Infineon Technologies IRFH5302DTR2PBF

Overview

IRFH5302DTR2PBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 100 A N-channel PQFN 5×6 mm power MOSFET optimized as a synchronous rectifier in high-frequency buck converters. It features 2.5 mΩ R_DS(on) at V_GS = 10 V, 0.65 V intrinsic Schottky-like body diode forward voltage at 5.0 A, and 19 ns typical reverse recovery time (t_rr). Its low thermal resistance (R_θJC(Bottom) = 1.2 °C/W) enables high-power-density DC-DC stages in server VRMs and GPU power delivery.

For engineers reviewing the IRFH5302DTR2PBF datasheet, IRFH5302DTR2PBF pinout, IRFH5302DTR2PBF application, or IRFH5302DTR2PBF equivalent, key selection criteria include verified R_DS(on) ≤2.5 mΩ at 10 V, t_rr ≤29 ns, Q_gd = 7.9 nC, V_SD ≤0.65 V at 5 A, and PQFN 5×6 mm package compatibility with industrial-grade thermal cycling and MSL1 handling.

Technical Context

This HEXFET device uses trench-gate silicon process to achieve low conduction loss and fast switching in synchronous buck topologies. Its gate charge profile (Q_g = 55 nC, Q_gd = 7.9 nC) supports efficient 500 kHz–1 MHz operation with minimal Miller-induced shoot-through risk. The integrated body diode exhibits soft reverse recovery (Q_rr = 28–42 nC), reducing EMI in high-dV/dt environments.

Thermal design leverages direct bottom-side copper thermal pad contact to PCB, delivering 1.2 °C/W junction-to-case (bottom) resistance. The 0.9 mm profile and industry-standard pinout allow drop-in replacement in existing 5×6 mm layouts without requalification of solder paste stencil or pick-and-place programs.

Key Specifications

Pinout & Package

PQFN 5×6 mm package with exposed thermal pad on bottom surface; 3-pin configuration (Drain, Source, Gate) arranged in standard industry layout for synchronous FET placement.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IRFH5302DTR2PBF, IRFH5202TRPBF trades 24% higher R_DS(on) for lower gate charge (45 nC), while SiR626DP-T1-GE3 offers marginally lower on-resistance but requires gate drive tuning for optimal 1 MHz switching due to higher C_oss.

Availability

IRFH5302DTR2PBF is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery systems, and telecom DC-DC converters requiring stable component supply with guaranteed long-term availability and traceable lot control.

Supply support for IRFH5302DTR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The IRFH5302DTR2PBF belongs to Infineon's TrenchFET® HEXFET® family, engineered specifically for high-efficiency, high-frequency synchronous rectification in data center and computing power supplies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFH5302DTR2PBF supports 100 A continuous drain current at T_C(Bottom) = 25°C, derating linearly to 40 A at T_C(Bottom) = 100°C per the absolute maximum ratings table. This assumes proper PCB copper area (≥200 cm² 2 oz Cu) and no airflow, based on R_θJC = 1.2 °C/W and T_J(max) = 150°C.

Is this MOSFET suitable for 48 V input buck converters?

No - the 30 V V_DS rating makes IRFH5302DTR2PBF unsuitable for direct 48 V operation. It is designed for 12 V input or lower systems (e.g., 12 V → 1 V VRMs). For 48 V inputs, a 60 V or 80 V rated MOSFET with comparable R_DS(on) and package size is required.

Does the body diode require external snubbing in synchronous operation?

No external snubber is needed when used as a synchronous rectifier with properly timed gate drive. The 19 ns t_rr and soft recovery characteristics (Q_rr = 28–42 nC) prevent voltage overshoot exceeding 30 V in typical 500 kHz–1 MHz buck layouts with <10 nH loop inductance.

What is the recommended gate resistor value for 1 MHz switching?

A 5.6 Ω to 10 Ω gate resistor is recommended for 1 MHz operation. This balances switching speed (td(on)/td(off) ≈ 16/20 ns) against gate driver stress and EMI, given the device's Q_g = 55 nC and R_g = 1.9 Ω internal resistance. Lower values increase dV/dt and risk shoot-through; higher values degrade efficiency.