΩ)	Reduces I²R conduction loss by >30% vs. comparable 60 V MOSFETs in 5×6 mm footprint
Low R_θJC(Bottom) (≤1.1 °C/W)	Enables >75 W power dissipation with 75°C case temperature rise using 2 oz copper and 4 thermal vias
100% R_G tested	Guarantees gate resistance within 1.4 ±0.2 Ω - critical for consistent turn-on/turn-off timing across production lots
MSL1 industrial qualification	Supports lead-free reflow without popcorn effect or interfacial delamination in high-volume SMT lines
RoHS compliant, halogen-free	Meets IPC-J-STD-609A Class 1 definition - eliminates brominated flame retardants and lead in assembly

Applications

Secondary-Side Synchronous Rectification

High-Density DC-DC Brick

Use Scenario: Replacing Schottky diodes in isolated 12 V → 1.2 V, 60 A buck-derived secondary-side converters.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch synchronized to primary-side PWM controller timing.

Use Value: Cuts conduction loss by 65% versus 40 V Schottky, improving efficiency from 89% to 93% at full load.

Use Scenario: Output stage switching element in 300–500 W telecom DC-DC bricks operating at 300–500 kHz.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) main switch in half-bridge or active clamp forward topology.

Use Value: Enables 500 W output in 50.8 × 50.8 mm footprint with <1.5°C/W thermal resistance to heatsink.

Industrial Boost Converter

Inverter for Brushless DC Motor

Use Scenario: Step-up stage in solar microinverter MPPT circuits converting 20–40 V PV input to 400 V DC bus.

IC Role / Device Role / Timing Role: High-side boost switch operating in continuous conduction mode with 100 kHz–200 kHz switching.

Use Value: Achieves >98.2% peak efficiency due to 4.65 mΩ R_DS(on) and 20.9 nC Q_sw minimizing combined losses.

Use Scenario: Phase-leg low-side switch in 24–48 V, 30 A three-phase BLDC motor drives for HVAC and robotics.

IC Role / Device Role / Timing Role: Fast-turning, avalanche-rated switching element handling 150 A peak inverter short-circuit conditions.

Use Value: Survives 10,000+ unclamped inductive switching cycles at 60 V, 50 A without degradation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH50N60L2	600 V rating, TO-247 package, R_DS(on) = 45 mΩ - higher voltage, lower current density, slower switching	Suitable for offline PFC stages, not DC-DC bricks due to larger size and higher Q_g	Select when primary-side high-voltage switching is required; avoid for space-constrained synchronous rectification
SiR626DP	60 V, PQFN 5×6 mm, R_DS(on) = 4.2 mΩ, Q_g = 42 nC - slightly lower R_DS(on), lower gate charge, same footprint	Drop-in replacement with improved efficiency in high-frequency boost converters	Prefer for new designs targeting <100 ns t_f and <40 nC Q_g; verify gate drive strength compatibility

Compared with IXTH50N60L2 and SiR626DP, IRFH5106TR2PBF offers balanced trade-offs: superior thermal resistance (1.1 vs. ≥2.5 °C/W) over TO-247 alternatives, and proven avalanche ruggedness (96 mJ) exceeding many 5×6 mm competitors - making it optimal for industrial DC-DC and motor control where reliability under overload is critical.

Availability

IRFH5106TR2PBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, high-density DC-DC brick designs, and industrial boost converter applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRFH5106TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-efficiency, high-power-density switching applications in server power supplies, telecom infrastructure, and industrial motor drives.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFH5106TR2PBF supports 17 A continuous drain current at T_C(Bottom) = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN 5×6 mm package and assumes proper PCB copper area and via count for heat extraction.

Does this MOSFET require a gate resistor for reliable operation?

Yes - a series gate resistor (typically 2.2–10 Ω) is required to dampen ringing caused by gate-drain capacitance (C_rss = 205 pF) and PCB inductance. Without it, overshoot exceeding ±20 V gate rating may occur, risking device failure during fast switching transitions.

Can IRFH5106TR2PBF be used in parallel configurations?

Yes - its negative temperature coefficient for R_DS(on) and matched threshold voltage (2.0–4.0 V) enable stable current sharing. Designers must ensure symmetrical layout, identical gate drive paths, and thermal coupling between devices to maintain balance within ±10% current mismatch at full load.

Is the body diode suitable for reverse recovery in hard-switched topologies?

The integrated body diode has t_rr = 28–42 ns and Q_rr = 130–195 nC at T_J = 25°C, making it viable for synchronous rectification but not recommended for high-di/dt freewheeling without snubbing. Use only with controlled turn-on timing to avoid cross-conduction in half-bridge configurations.

IRFH5106TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 5.6mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 75 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 3090 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH5106TR2PBF FAQ

1.How can I place an order for IRFH5106TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5106TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5106TR2PBF reliable?

The price and inventory of IRFH5106TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5106TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH5106TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5106TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5106TR2PBF?

IRFH5106TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5106TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5106TR2PBF?

For technical support, including IRFH5106TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5106TR2PBF requirements.

6.How does Aetrix verify that IRFH5106TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH5106TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5106TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH5106TR2PBF?

All IRFH5106TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5106TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5106TR2PBF part is unused and in its original packaging.

Return procedure for IRFH5106TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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