Infineon Technologies IRFH5210TR2PBF

Overview

IRFH5210TR2PBF from Infineon Technologies is a 100 V, 55 A (T_C(Bottom) = 25°C), N-channel enhancement-mode HEXFET® Power MOSFET in PQFN 5×6 mm package, featuring 14.9 mΩ R_DS(on) at V_GS = 10 V, 40 nC total gate charge, and 1.2 °C/W junction-to-case (bottom) thermal resistance - optimized for high-efficiency secondary-side synchronous rectification in DC-DC bricks and boost converters.

For engineers reviewing the IRFH5210TR2PBF datasheet, IRFH5210TR2PBF pinout, IRFH5210TR2PBF application, or IRFH5210TR2PBF equivalent, key selection criteria include verified R_DS(on) ≤14.9 mΩ at 10 V drive, low-profile 0.9 mm height enabling compact power stages, MSL1 industrial qualification, and industry-standard pinout ensuring multi-vendor board compatibility in high-current switching topologies.

Technical Context

This device operates as a unidirectional high-side or low-side switch in hard-switched and synchronous rectifier configurations. Its 100 V BVDSS rating supports 48 V input systems with margin, while the 1.7 Ω typical gate resistance and 40 nC Q_g enable predictable turn-on/turn-off timing with standard gate drivers (e.g., IR2110, UCC27531).

Thermal performance is defined by dual-path conduction: 1.2 °C/W R_θJC(bottom) to PCB via exposed drain pad, and 15 °C/W R_θJC(top) to heatsink. The body diode exhibits 1.3 V forward drop at 33 A and 29–44 ns reverse recovery time, supporting moderate-frequency freewheeling in non-resonant topologies.

Key Specifications

Pinout & Package

PQFN 5×6 mm package with exposed drain pad (pin 1 = Gate, pin 2 = Source, pin 3 = Source, pin 4 = Source, pin 5 = Drain, pin 6 = Drain, pin 7 = Drain, pin 8 = Drain). Bottom-side thermal pad connects directly to PCB ground plane for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP110N10T and SiR626DP, IRFH5210TR2PBF delivers optimal balance of low R_DS(on), moderate Q_g, and MSL1 reliability - making it preferred for production-grade surface-mount DC-DC bricks requiring zero-bake assembly and tight thermal management.

Availability

IRFH5210TR2PBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick converters, and boost converter applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for IRFH5210TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the HEXFET® Power MOSFET product line, engineered for high-current, high-efficiency switching in server power supplies, telecom infrastructure, and industrial motor drives.

FAQ

What is the maximum continuous drain current for IRFH5210TR2PBF at 100°C case temperature?

At T_C(Bottom) = 100°C, the maximum continuous drain current is 22 A with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PQFN 5×6 package under realistic PCB thermal conditions - not ambient temperature - and assumes adequate copper area and thermal vias beneath the exposed drain pad.

Does IRFH5210TR2PBF support 5 V gate drive?

No - the gate threshold voltage range is 2.0–4.0 V, but R_DS(on) is only guaranteed ≤14.9 mΩ at V_GS = 10 V. At 5 V, R_DS(on) rises significantly (typical ~35 mΩ), increasing conduction loss by >2×. It is not rated for logic-level 5 V operation and requires a 10 V gate driver for full performance.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has V_SD ≤1.3 V at 33 A and t_rr = 29–44 ns, which is slower and higher-drop than modern 40 V Schottky diodes (e.g., 0.55 V, <10 ns). However, in synchronous rectification, the body diode conducts only briefly during dead-time - its Q_rr (165–250 nC) is managed by controller timing, not replaced by external diodes.

Is IRFH5210TR2PBF suitable for avalanche-rated operation?

Yes - it is characterized for unclamped inductive switching with EAS = 86 mJ at I_AS = 33 A (T_J = 25°C). This rating supports limited avalanche energy handling during fault conditions, but the device is not intended for repetitive avalanche operation. Designers must verify single-pulse stress margins using Fig.13 and avoid sustained operation beyond SOA limits.