Infineon Technologies IRFH5207TRPBF

Overview

IRFH5207TRPBF from Infineon Technologies is a 75 V, 71 A (at T_C(Bottom) = 25°C), N-channel enhancement-mode HEXFET® Power MOSFET in PQFN 5×6 mm package with R_DS(on) ≤ 9.6 mΩ at V_GS = 10 V, Q_g = 40 nC, and R_θJC(Bottom) ≤ 1.2°C/W - designed for high-efficiency secondary-side synchronous rectification in DC-DC bricks and boost converters.

For engineers reviewing the IRFH5207TRPBF datasheet, IRFH5207TRPBF pinout, IRFH5207TRPBF application, or IRFH5207TRPBF equivalent, key selection criteria include low conduction loss (R_DS(on) ≤ 9.6 mΩ), fast switching (Q_gd = 12 nC, t_f = 7.1 ns), thermal performance (R_θJC(Bottom) ≤ 1.2°C/W), and industry-standard PQFN 5×6 pinout compatibility across multi-vendor designs.

Technical Context

This device operates as a unidirectional power switch with gate-controlled channel conduction, optimized for hard-switched and synchronous rectifier topologies. Its low R_DS(on) and low Q_gd/Q_sw ratio (12 nC / 15.8 nC) reduce switching losses and improve efficiency in high-frequency DC-DC conversion up to 1 MHz.

The integrated body diode exhibits V_SD = 1.3 V (typ.) at I_S = 43 A and t_rr = 26–39 ns, enabling reliable reverse recovery in synchronous rectification. Thermal design leverages direct bottom-side copper exposure for PCB-level heat extraction, supported by MSL1 rating and industrial temperature qualification (−55°C to +150°C).

Key Specifications

Pinout & Package

IRFH5207TRPBF uses the PQFN 5×6 mm Outline "B" package with exposed drain pad on the bottom surface and three perimeter terminals: Source (S), Drain (D), and Gate (G). The package features low-profile height (<0.9 mm) and MSL1 moisture sensitivity for lead-free reflow compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with SiR626DP and NTMFS4C09N, IRFH5207TRPBF offers balanced trade-off between conduction loss (9.6 mΩ), switching charge (40 nC), and thermal performance (1.2°C/W), making it especially suitable for space-constrained, high-current synchronous rectification where both efficiency and reliability under thermal stress are critical.

Availability

IRFH5207TRPBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, high-density DC-DC brick converters, and industrial motor inverters requiring stable component supply, long-term lifecycle support, and RoHS-compliant sourcing.

Supply support for IRFH5207TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-current, high-efficiency power conversion in telecom, server, industrial, and renewable energy systems where thermal density and switching speed are design constraints.

FAQ

What is the maximum continuous drain current for IRFH5207TRPBF at 100°C case temperature?

At T_C(Bottom) = 100°C, the maximum continuous drain current is 43 A with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN 5×6 package when mounted on standard 2-layer PCBs with 10–15 thermal vias per mm² under natural convection.

Does IRFH5207TRPBF require a gate resistor for stability?

Yes - a series gate resistor (typically 1–5 Ω) is recommended to dampen parasitic oscillation caused by gate loop inductance and Miller capacitance. The device's typical R_G of 1.7 Ω aids predictability, but external resistance remains necessary to control dV/dt and EMI in hard-switched applications above 100 kHz.

Can IRFH5207TRPBF be used in avalanche-rated circuits?

Yes - it is rated for single-pulse avalanche energy up to 350 mJ at I_AS = 43 A, validated per JEDEC JESD24-11. This supports unclamped inductive switching in motor drive half-bridges, but repetitive avalanche operation is not guaranteed and requires careful layout and thermal management to avoid junction overheating.

Is the PQFN 5×6 package of IRFH5207TRPBF compatible with standard reflow profiles?

Yes - the device is qualified to MSL1 per J-STD-020 and supports lead-free reflow with peak temperature up to 260°C. Recommended profile follows IPC/JEDEC J-STD-020D: ramp-to-peak ≤ 3°C/s, time above 217°C = 60–150 s, peak = 235–245°C for optimal solder joint integrity and minimal voiding under the thermal pad.