Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5250DTR2PBF

Name: IRFH5250DTR2PBF
Brand: Infineon Technologies
SKU: IRFH5250DTR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IRFH5250DTR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH5250DTR2PBF.pdf

Description:: MOSFET N-CH 25V 40A 8VQFN

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,631

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IRFH5250DTR2PBF from Infineon Technologies is a 25 V, 100 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package with 1.4 mΩ R_DS(on) @ V_GS = 10 V, 27 ns typical reverse recovery time (t_rr), and integrated Schottky-like body diode. It serves as the synchronous rectifier MOSFET in high-frequency buck converters for server VRMs and GPU power stages.

For engineers reviewing the IRFH5250DTR2PBF datasheet, IRFH5250DTR2PBF pinout, IRFH5250DTR2PBF application, or IRFH5250DTR2PBF equivalent, key selection criteria include low-conduction-loss capability (R_DS(on) ≤ 1.4 mΩ), fast switching performance (Q_gd = 12 nC, t_r = 72 ns), thermal resistance to mounting base (R_θJC-mb = 0.5 °C/W), and industry-standard PQFN 5×6 pinout compatibility.

Technical Context

This device employs trench-gate silicon process technology optimized for high-current, high-switching-frequency DC-DC conversion. Its low gate charge (Q_g = 83 nC) and minimized Q_gd/Q_g ratio support efficient zero-voltage switching (ZVS) operation in synchronous buck topologies.

The intrinsic body diode exhibits low forward voltage (V_SD = 0.6 V @ I_S = 5.0 A) and fast reverse recovery (t_rr = 27 ns typ.), enabling reduced dead-time losses and improved light-load efficiency without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	25 V - Rated for 12 V input bus systems with margin against transient overvoltage in server/GPU VRMs.
R_DS(on) max @ V_GS = 10 V	1.4 mΩ - Enables <1.4 W conduction loss at 50 A, critical for high-efficiency 48 V–1 V conversion stages.
I_D @ T_mb = 25°C	100 A - Supports high-current single-phase or multiphase VRM phases without parallel devices.
t_rr typ.	27 ns - Reduces diode recovery-related switching loss and EMI in >500 kHz buck converters.
R_θJC-mb typ.	0.5 °C/W - Allows direct thermal coupling to PCB copper pour, enabling >100 W power dissipation with standard 2 oz Cu layout.
Q_gd	12 nC - Low gate-drain charge minimizes Miller-induced turn-off delay and improves controllability under high dv/dt.
V_SD max @ I_S = 5.0 A	0.6 V - Limits body diode conduction loss during synchronous rectifier dead time, improving light-load efficiency.

Pinout & Package

PQFN 5×6 mm (Outline "B") package with exposed thermal pad on bottom side; surface-mount, leadless design compliant with MSL1 and RoHS.

Pin/Terminal	Circuit Role	Design Meaning
Source (S)	Power return path for drain current; tied to PCB ground plane via multiple thermal vias.	Low-inductance source connection essential for minimizing shoot-through risk and improving switching stability.
Drain (D)	Main power output node; connected to output inductor and load capacitance.	Exposed drain paddle forms primary thermal interface to PCB; requires full-solder coverage for R_θJC-mb spec compliance.
Gate (G)	Control terminal for channel modulation; driven by dedicated gate driver IC.	Low gate threshold (V_GS(th) = 1.35–2.35 V) enables 3.3 V or 5 V logic-level drive without level-shifting.

Key Features

Feature	Design Value
Low R_DS(on) (<1.4 mΩ)	Reduces I²R conduction loss by >30% vs. legacy 3.0 mΩ MOSFETs at 50 A, directly increasing VRM efficiency at full load.
Schottky-like intrinsic diode	V_SD = 0.6 V @ 5 A enables near-zero reverse recovery charge (Q_rr = 51 nC typ.), eliminating need for external diode clamping.
Low-profile PQFN (0.9 mm max height)	Enables compact, low-inductance power stage layouts in space-constrained GPU and ASIC modules.
100% R_g tested	Ensures consistent gate resistance (R_g = 1.4 Ω typ.) across production lots, critical for predictable switching timing and EMI behavior.
Industry-standard pinout	Direct drop-in replacement for competing 5×6 PQFN MOSFETs (e.g., Vishay SiR626DP, ON Semi NTMFS5C676N), simplifying BOM consolidation.

Applications

Server Voltage Regulator Modules (VRMs)

GPU Power Delivery Stages

Use Scenario: High-current, multi-phase buck converter supplying 0.8–1.2 V to CPU/GPU cores at up to 600 A per rail.

IC Role / Device Role / Timing Role: Synchronous rectifier MOSFET operating at 500–1000 kHz switching frequency with precise dead-time control.

Use Value: 1.4 mΩ R_DS(on) and 27 ns t_rr reduce total power loss by ~1.8 W per phase versus 2.2 mΩ alternatives, lowering thermal design complexity.

Use Scenario: Point-of-load regulator on graphics card PCB delivering dynamic 0.9–1.3 V to GDDR6X memory and compute units.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck topology with tight layout constraints and aggressive thermal targets.

Use Value: 0.5 °C/W R_θJC-mb allows >90 W dissipation using only 4-layer PCB with internal copper planes-no heatsink required.

AI Accelerator Board Power Rails

High-Density Telecom DC-DC Converters

Use Scenario: Compact 48 V–0.75 V conversion for AI inference accelerators requiring >400 A peak current in <50 mm² footprint.

IC Role / Device Role / Timing Role: Primary low-side MOSFET in 3-phase stacked inductor design with integrated driver feedback loop.

Use Value: PQFN 5×6 pinout and 0.9 mm profile enable vertical stacking of power stages, achieving >120 A/cm² power density.

Use Scenario: 48 V input, 12 V output intermediate bus converter in 1RU telecom chassis with strict airflow and thermal limits.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in phase-shifted full-bridge topology operating at 300 kHz.

Use Value: Fast t_rr (27 ns) and low Q_gd (12 nC) minimize switching loss and improve ZVS window, boosting efficiency from 93.2% to 94.7% at 50% load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-frequency synchronous rectifier applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Vishay SiR626DP	R_DS(on) = 1.6 mΩ @ 10 V; Q_gd = 14 nC; t_rr = 32 ns	Higher conduction and switching loss at >400 kHz; requires larger gate driver current.	Preferred where cost sensitivity outweighs 0.5% efficiency gain and thermal margin is ample.
ON Semiconductor NTMFS5C676N	R_DS(on) = 1.3 mΩ @ 10 V; Q_gd = 10.5 nC; t_rr = 25 ns; R_θJC-mb = 0.65 °C/W	Slightly faster switching but higher thermal resistance reduces usable current in thermally constrained layouts.	Better for ultra-high-frequency (>1 MHz) designs where Q_gd dominates loss, provided PCB thermal design supports 0.65 °C/W.

Compared with SiR626DP and NTMFS5C676N, IRFH5250DTR2PBF delivers optimal balance of ultra-low R_DS(on), fast t_rr, and best-in-class thermal resistance-making it the preferred choice for thermally dense, high-current VRMs where both efficiency and reliability are co-constrained.

Availability

IRFH5250DTR2PBF is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery stages, AI accelerator board power rails, and high-density telecom DC-DC converters requiring stable component supply and long-term industrial qualification.

Supply support for IRFH5250DTR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This MOSFET belongs to Infineon's TrenchStop™ and OptiMOS™-derived HEXFET family, engineered specifically for high-efficiency, high-frequency DC-DC conversion in datacenter and AI infrastructure applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFH5250DTR2PBF supports 40 A continuous drain current at T_mb = 100°C, as specified in the Absolute Maximum Ratings table. This value assumes proper PCB thermal design with ≥4 thermal vias under the exposed drain pad and ≥2 oz copper on inner layers. Derating is linear beyond 100°C case temperature at 0.029 W/°C.

Does this MOSFET require a gate resistor for stability in high-speed switching?

Yes-a gate resistor (R_g) of 1–3 Ω is recommended to dampen ringing and prevent parasitic oscillation during hard switching. The device's measured R_g is 1.4 Ω (typical), so an external 1.5 Ω resistor provides optimal trade-off between switching speed and gate drive robustness in 500–1000 kHz buck converters.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes-the intrinsic body diode has t_rr = 27 ns (typical) and Q_rr = 51 nC (typical) at I_S = 50 A, making it fully suitable for synchronous rectification in buck converters up to 1 MHz. Its low V_SD (0.6 V) further minimizes dead-time conduction loss without requiring external diode clamping.

What is the moisture sensitivity level and reflow profile compliance?

The IRFH5250DTR2PBF is rated MSL1 per J-STD-020, meaning it is not moisture-sensitive and can undergo unlimited floor life and standard Pb-free reflow profiles (peak 260°C, 20–40 sec above 217°C) without baking. Its PQFN 5×6 package passes IPC/JEDEC J-STD-020D.1 qualification testing for industrial temperature range (-55°C to +150°C).

IRFH5250DTR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 25 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 1.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 83 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 6115 pF @ 13 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH5250DTR2PBF FAQ

1.How can I place an order for IRFH5250DTR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5250DTR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5250DTR2PBF reliable?

The price and inventory of IRFH5250DTR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5250DTR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH5250DTR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5250DTR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5250DTR2PBF?

IRFH5250DTR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5250DTR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5250DTR2PBF?

For technical support, including IRFH5250DTR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5250DTR2PBF requirements.

6.How does Aetrix verify that IRFH5250DTR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH5250DTR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5250DTR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH5250DTR2PBF?

All IRFH5250DTR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5250DTR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5250DTR2PBF part is unused and in its original packaging.

Return procedure for IRFH5250DTR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…