Infineon Technologies IRFH5204TRPBF

Overview

IRFH5204TRPBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET Power MOSFET in a PQFN 5×6 mm package, rated for 40 V V_DS, 4.3 mΩ R_DS(on) at V_GS = 10 V, and 100 A continuous drain current at T_C(bottom) = 25°C. It is engineered for high-efficiency secondary-side synchronous rectification and DC-DC brick applications where low conduction loss and thermal resistance are critical.

For engineers reviewing the IRFH5204TRPBF datasheet, IRFH5204TRPBF pinout, IRFH5204TRPBF application, or IRFH5204TRPBF equivalent, key selection criteria include its 1.2°C/W junction-to-case (bottom) thermal resistance, 43 nC total gate charge, industry-standard pinout compatibility, RoHS-compliant PQFN packaging, and validated performance in high-current, high-frequency switching topologies.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(on) and fast switching with controlled Q_gd/Q_gs ratio (14 nC / 13.1 nC typical), enabling efficient operation in hard-switched and resonant converters. Its gate threshold voltage (2.0–4.0 V) and negative temperature coefficient of V_GS(th) (−9.3 mV/°C) support stable parallel operation.

The device integrates a robust body diode with 128–192 nC reverse recovery charge and 30–45 ns t_rr, verified under 50 A, 25 V conditions. Thermal design leverages direct bottom-side copper exposure for PCB heat spreading, supported by MSL1 rating and industrial qualification.

Key Specifications

Pinout & Package

PQFN 5×6 mm Outline "B" package with exposed thermal pad on bottom surface; 3-terminal configuration (Drain, Source, Gate) with industry-standard pinout: Pin 1 = Gate, Pins 2–5 & 7–10 = Source, Pin 6 = Drain (center pad).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPB040N04LGATMA1 and SISD10DN042X, IRFH5204TRPBF offers the best balance of ultra-low thermal resistance (1.2°C/W), industry-standard pinout, and proven reliability in high-volume synchronous rectifier deployments-making it preferred where PCB thermal design and manufacturing compatibility are primary constraints.

Availability

IRFH5204TRPBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, high-density DC-DC brick modules, and BLDC motor inverter stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for IRFH5204TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep expertise in silicon and wide-bandgap power devices.

This device belongs to Infineon's OptiMOS™ 5 family of low-voltage power MOSFETs, designed specifically for high-current, high-frequency switching in server, telecom, and industrial power conversion where efficiency, thermal performance, and reliability are non-negotiable.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance of IRFH5204TRPBF?

The PQFN 5×6 mm package requires a minimum 100 mm² exposed copper thermal pad connected to internal ground planes via ≥8 thermal vias (0.3 mm diameter, 0.8 mm pitch). Application Note AN-1136 specifies a recommended 12 mm × 12 mm copper pour with solder mask opening matching the die pad outline for ≤1.2°C/W R_θJC.

Does IRFH5204TRPBF support gate drive from 3.3 V microcontrollers?

No-its V_GS(th) range (2.0–4.0 V) and R_DS(on) specification require ≥4.5 V gate drive for guaranteed low-resistance conduction. At 3.3 V, R_DS(on) exceeds 15 mΩ, increasing conduction loss by >250%. A level-shifting gate driver or 5 V supply is mandatory for full performance.

How is avalanche ruggedness characterized for IRFH5204TRPBF?

It is rated for 102 mJ single-pulse avalanche energy at T_J = 25°C (E_AS), validated per JEDEC JESD24-1. The device sustains unclamped inductive switching up to I_AS = 50 A with V_DD = 40 V, making it suitable for flyback and active clamp forward converters without external snubbers.

Can IRFH5204TRPBF be paralleled with identical units without external gate resistors?

Yes-100% R_G testing ensures gate resistance matching within ±0.3 Ω, and its negative V_GS(th) temperature coefficient promotes current sharing. However, matched PCB layout (symmetrical gate traces, shared source star point) remains essential to avoid dynamic imbalance above 50 kHz.