Infineon Technologies IRFH5215TR2PBF

Overview

IRFH5215TR2PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET Power MOSFET in a PQFN 5×6 mm package, rated for 150 V V_DS, 58 mΩ R_DS(on) @ V_GS = 10 V, and 27 A continuous drain current at T_C(bottom) = 25°C. It serves as a high-efficiency primary-side synchronous rectifier or DC-DC boost switch in industrial power converters.

For engineers reviewing the IRFH5215TR2PBF datasheet, IRFH5215TR2PBF pinout, IRFH5215TR2PBF application, or IRFH5215TR2PBF equivalent, key selection criteria include its 1.2°C/W junction-to-case (bottom) thermal resistance, 21 nC total gate charge, 150 V breakdown voltage, low-profile 0.9 mm height, and MSL1 industrial qualification-critical for high-density, thermally constrained DC-DC brick and motor inverter designs.

Technical Context

This device uses a trench-gated silicon process optimized for fast switching and low conduction loss in hard-switched topologies. Its gate threshold voltage (3.0–5.0 V) and negative temperature coefficient of V_GS(th) (−12 mV/°C) support stable parallel operation and predictable turn-on behavior across −55°C to +150°C junction range.

The integrated body diode exhibits 1.3 V forward voltage at 16 A and 40–60 ns reverse recovery time with 370–555 nC Q_rr, enabling efficient unclamped inductive switching in synchronous rectification where diode conduction is brief and controlled. Thermal design leverages direct bottom-side copper exposure for PCB heat spreading.

Key Specifications

Pinout & Package

PQFN 5×6 mm package with exposed thermal pad on bottom surface; 3-terminal configuration (Drain, Gate, Source) with industry-standard pinout for drop-in compatibility across multiple vendors.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STL130N10F7 and NTMFS5C673NL, IRFH5215TR2PBF uniquely balances 150 V rating, 58 mΩ on-resistance, and 0.9 mm profile-making it the only viable option among the three for space-constrained, medium-voltage synchronous rectifiers and boost stages where voltage margin and thermal density are co-critical.

Availability

IRFH5215TR2PBF is available at Aetrix Electronics and suitable for primary-side synchronous rectification, DC-DC brick converters, and boost converter applications requiring stable component supply, RoHS compliance, and MSL1 reflow robustness.

Supply support for IRFH5215TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This part belongs to Infineon's OptiMOS™ Trench 6 family of high-voltage power MOSFETs, engineered specifically for high-efficiency, high-power-density industrial switching power supplies and motor control systems.

FAQ

What is the maximum allowable PCB copper area for optimal thermal performance?

The PQFN 5×6 mm package requires ≥250 mm² of 2 oz copper on the bottom layer, connected via ≥9 thermal vias (0.3 mm diameter, 0.8 mm pitch) to inner ground planes. This achieves the specified 1.2°C/W R_θJC and supports 22 W continuous dissipation at T_C = 25°C per datasheet Figure 11.

Does IRFH5215TR2PBF support paralleling for higher current capacity?

Yes-its negative V_GS(th) temperature coefficient (−12 mV/°C) and matched R_DS(on) distribution enable stable current sharing. Use individual 2.2 Ω gate resistors and symmetrical layout with Kelvin source connections to minimize imbalance below ±5% at 50 A total load.

Can this MOSFET be driven directly by a 3.3 V microcontroller GPIO?

No-its minimum V_GS(th) is 3.0 V, but full enhancement requires ≥8 V for <58 mΩ R_DS(on). A 3.3 V signal yields >200 mΩ on-resistance and excessive heating. A level-shifting gate driver (e.g., IRS2007) or dedicated 10 V bias rail is mandatory.

Is the body diode suitable for continuous freewheeling conduction?

No-the body diode is rated for 16 A continuous source current only at T_J ≤ 125°C and must be operated with forced air or enhanced PCB cooling. For sustained freewheeling, use external Schottky clamping or synchronous rectification with complementary FET control to avoid thermal runaway.