My Inquiry
My Account
Infineon Technologies IRFH5106TRPBF
- Part No.:
- IRFH5106TRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerVDFN
- Datasheet:
-
IRFH5106TRPBF.pdf
- Description:
- MOSFET N-CH 60V 21A/100A 8PQFN
- Quantity:
- Payment:
- Shipping:
Inventory:2,218
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IRFH5106TRPBF from Infineon Technologies (formerly International Rectifier) is a 60 V, 100 A N-channel PQFN 5×6 mm power MOSFET optimized for high-efficiency secondary-side synchronous rectification and DC-DC brick applications, featuring 4.65 mΩ typical RDS(on) at VGS = 10 V, 50 nC total gate charge, and 0.5 °C/W thermal resistance to PCB.
For engineers reviewing the IRFH5106TRPBF datasheet, IRFH5106TRPBF pinout, IRFH5106TRPBF application, or IRFH5106TRPBF equivalent, key selection criteria include low-conduction-loss operation at high current density, thermal performance under bottom-side cooling, unclamped inductive switching capability, and compatibility with standard surface-mount assembly processes for high-volume power supply manufacturing.
Technical Context
This HEXFET Power MOSFET employs a trench-gate silicon process with integrated body diode, designed for hard-switched and synchronous rectifier topologies where fast turn-on/turn-off dynamics (td(on) = 8.1 ns, tf = 9.5 ns) and low Qgd/Qgs ratio reduce switching loss. Its 1.4 Ω gate resistance and 205 pF Crss support stable gate drive with minimal ringing.
The device operates across –55 °C to +150 °C junction temperature, with gate threshold voltage tightly specified (2.0–4.0 V) and negative temperature coefficient (–8.5 mV/°C), enabling predictable turn-on behavior in thermally varying environments such as server VRMs and telecom power modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Supports 48 V input bus systems with 20 % margin for transient overvoltage |
| RDS(on) max @ VGS = 10 V | 5.6 mΩ - Enables ≤0.56 W conduction loss at 100 A continuous drain current |
| Qg typical | 50 nC - Determines gate driver power requirement (~1.5 mW per MHz at 15 V drive) |
| ID @ TC(Bottom) = 25 °C | 100 A - Rated for continuous operation with direct PCB copper thermal path |
| RθJC(Bottom) max | 1.1 °C/W - Allows ~110 W power dissipation before reaching 150 °C junction limit |
| VGS(th) | 2.0–4.0 V - Ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers |
| Qrr | 130–195 nC - Quantifies body diode reverse recovery burden in synchronous rectifier dead-time management |
Pinout & Package
PQFN 5×6 mm package with exposed thermal pad on bottom side; industry-standard 3-pin layout (Source, Drain, Gate) supporting dual-side cooling and high-current PCB routing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (D) | Main current path from input bus to load | Connected to internal die backside; electrically tied to exposed copper pad for thermal conduction |
| Source (S) | Reference node for gate drive and current sensing | Three parallel source bond wires minimize inductance; ties directly to PCB ground plane |
| Gate (G) | Control terminal for channel modulation | Low-impedance input (RG = 1.4 Ω) compatible with standard gate drivers; no internal pull-down |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 4.65 mΩ typ. at VGS = 10 V reduces I²R losses in high-current synchronous rectifiers |
| Low-profile package | 0.9 mm max height enables compact DC-DC module designs with strict Z-height constraints |
| 100 % RG tested | Ensures consistent gate drive timing and eliminates batch-to-batch switching variability |
| MSL1 rating | Enables single-reflow assembly without moisture sensitivity concerns or baking requirements |
| RoHS & halogen-free | Meets IPC-J-STD-609A Class 1 definition for bromine and chlorine content |
Applications
| Secondary-Side Synchronous Rectifier | DC-DC Brick Converter |
|---|---|
Use Scenario: High-density 48 V–12 V isolated DC-DC converter in data center power supplies. IC Role / Device Role / Timing Role: N-channel MOSFET replacing Schottky diode in secondary-side rectification leg, driven synchronously with primary-side PWM signal. Use Value: Reduces forward conduction loss by >50 % vs. 60 V Schottky, improving full-load efficiency from 92 % to 95.3 % at 100 A output. | Use Scenario: 300 W quarter-brick DC-DC module for industrial automation controllers. IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge topology operating at 300 kHz. Use Value: Low Qg/Qgd ratio minimizes Miller-induced shoot-through risk during hard commutation at elevated temperature. |
| Inverter for Brushless DC Motor | Boost Converter Stage |
Use Scenario: 24 V, 5 kW motor drive for electric pallet jack with regenerative braking. IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter bridge, conducting continuous 100 A with forced-air cooling. Use Value: RθJC(Bottom) ≤ 1.1 °C/W allows direct heatsink mounting via soldered thermal pad, eliminating TIM interface resistance. | Use Scenario: 12 V–48 V boost stage in solar microinverter front-end. IC Role / Device Role / Timing Role: Main switching FET handling 60 A peak inductor current at 100 kHz switching frequency. Use Value: 96 mJ single-pulse avalanche energy rating supports safe operation during line transients without external clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFH5206TRPBF | Same package, 60 V rating, but 3.7 mΩ RDS(on) typ. and 65 nC Qg | Better conduction loss at cost of higher gate drive loss and slower switching | Preferred when conduction loss dominates (e.g., <100 kHz operation), not for high-frequency sync rectification |
| SIHF5106T-E3 | TO-220AB package, identical 60 V/5.6 mΩ rating, but RθJA = 62 °C/W vs. 35 °C/W | Requires external heatsink; unsuitable for ultra-thin modules | Select only when legacy through-hole assembly or manual prototyping is required |
Compared with IRFH5106TRPBF, IRFH5206TRPBF trades higher gate charge for lower RDS(on), while SIHF5106T-E3 sacrifices thermal performance and board area for mechanical robustness and serviceability-making the original optimal for space-constrained, high-efficiency surface-mount power stages.
Availability
IRFH5106TRPBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick converters, and brushless DC motor inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for IRFH5106TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The IRFHxxx series belongs to Infineon's TrenchStop™ and StrongIRFET™ power MOSFET product lines, engineered specifically for high-current, high-efficiency DC-DC conversion and motor drive applications demanding low RDS(on), fast switching, and rugged avalanche capability.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
At TC(Bottom) = 100 °C, the IRFH5106TRPBF supports 17 A continuous drain current with VGS = 10 V, as defined in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN package under realistic PCB copper area and airflow conditions, not silicon capability alone.
Does this MOSFET require a gate resistor for stability?
Yes-a 5–10 Ω external gate resistor is recommended to dampen parasitic oscillation caused by trace inductance interacting with the device's 1.4 Ω intrinsic RG and 205 pF Crss. Layout-dependent ringing has been observed above 200 kHz without series gate resistance, especially in high-di/dt synchronous rectifier configurations.
Can IRFH5106TRPBF be used in avalanche mode repeatedly?
No-its 96 mJ single-pulse avalanche energy rating (EAS) applies only to non-repetitive, transient events. The datasheet does not specify repetitive avalanche SOA, and repeated unclamped inductive switching will cause cumulative junction degradation due to localized hot-spot formation and thermal runaway.
Is the body diode suitable for freewheeling in discontinuous conduction mode?
Yes-the body diode exhibits 1.3 V forward voltage at 50 A and 28–42 ns reverse recovery time (trr), making it viable for DCM flyback or LLC resonant converter freewheeling. However, its Qrr of 130–195 nC necessitates careful dead-time tuning to avoid cross-conduction losses in synchronous rectifier implementations.
IRFH5106TRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-PowerVDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 5.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 75 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3090 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.6W (Ta), 114W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-PQFN (5x6)
IRFH5106TRPBF FAQ
1.How can I place an order for IRFH5106TRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFH5106TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFH5106TRPBF reliable?
The price and inventory of IRFH5106TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5106TRPBF is usually 5 days.
3.What payment methods are accepted for IRFH5106TRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5106TRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFH5106TRPBF?
IRFH5106TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFH5106TRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFH5106TRPBF?
For technical support, including IRFH5106TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5106TRPBF requirements.
6.How does Aetrix verify that IRFH5106TRPBF is sourced from the original manufacturer or authorized distributors?
All IRFH5106TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5106TRPBF meets industry standards.
7.What is the process for return or replacement of IRFH5106TRPBF?
All IRFH5106TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5106TRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFH5106TRPBF part is unused and in its original packaging.
Return procedure for IRFH5106TRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IRFH5106TRPBF Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…
