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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5301TR2PBF

Name: IRFH5301TR2PBF
Brand: Infineon Technologies
SKU: IRFH5301TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5301TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH5301TR2PBF.pdf

Description:: MOSFET N-CH 30V 35A 5X6 PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:4,844

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Product details

Overview

IRFH5301TR2PBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 100 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package with 1.85 mΩ max R_DS(on) at V_GS = 10 V, optimized for high-current synchronous buck converters and OR-ing applications on 12 V bus systems.

For engineers reviewing the IRFH5301TR2PBF datasheet, IRFH5301TR2PBF pinout, IRFH5301TR2PBF application, or IRFH5301TR2PBF equivalent, key selection criteria include low thermal resistance to PCB (1.1 °C/W), 37 nC typical gate charge, 100% R_G tested gate resistance, and MSL1 industrial qualification for high-reliability power stage designs.

Technical Context

This MOSFET employs trench-gate silicon technology with optimized cell pitch and deep-trench source contact to achieve sub-2 mΩ on-resistance while maintaining fast switching performance. Its low Q_gd/Q_gs2 ratio (12 nC / 5 nC) supports clean voltage transition during hard-switching.

The integrated body diode exhibits 24–36 ns reverse recovery time and 53–80 nC Q_rr at I_F = 50 A, enabling efficient operation in synchronous rectification where diode conduction is brief and controlled by external timing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 12 V bus systems with margin against transients and ripple
R_DS(on) max @ V_GS = 10 V	1.85 mΩ - Enables ≤185 mW conduction loss at 100 A DC current
Q_g typ.	37 nC - Determines gate drive power requirement and switching speed in 500 kHz+ buck stages
R_θJC (Bottom)	1.1 °C/W - Allows direct thermal coupling to PCB copper pour for >100 W continuous dissipation
I_D @ T_C(Bottom) = 25 °C	100 A - Rated for high-current power delivery without heatsink when mounted on 2 oz Cu board
V_GS(th)	1.35–2.35 V - Ensures robust turn-on with standard 3.3 V or 5 V logic-level gate drivers
C_iss	5114 pF - Impacts gate drive loop stability and EMI filtering requirements

Pinout & Package

PQFN 5×6 mm Outline "B" package with exposed bottom thermal pad; 3-pin configuration (Drain, Source, Gate) arranged in industry-standard pinout for multi-vendor compatibility and automated assembly.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from input supply	Internally connected to exposed copper pad - primary thermal and electrical path to PCB
Source (S)	Return path for load current; reference for gate drive	Connected to multiple perimeter pads - low-inductance return for high di/dt switching
Gate (G)	Control terminal for channel conduction	Single small pad adjacent to Source - requires controlled impedance routing to minimize ringing

Key Features

Feature	Design Value
Low R_DS(on) (<1.85 mΩ)	Reduces conduction losses in high-current DC/DC stages, improving efficiency at 50–100 A loads
Low R_θJC (1.1 °C/W)	Enables direct thermal transfer to PCB ground plane, eliminating need for discrete heatsinks in compact designs
100% R_G tested	Guarantees gate resistance between 1.5 Ω and 2.3 Ω - critical for predictable switching timing and EMI control
Low profile (<0.9 mm)	Supports ultra-thin power modules and stacked PCB architectures with height constraints under 1.0 mm
MSL1 industrial qualification	Permits reflow soldering without moisture sensitivity concerns - suitable for high-volume manufacturing

Applications

OR-ing MOSFET for 12 V Bus

Synchronous Buck Converter

Use Scenario: Redundant 12 V power supplies feeding common bus with automatic fault isolation.

IC Role / Device Role / Timing Role: High-side N-channel switch controlling forward conduction path; body diode blocks reverse current during fault.

Use Value: 1.85 mΩ R_DS(on) limits voltage drop to <200 mV at 100 A, minimizing bus imbalance and heat generation.

Use Scenario: Primary high-side switch in 500 kHz–1 MHz step-down converter for CPU/GPU core rails.

IC Role / Device Role / Timing Role: Fast-turning high-current switch synchronized with low-side FET; gate charge optimized for minimal dead-time loss.

Use Value: 37 nC Q_g enables full turn-on within 20 ns using 2 A peak gate driver, reducing overlap loss at high frequency.

Battery-Operated DC Motor Inverter

In-Rush Current Limiter

Use Scenario: Half-bridge leg in 24 V battery-powered motor drives requiring bidirectional PWM control.

IC Role / Device Role / Timing Role: Low-side switching element handling continuous 50–80 A motor phase current with body diode freewheeling.

Use Value: 24–36 ns t_rr and 53–80 nC Q_rr minimize switching loss during diode conduction in PWM decay cycles.

Use Scenario: Soft-start circuit limiting surge current into large bulk capacitors during system power-up.

IC Role / Device Role / Timing Role: Linear-mode current limiter operating in ohmic region before transitioning to saturation.

Use Value: 100 A rated current and 150 °C max junction temperature support sustained 3–5 s inrush pulses without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5201TR2PBF	30 V, 1.35 mΩ R_DS(on), 42 nC Q_g, same PQFN 5×6 package	Lower on-resistance but higher gate charge increases drive loss at >1 MHz	Prefer when conduction loss dominates and gate drive capability allows extra 5 nC charge
SI7850DP-T1-GE3	30 V, 1.75 mΩ R_DS(on), 32 nC Q_g, PowerPAK SO-8 package	Different footprint and thermal path - R_θJA = 40 °C/W vs. 35 °C/W for IRFH5301	Select when SO-8 layout reuse is required and PCB thermal design accommodates higher ambient rise

Compared with IRFH5201TR2PBF and SI7850DP-T1-GE3, IRFH5301TR2PBF offers the best balance of low R_DS(on), moderate Q_g, and ultra-low R_θJC, making it optimal for thermally constrained, high-frequency synchronous buck stages where both conduction and switching losses must be minimized.

Availability

IRFH5301TR2PBF is available at Aetrix Electronics and suitable for high-current DC/DC converters, redundant power OR-ing circuits, and battery-fed motor inverters requiring stable component supply and long-term production continuity.

Supply support for IRFH5301TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive electronics, and industrial control solutions, with deep expertise in silicon-based power devices.

The IRFH5301TR2PBF belongs to Infineon's TrenchFET HEXFET family, engineered specifically for high-efficiency, high-density power conversion in server, telecom, and industrial equipment where thermal performance and reliability are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C(Bottom) = 100 °C, the IRFH5301TR2PBF supports 28 A continuous drain current with V_GS = 10 V. This derating reflects thermal limits of the PQFN package and PCB thermal interface; actual usable current depends on copper area, layer count, and airflow.

Is this MOSFET suitable for 3.3 V gate drive?

Yes - with V_GS(th) ranging from 1.35 V to 2.35 V and R_DS(on) = 2.4 mΩ max at V_GS = 4.5 V, the device fully enhances under 3.3 V logic drive. However, conduction loss increases ~30% versus 10 V drive, so thermal design must account for higher I²R heating.

Does the IRFH5301TR2PBF have avalanche rating?

Yes - it is rated for 150 mJ single-pulse avalanche energy at I_AS = 9.69 A (T_J = 25 °C). The energy rating decreases with rising junction temperature and is not intended for repetitive avalanche operation; proper snubbing and layout are required for unclamped inductive switching.

How does the PQFN 5×6 package improve thermal performance over SO-8?

The PQFN 5×6 exposes the drain directly to the PCB via a large bottom thermal pad, achieving R_θJC(Bottom) = 1.1 °C/W - over 3× better than typical SO-8 R_θJC (~3.5–4.0 °C/W). This allows >100 W power dissipation on 2 oz Cu boards without external heatsinks, unlike SO-8 which requires significant copper area or heatsinking above 30 W.

IRFH5301TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 1.85mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 77 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 5114 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PQFN (5x6) Single Die

IRFH5301TR2PBF FAQ

1.How can I place an order for IRFH5301TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5301TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5301TR2PBF reliable?

The price and inventory of IRFH5301TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5301TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH5301TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5301TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5301TR2PBF?

IRFH5301TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5301TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5301TR2PBF?

For technical support, including IRFH5301TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5301TR2PBF requirements.

6.How does Aetrix verify that IRFH5301TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH5301TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5301TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH5301TR2PBF?

All IRFH5301TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5301TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5301TR2PBF part is unused and in its original packaging.

Return procedure for IRFH5301TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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