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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5215TRPBF

Name: IRFH5215TRPBF
Brand: Infineon Technologies
SKU: IRFH5215TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5215TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-VQFN Exposed Pad

Datasheet:: IRFH5215TRPBF.pdf

Description:: MOSFET N-CH 150V 5A/27A PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:6,089

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Product details

Overview

IRFH5215TRPBF from Infineon Technologies (formerly International Rectifier) is a 150 V, 27 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized for high-efficiency synchronous rectification and DC-DC conversion. It delivers 45.5 mΩ typical R_DS(on) at V_GS = 10 V, 21 nC total gate charge, and 1.2 °C/W junction-to-case (bottom) thermal resistance-enabling compact, high-power-density designs in boost converters and motor inverters.

For engineers reviewing the IRFH5215TRPBF datasheet, IRFH5215TRPBF pinout, IRFH5215TRPBF application, or IRFH5215TRPBF equivalent, key selection criteria include verified 150 V breakdown voltage, low-profile 0.9 mm height, MSL1 industrial qualification, 100% R_G tested gate resistance, and compatibility with standard surface-mount assembly processes.

Technical Context

This device operates as a unidirectional power switch with an integrated body diode, supporting hard-switched and synchronous rectifier topologies. Its 150 V BVDSS rating and 0.19 V/°C temperature coefficient ensure stable operation across industrial temperature ranges (–55 °C to +150 °C), while the 2.3 Ω typical gate resistance enables predictable turn-on/turn-off timing under 10 V drive.

The PQFN 5×6 mm package features exposed bottom thermal pad for direct PCB heat transfer, achieving 1.2 °C/W R_θJC(bottom), and uses industry-standard pinout (G–D–S–D–S) for multi-vendor layout reuse. Gate threshold voltage is specified between 3.0 V and 5.0 V, ensuring robust noise immunity in noisy power systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Max	150 V - supports primary-side switching in 48 V–100 V bus systems without derating
R_DS(on) Typ @ 10 V	45.5 mΩ - reduces conduction loss to ≤0.7 W at 40 A peak in continuous 27 A operation
Q_g Typ	21 nC - enables <12 ns turn-on delay with 2 A gate driver, minimizing switching loss
I_D @ T_C(Bottom) = 25°C	27 A - defines maximum continuous current when mounted on 2-layer 2 oz Cu PCB with thermal pad
R_θJC(Bottom)	1.2 °C/W - allows >20 W dissipation before exceeding 125 °C junction temperature
V_GS(th) Range	3.0–5.0 V - ensures reliable turn-on with 3.3 V logic-level controllers using gate boosting
C_iss	1350 pF - determines Miller effect magnitude and gate drive energy requirement

Pinout & Package

IRFH5215TRPBF is housed in a thermally enhanced PQFN 5 mm × 6 mm package with 0.9 mm profile and exposed bottom thermal pad. The package complies with MSL1 and supports reflow soldering per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≥10 V for full enhancement; 2.3 Ω internal gate resistance limits dv/dt-induced ringing
2 (D)	Drain	Main high-side power path; connected to internal die backside and exposed top metal area
3 (S)	Source	Reference node for gate drive; tied to PCB ground plane via multiple internal vias
4 (D)	Drain	Parallel drain connection to reduce current density and package inductance
5 (S)	Source	Secondary source terminal for Kelvin sensing or low-inductance return path

Key Features

Feature	Design Value
Low R_DS(on)	45.5 mΩ typ. at 10 V - directly enables >96% efficiency in 12 V–48 V synchronous buck stages
Low-profile PQFN	0.9 mm height - permits integration into space-constrained DC-DC bricks and embedded motor drives
100% R_G tested	Guaranteed 2.3 Ω ±15% - eliminates gate oscillation risk without external gate resistor in most layouts
MSL1 qualification	Unlimited floor life at ≤30 °C/60% RH - eliminates bake requirements pre-reflow
Industry-standard pinout	G–D–S–D–S layout - enables drop-in replacement of competing 5×6 mm MOSFETs without PCB redesign

Applications

Primary-Side Synchronous Rectification

Inverter for DC Motors

Use Scenario: Used as secondary-side switch in isolated flyback or forward converters operating at 100–500 kHz.

IC Role / Device Role / Timing Role: Replaces output Schottky diode to reduce forward voltage drop and conduction loss.

Use Value: Achieves 2–3% system efficiency gain over 40 V Schottky diodes at 12 A load due to 45.5 mΩ R_DS(on).

Use Scenario: High-side switch in 24–48 V brushed DC motor H-bridge drivers.

IC Role / Device Role / Timing Role: Controls motor direction and braking via PWM-driven high-side conduction.

Use Value: Supports 27 A continuous current at 70 °C case temperature, enabling 500 W motor drive without heatsink.

DC-DC Brick Converter

Boost Converter Stage

Use Scenario: Output switch in 36–72 V input, 12 V output half-bridge DC-DC bricks.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in secondary-side center-tapped topology.

Use Value: 1.2 °C/W R_θJC allows 20 W dissipation on 2-layer PCB, eliminating need for external thermal interface material.

Use Scenario: Main switching element in 24 V input, 48 V output telecom boost converters.

IC Role / Device Role / Timing Role: High-current, high-voltage switch handling up to 16 A peak inductor current.

Use Value: 150 V BVDSS margin accommodates 40 V transient spikes without avalanche stress during line surges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB120N15N3 G	150 V, 120 A, TO-263 package; R_DS(on) = 9.5 mΩ; 5.5 mm height	Higher current, larger footprint, higher thermal mass - suited for >50 A continuous designs	Select when board space allows TO-263 and >100 A peak current is required
SUD15N15-45	150 V, 15 A, SO-8 package; R_DS(on) = 45 mΩ; 1.75 mm height	Lower current rating, no exposed thermal pad - limited to <10 W dissipation	Choose only for low-power prototypes or space-constrained non-thermal-critical layouts

Compared with IPB120N15N3 G and SUD15N15-45, IRFH5215TRPBF uniquely balances 27 A current capability, 0.9 mm profile, and 1.2 °C/W thermal resistance-making it optimal for high-density, medium-power DC-DC modules where both size and thermal performance are constrained.

Availability

IRFH5215TRPBF is available at Aetrix Electronics and suitable for primary-side synchronous rectification, DC-DC brick converters, and boost converter applications requiring stable component supply, industrial-grade reliability, and RoHS-compliant manufacturing.

Supply support for IRFH5215TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRFH5215TRPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in space- and thermally-constrained industrial and telecom infrastructure.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IRFH5215TRPBF supports 150 A pulsed drain current (I_DM) but its continuous drain current at T_C(bottom) = 100 °C is rated at 10.8 A per the absolute maximum ratings table. This value reflects thermal limits under real PCB mounting conditions-not ambient temperature derating-and assumes full thermal pad soldering to a 2-layer, 2 oz copper board.

Does this MOSFET require a gate resistor for stability?

No external gate resistor is required for basic stability because the device undergoes 100% R_G testing and has a guaranteed 2.3 Ω internal gate resistance. However, a small series resistor (≤5 Ω) is recommended in high-dv/dt environments (e.g., >50 V/ns) to dampen potential gate ringing caused by PCB trace inductance interacting with C_iss and C_rss.

Can IRFH5215TRPBF be used in avalanche-rated circuits?

Yes-it is characterized for unclamped inductive switching with E_AS = 350 mJ at I_AS = 16 A and T_J = 25 °C. Avalanche energy decreases linearly with junction temperature; at 125 °C, E_AS drops to ~180 mJ. Designers must verify single-pulse energy within the SOA curve and avoid repetitive avalanche unless explicitly qualified per application note AN-1001.

Is the body diode suitable for reverse recovery in synchronous rectification?

The integrated body diode has t_rr = 40–60 ns and Q_rr = 370–555 nC at I_F = 16 A, making it viable for moderate-frequency synchronous rectification (≤300 kHz). For higher frequencies or zero-voltage switching, external Schottky or GaN-based solutions may reduce recovery loss-but the diode's soft recovery characteristic minimizes voltage overshoot during commutation.

IRFH5215TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-VQFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta), 27A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 58mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 32 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1350 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6)

IRFH5215TRPBF FAQ

1.How can I place an order for IRFH5215TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5215TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5215TRPBF reliable?

The price and inventory of IRFH5215TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5215TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH5215TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5215TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5215TRPBF?

IRFH5215TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5215TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5215TRPBF?

For technical support, including IRFH5215TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5215TRPBF requirements.

6.How does Aetrix verify that IRFH5215TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH5215TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5215TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH5215TRPBF?

All IRFH5215TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5215TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5215TRPBF part is unused and in its original packaging.

Return procedure for IRFH5215TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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