Infineon Technologies IRFH5250TR2PBF

Overview

IRFH5250TR2PBF from Infineon Technologies is a 25 V, 300 A (T_C(Bottom) = 25°C) N-channel Trench MOSFET in PQFN 5 mm × 6 mm package, optimized for high-current OR-ing and in-rush current control in 12 V bus systems. It delivers 0.9 mΩ typical R_DS(on) at V_GS = 10 V, 52 nC typical Q_g, 1.3 Ω typical gate resistance, and 0.5 °C/W typical junction-to-case (bottom) thermal resistance.

For engineers reviewing the IRFH5250TR2PBF datasheet, IRFH5250TR2PBF pinout, IRFH5250TR2PBF application, or IRFH5250TR2PBF equivalent, key selection criteria include low-conduction-loss operation at >200 A continuous drain current, ultra-low thermal resistance to PCB, industry-standard pinout compatibility, and validated avalanche energy rating of 468 mJ under unclamped inductive switching.

Technical Context

This device implements a high-density Trench-based silicon process with integrated body diode optimized for fast, low-loss reverse recovery (t_rr = 37 ns typ., Q_rr = 68 nC typ.). Its gate structure supports robust 4.5 V and 10 V drive, with V_GS(th) tightly distributed between 1.35 V and 2.35 V and negative temperature coefficient (−6.3 mV/°C).

The PQFN 5×6 mm package features dual-side thermal interface: bottom-side copper-exposed die pad for direct PCB heat sinking (R_θJC(bottom) = 0.5 °C/W typ.) and top-side thermal path limited to 15 °C/W max. It is MSL1 qualified and RoHS-compliant with halogen-free construction.

Key Specifications

Pinout & Package

PQFN 5 mm × 6 mm package with exposed thermal pad on bottom side and three main terminals: Drain (D), Source (S), and Gate (G). The package uses industry-standard pinout compatible with multi-vendor 5×6 mm MOSFET footprints and supports automated optical inspection per AN-1154.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IXTH30N25L2 and SiR626DP, IRFH5250TR2PBF uniquely combines 300 A continuous current capability, 0.5 °C/W thermal resistance, and 468 mJ avalanche rating in a surface-mount PQFN package-enabling higher power density and improved reliability in space-constrained 12 V bus systems.

Availability

IRFH5250TR2PBF is available at Aetrix Electronics and suitable for OR-ing power path control, battery-powered motor inverters, in-rush current limiting, and high-density point-of-load converters requiring stable component supply and long-term industrial availability.

Supply support for IRFH5250TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in high-performance MOSFETs and SiC devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for ultra-low R_DS(on) and high-current switching in 12–48 V power conversion, OR-ing, and motor drive applications.

FAQ

What is the maximum continuous drain current for IRFH5250TR2PBF at 100°C case temperature?

The maximum continuous drain current is 190 A when the bottom-side case temperature (T_C(Bottom)) is maintained at 100°C, as specified in the Absolute Maximum Ratings table. This value reflects derating due to thermal resistance and safe operating area constraints-not ambient temperature ratings.

Does IRFH5250TR2PBF support 4.5 V gate drive in practical applications?

Yes-R_DS(on) is specified at 1.4 mΩ max with V_GS = 4.5 V and I_D = 50 A, and V_GS(th) ranges from 1.35 V to 2.35 V. Combined with 52 nC total gate charge, it is fully compatible with 3.3 V and 5 V logic-level gate drivers in hard-switched topologies.

How does the PQFN 5×6 mm package improve thermal performance compared to SO-8 or DPAK?

The PQFN 5×6 mm exposes the MOSFET die pad directly to the PCB, achieving 0.5 °C/W typical junction-to-case (bottom) thermal resistance-over 5× better than SO-8 (≈3.0 °C/W) and 3× better than DPAK (≈1.6 °C/W)-enabling higher power handling without external heatsinks.

Is IRFH5250TR2PBF suitable for synchronous rectification in high-frequency DC-DC converters?

Yes-its 36 nC Q_oss, 52 nC Q_g, and 828 pF C_rss support efficient ZVS operation up to 500 kHz. The fast body diode (t_rr = 37 ns, Q_rr = 68 nC) minimizes reverse recovery loss, making it suitable for secondary-side synchronous rectification in isolated converters.