Infineon Technologies IRFH5220TR2PBF

Overview

IRFH5220TR2PBF from Infineon Technologies (formerly International Rectifier) is a 200 V, 20 A N-channel enhancement-mode HEXFET® Power MOSFET in a PQFN 5×6 mm package with 99.9 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency secondary-side synchronous rectification and DC-DC brick applications.

For engineers reviewing the IRFH5220TR2PBF datasheet, IRFH5220TR2PBF pinout, IRFH5220TR2PBF application, or IRFH5220TR2PBF equivalent, key selection criteria include its low 1.2°C/W junction-to-case (bottom) thermal resistance, 20 nC typical gate charge, 2.3 Ω gate resistance, 100% R_G tested screening, and MSL1 industrial qualification for reliable surface-mount manufacturing.

Technical Context

This MOSFET employs a trench-gated silicon process to achieve low conduction loss and fast switching performance. Its 200 V BVDSS rating supports operation in boost converters and motor inverters up to 160 V bus voltage, while the 80 mΩ typical R_DS(on) ensures minimal I²R loss at 5.8 A continuous drain current under TJ = 25°C conditions.

The device integrates a robust body diode with 39–59 ns reverse recovery time and 355–530 nC Q_rr, enabling efficient unclamped inductive switching. Gate drive characteristics-including 7.2 ns turn-on delay, 4.7 ns rise time, and 14 ns turn-off delay-are specified with RG = 1.8 Ω and V_DD = 100 V, supporting high-frequency (>500 kHz) power conversion topologies.

Key Specifications

Pinout & Package

PQFN 5×6 mm outline "B" package with exposed thermal pad on bottom side; 3-pin configuration (Source, Drain, Gate) with industry-standard pinout and solderable top-side terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Compared with IRFH5220TRPBF, the TR2PBF offers identical electrical performance in a smaller reel format ideal for engineering validation; versus STL220N5LF8AG, it trades 27× higher R_DS(on) for 60% smaller footprint and proven compatibility with existing 5×6 mm layout footprints.

Availability

IRFH5220TR2PBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick converters, and boost converter designs requiring stable component supply, RoHS compliance, and MSL1 handling assurance.

Supply support for IRFH5220TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon-based power devices and wide-bandgap technologies.

The IRFH5220TR2PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-efficiency DC-DC conversion in space-constrained industrial and telecom power systems.

FAQ

What is the maximum continuous drain current at case temperature of 100°C?

The IRFH5220TR2PBF supports 3.7 A continuous drain current when the bottom-side case temperature reaches 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PQFN 5×6 mm package under natural convection; forced airflow or copper thermal vias can improve this value by up to 40%.

Does this MOSFET require a negative gate turn-off voltage?

No. The IRFH5220TR2PBF has a gate threshold voltage range of 3.0–5.0 V and is fully enhanced at V_GS = 10 V. While a small negative bias (e.g., –2 V) improves noise immunity in high-dV/dt environments, it is not required for reliable turn-off-standard 0 V gate drive suffices per datasheet test conditions.

Can the body diode be used for freewheeling in hard-switched topologies?

Yes-the integrated body diode is characterized with t_rr = 39–59 ns and Q_rr = 355–530 nC at I_F = 5.8 A, making it suitable for freewheeling in non-resonant buck or flyback converters below 200 kHz. However, for ZVS or high-frequency SR, external Schottky clamping is recommended to minimize recovery loss.

Is the PQFN 5×6 mm package compatible with standard reflow profiles?

Yes. As an MSL1-rated component, the IRFH5220TR2PBF is qualified for standard lead-free reflow profiles (peak 260°C, 20–40 sec above 217°C) without baking. Its low-profile (≤0.9 mm) construction and exposed thermal pad require Type 3 or 4 solder paste and stencil aperture design matching Infineon's recommended land pattern (PQFN Outline "B" Rev. D).