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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5300TR2PBF

Name: IRFH5300TR2PBF
Brand: Infineon Technologies
SKU: IRFH5300TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5300TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH5300TR2PBF.pdf

Description:: MOSFET N-CH 30V 40A PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:4,545

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Product details

Overview

IRFH5300TR2PBF from Infineon Technologies is a 30 V, 336 A (at T_C(Bottom) = 25°C) N-channel Trench MOSFET in PQFN 5 mm × 6 mm package, optimized for high-current OR-ing and in-rush current limiting in 12 V bus systems, featuring 1.1 mΩ typical R_DS(on) at V_GS = 10 V and 1.3 Ω typical gate resistance.

For engineers reviewing the IRFH5300TR2PBF datasheet, IRFH5300TR2PBF pinout, IRFH5300TR2PBF application, or IRFH5300TR2PBF equivalent, key selection criteria include low thermal resistance to PCB (<0.5°C/W), 100% R_g testing, MSL1 rating, and industry-standard pinout compatibility across multi-vendor designs.

Technical Context

This device uses Infineon's HEXFET® Trench technology to achieve ultra-low R_DS(on) and high pulsed current capability (I_DM = 1344 A). Its PQFN 5×6 mm package enables direct bottom-side thermal transfer to PCB, with R_θJC(Bottom) ≤ 0.5°C/W and height < 0.9 mm.

The MOSFET supports fast switching with Q_g = 50 nC (typ), Q_gd = 16 nC, and t_f = 13 ns (typ), while its body diode exhibits V_SD ≤ 1.0 V at I_S = 50 A and t_rr = 34–51 ns under specified conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V bus OR-ing and motor inverter applications
R_DS(on) max @ V_GS = 10 V	1.4 mΩ - Enables <1.5 W conduction loss at 300 A continuous drain current
I_D @ T_C(Bottom) = 25°C	336 A - Sustains high-current operation when mounted on thermally enhanced PCBs
Q_g (typ)	50 nC - Supports efficient gate drive with moderate power FET drivers (e.g., IR2110, UCC27531)
R_θJC(Bottom)	≤ 0.5°C/W - Allows >200 W dissipation with ≤100°C junction-to-PCB temperature rise
t_f (typ)	13 ns - Minimizes switching losses in high-frequency synchronous rectification (≥200 kHz)
V_SD max	1.0 V @ I_S = 50 A - Limits forward conduction loss in bidirectional current paths

Pinout & Package

PQFN 5 mm × 6 mm (Outline "B") package with exposed thermal pad on bottom side; 3-terminal configuration (Drain, Source, Gate) arranged in standard industry pinout for drop-in compatibility with competing 30 V high-current MOSFETs.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal connected to internal die substrate	Electrically tied to exposed copper pad; primary thermal path to PCB ground plane
Source (S)	Reference node for gate control and current return path	Connected to multiple peripheral pads; forms low-inductance source loop with gate driver
Gate (G)	Control electrode modulating channel conductivity	Isolated input requiring <50 nC charge; sensitive to ESD (±20 V absolute max)

Key Features

Feature	Design Value
Low R_DS(on) (<1.4 mΩ)	Reduces conduction loss by >40% vs. legacy 30 V SO-8 MOSFETs at 200 A load
R_θJC(Bottom) ≤ 0.5°C/W	Enables >250 W continuous power handling without heatsink on 2 oz Cu PCB
100% R_g tested	Guarantees gate resistance within 1.3 ±0.2 Ω, ensuring consistent turn-on timing across production lots
MSL1, Industrial qualification	Supports lead-free reflow (peak 260°C) and long-term reliability in automotive-grade environments
Industry-standard pinout	Direct replacement for IRFH5200, SiR626DP, and CSD18540Q5B in existing layouts

Applications

OR-ing Power Path

In-Rush Current Limiting

Use Scenario: Dual 12 V supply redundancy in telecom shelf power distribution, where back-to-back MOSFETs prevent reverse current flow during hot-swap events.

IC Role / Device Role / Timing Role: N-channel OR-ing switch operating in linear mode during turn-on, then fully enhanced for minimal voltage drop.

Use Value: Achieves <15 mV dropout at 300 A due to 1.1 mΩ R_DS(on), reducing heat generation by >60% vs. Schottky diodes.

Use Scenario: Controlled ramp-up of 12 V bus capacitance (≥10,000 µF) in server PSUs to avoid fuse blowing and connector arcing.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) series switch driven by analog current-limit circuitry.

Use Value: Handles 1344 A pulsed current (I_DM) without avalanche failure, enabling robust soft-start design.

Battery-Powered Motor Inverter

High-Density DC-DC Converter

Use Scenario: Half-bridge leg in 12 V BLDC motor drives for industrial AGVs, requiring bidirectional current handling and fast freewheeling.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting reverse recovery current during PWM dead-time.

Use Value: 34 ns t_rr and 68 nC Q_rr minimize shoot-through risk and reduce snubber losses.

Use Scenario: Synchronous rectifier in 48 V → 12 V isolated DC-DC modules for data center power shelves.

IC Role / Device Role / Timing Role: Secondary-side power FET operating at 300–500 kHz with low Q_g/Q_oss ratio for ZVS compatibility.

Use Value: 50 nC Q_g and 1360 pF C_oss support efficient zero-voltage switching below 100 ns dead time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5200TR2PBF	R_DS(on) max = 1.7 mΩ @ 10 V; same PQFN 5×6 package and pinout	Lower current rating (280 A @ T_C = 25°C); reduced thermal margin in high-power OR-ing	Select when system peak current ≤ 250 A and cost sensitivity outweighs 15% R_DS(on) penalty
CSD18540Q5B	R_DS(on) max = 1.6 mΩ @ 10 V; slightly higher Q_g (55 nC); TI NexFET™ process	Same footprint but different thermal pad layout; requires updated stencil design per AN-1136	Choose for TI ecosystem integration or where gate drive voltage tolerance >4.5 V is required

Compared with IRFH5200TR2PBF and CSD18540Q5B, IRFH5300TR2PBF delivers the lowest R_DS(on) and highest continuous current rating in the PQFN 5×6 form factor, making it optimal for thermally constrained, high-efficiency 12 V bus architectures where <1.5 mΩ on-resistance directly translates to measurable board-level thermal relief.

Availability

IRFH5300TR2PBF is available at Aetrix Electronics and suitable for OR-ing power paths, in-rush current limiting, battery-powered motor inverters, and high-density DC-DC converters requiring stable component supply and long-lifecycle support.

Supply support for IRFH5300TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The IRFH5300 belongs to Infineon's HEXFET® Trench MOSFET product line, engineered specifically for high-current, low-voltage DC power systems where thermal performance, switching efficiency, and board-level reliability are critical.

FAQ

What is the maximum continuous drain current for IRFH5300TR2PBF at 100°C case temperature?

The maximum continuous drain current is 212 A when the bottom-side case temperature (T_C(Bottom)) is maintained at 100°C, as specified in the Absolute Maximum Ratings table. This value reflects derating due to thermal resistance and must be validated with actual PCB thermal design using R_θJC(Bottom) ≤ 0.5°C/W.

Does IRFH5300TR2PBF require a gate resistor for stability?

Yes - a gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent spurious turn-on. The device's 1.3 Ω typical R_g is internal; external R_G controls dV/dt and EMI, especially in hard-switched topologies above 100 kHz.

Can IRFH5300TR2PBF be used in avalanche mode?

Yes - it is rated for single-pulse avalanche energy up to 420 mJ (E_AS) at T_J = 25°C. However, repetitive avalanche operation is not characterized or guaranteed; design should avoid sustained avalanche by proper snubbing and layout to limit dI/dt and V_DS overshoot.

Is the PQFN 5×6 package of IRFH5300TR2PBF compatible with standard reflow profiles?

Yes - it is MSL1 rated and qualified for lead-free reflow with peak temperature up to 260°C. Recommended profile follows IPC/JEDEC J-STD-020D: ramp-to-peak ≤ 3°C/s, time above 217°C = 60–150 s, peak = 235–260°C, and cooling rate ≤ 6°C/s.

IRFH5300TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 40A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 1.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 7200 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6) Single Die

IRFH5300TR2PBF FAQ

1.How can I place an order for IRFH5300TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5300TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5300TR2PBF reliable?

The price and inventory of IRFH5300TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5300TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH5300TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5300TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5300TR2PBF?

IRFH5300TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5300TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5300TR2PBF?

For technical support, including IRFH5300TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5300TR2PBF requirements.

6.How does Aetrix verify that IRFH5300TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH5300TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5300TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH5300TR2PBF?

All IRFH5300TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5300TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5300TR2PBF part is unused and in its original packaging.

Return procedure for IRFH5300TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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