Infineon Technologies IRFH5207TR2PBF

Overview

IRFH5207TR2PBF from Infineon Technologies is a 75 V, 71 A (T_C(Bottom) = 25°C), N-channel enhancement-mode HEXFET® Power MOSFET in PQFN 5×6 mm package with 9.6 mΩ R_DS(on) @ V_GS = 10 V, 40 nC total gate charge, and 1.2 °C/W junction-to-case (bottom) thermal resistance-designed for high-efficiency secondary-side synchronous rectification in DC-DC bricks and boost converters.

For engineers reviewing the IRFH5207TR2PBF datasheet, IRFH5207TR2PBF pinout, IRFH5207TR2PBF application, or IRFH5207TR2PBF equivalent, key selection criteria include low-profile thermal performance (<0.9 mm height), MSL1 industrial qualification, 100% R_G testing, and industry-standard pinout enabling multi-vendor compatibility in high-density power stages.

Technical Context

This device operates as a unidirectional, voltage-controlled power switch with a 75 V drain-source breakdown rating and gate threshold voltage of 2.0–4.0 V. Its low 9.6 mΩ on-resistance at 10 V gate drive enables high-current conduction with minimal I²R loss, while the 1.2 °C/W R_θJC(bottom) supports direct PCB heat spreading via exposed thermal pad.

The 40 nC total gate charge and 1.7 Ω gate resistance define switching speed and driver requirements; typical Q_gd = 12 nC and Q_sw = 15.8 nC indicate moderate Miller-effect sensitivity and fast turn-off capability suitable for 100–500 kHz DC-DC topologies.

Key Specifications

Pinout & Package

PQFN 5×6 mm package with exposed thermal pad on bottom surface; 8-terminal configuration optimized for high-current, low-inductance PCB layout. Pin 1 identifier located at top-left corner per tape orientation quadrant Q1.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL220N7F7AG and NTMFS5C673NL, IRFH5207TR2PBF offers balanced trade-offs: superior thermal dissipation (1.2 °C/W vs. ≥2.5 °C/W), robust 75 V rating, and optimized Q_g/R_DS(on) ratio for 200–500 kHz DC-DC and motor control.

Availability

IRFH5207TR2PBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, high-density DC-DC brick designs, and boost converter applications requiring stable component supply, MSL1 reliability, and low-profile thermal management.

Supply support for IRFH5207TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-current switching in compact power conversion systems where thermal density and switching loss are critical constraints.

FAQ

What is the maximum continuous drain current for IRFH5207TR2PBF at 100°C case temperature?

At T_C(Bottom) = 100°C, the maximum continuous drain current is 43 A. This value is derived from the device's thermal derating curve and 9.6 mΩ R_DS(on), ensuring safe operation without exceeding 150°C junction temperature under steady-state conditions with adequate PCB copper area.

Does IRFH5207TR2PBF include an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode with V_SD = 1.3 V (typical) at 43 A and T_J = 25°C, reverse recovery time t_rr = 26–39 ns, and Q_rr = 130–195 nC. These values enable efficient freewheeling in synchronous rectifier and H-bridge configurations without external diode supplementation.

Can IRFH5207TR2PBF be driven directly by a 3.3 V microcontroller GPIO?

No-its V_GS(th) range is 2.0–4.0 V, and full enhancement requires ≥10 V for specified R_DS(on). A 3.3 V signal may partially turn on the device, causing excessive heating. A dedicated gate driver (e.g., IR2110, TC4427) or level shifter is required for reliable switching.

What is the recommended PCB footprint and thermal pad layout for this PQFN 5×6 mm package?

The official Infineon AN-1136 recommends a 4.5 × 5.5 mm thermal pad with 0.3 mm solder mask opening, 8 × 0.3 mm thermal vias (0.3 mm diameter, filled or capped), and 0.4 mm trace width for source/drain connections. Stencil aperture should be 80% open area to prevent solder voiding under the exposed pad.