Infineon Technologies IRFH5302DTRPBF

Overview

IRFH5302DTRPBF from Infineon Technologies is a 30 V, 100 A N-channel PQFN 5×6 mm power MOSFET optimized as a synchronous rectifier in high-frequency buck converters. It delivers 2.5 mΩ R_DS(on) at V_GS = 10 V, features an integrated Schottky-like body diode with 0.65 V forward voltage at 5.0 A, and achieves 19 ns typical reverse recovery time for low-loss switching in DC-DC stages.

For engineers reviewing the IRFH5302DTRPBF datasheet, IRFH5302DTRPBF pinout, IRFH5302DTRPBF application, or IRFH5302DTRPBF equivalent, key selection criteria include its bottom-side thermal resistance (1.2 °C/W), industry-standard PQFN pinout compatibility, 100% R_g tested gate reliability, and validated performance under 50 A continuous drain current at T_C(Bottom) = 25 °C.

Technical Context

This HEXFET device uses a trench-gated silicon process to achieve ultra-low on-resistance and fast switching dynamics. Its gate charge profile-Q_g = 55 nC, Q_gd = 7.9 nC, Q_sw = 11.9 nC-enables efficient operation at >1 MHz frequencies when paired with appropriate gate drivers.

The integrated body diode exhibits low V_SD (0.65 V typ. @ 5.0 A) and short t_rr (19 ns typ.), reducing dead-time losses and enabling robust synchronous rectification without external Schottky diodes. Thermal design leverages direct bottom-side copper thermal path with R_θJC(Bottom) = 1.2 °C/W.

Key Specifications

Pinout & Package

Packaged in a leadless PQFN 5 mm × 6 mm outline "B" with exposed drain pad on bottom for thermal and electrical connection. Pin 1 identifier located at top-left corner of package top surface per JEDEC MO-229 standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET applications.

Compared with IRFH5202TRPBF and SI7850DP-T1-GE3, IRFH5302DTRPBF provides the lowest R_DS(on) and best thermal resistance in its PQFN 5×6 class, making it optimal for space-constrained, high-current synchronous rectification where efficiency and thermal headroom are critical.

Availability

IRFH5302DTRPBF is available at Aetrix Electronics and suitable for server VRMs, GPU power delivery modules, and telecom intermediate bus converters requiring stable component supply and high-volume traceable sourcing.

Supply support for IRFH5302DTRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's HEXFET® PQFN power MOSFET product line, engineered specifically for high-frequency, high-current synchronous rectification in advanced DC-DC converters where low R_DS(on), fast switching, and superior thermal performance are mandatory.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The IRFH5302DTRPBF supports 40 A continuous drain current when the bottom-case temperature is maintained at 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the 1.2 °C/W R_θJC(Bottom) and package power dissipation capability at elevated temperatures.

Does this MOSFET require a gate resistor for stability in high-speed switching?

Yes - a gate resistor (typically 1–5 Ω) is recommended to dampen ringing caused by gate loop inductance and prevent unintended oscillation during fast edge transitions. The device's 55 nC total gate charge and 1.9 Ω typical gate resistance make external R_g essential for controlling dV/dt and ensuring clean turn-on/turn-off waveforms at >500 kHz.

Can IRFH5302DTRPBF be used in parallel configurations?

Yes - its four dedicated source terminals and tightly controlled R_DS(on) (2.0–2.5 mΩ) and V_GS(th) (1.35–2.35 V) specifications enable effective current sharing in parallel arrangements. Layout symmetry and matched gate drive paths are required to maintain balance under dynamic load conditions.

Is the body diode suitable for reverse recovery in hard-switched topologies?

Yes - with 19 ns typical reverse recovery time and 28–42 nC Q_rr, the intrinsic body diode performs comparably to discrete Schottky diodes in hard-switched synchronous buck converters. However, zero-voltage switching (ZVS) or careful dead-time optimization remains necessary to avoid cross-conduction losses.