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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5303TR2PBF

Name: IRFH5303TR2PBF
Brand: Infineon Technologies
SKU: IRFH5303TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5303TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH5303TR2PBF.pdf

Description:: MOSFET N-CH 30V 23A/82A 8PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFH5303TR2PBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 82 A N-channel PQFN 5×6 mm power MOSFET optimized as a high-frequency synchronous buck converter control FET. It delivers 3.6 mΩ R_DS(on) at V_GS = 10 V, 15 nC total gate charge, and 2.7 °C/W junction-to-case (bottom) thermal resistance for high-efficiency DC-DC conversion in server VRMs and POL modules.

For engineers reviewing the IRFH5303TR2PBF datasheet, IRFH5303TR2PBF pinout, IRFH5303TR2PBF application, or IRFH5303TR2PBF equivalent, key selection criteria include its low Q_g/R_DS(on) ratio, MSL1 industrial qualification, industry-standard PQFN pinout, and validated performance at 49 A continuous drain current with bottom-side thermal pad cooling.

Technical Context

This HEXFET device uses a trench-gated silicon process to achieve fast switching with low conduction loss. Its gate threshold voltage (1.35–2.35 V) enables robust 4.5 V logic-level drive compatibility, while the 0.6 Ω gate resistance and 220 pF Crss support controlled dv/dt and reduced EMI in hard-switched topologies.

The integrated body diode exhibits 19–29 ns reverse recovery time and 39–59 nC Q_rr at T_J = 125°C, making it suitable for synchronous rectification where diode conduction is brief and well-controlled. Thermal design leverages the exposed bottom thermal pad for direct PCB copper transfer, not top-side convection.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports 12 V input bus designs with margin for transient spikes up to 24 V nominal operation.
R_DS(on) max @ 10 V	4.2 mΩ - Enables ≤1.5 W conduction loss at 49 A, critical for >90% efficiency in 48 V→12 V or 12 V→1 V POL stages.
Q_g typical	15 nC - Reduces gate driver power demand and switching transition time in 500 kHz–1 MHz buck converters.
I_D @ T_C(Bottom) = 25°C	82 A - Specifies maximum continuous current under ideal PCB thermal extraction via bottom thermal pad.
R_θJC(Bottom)	2.7 °C/W - Confirms thermal path efficiency from die to PCB; requires ≥200 mm² 2-oz copper pour under package for rated current.
V_GS(th)	1.35–2.35 V - Ensures reliable turn-on with standard 3.3 V or 5 V gate drivers without overdrive risk.
C_iss	2190 pF - Influences Miller plateau duration and gate drive strength requirements in high-dV/dt applications.

Pinout & Package

PQFN 5×6 mm (Outline "B") package with exposed thermal pad on bottom surface. Pin 1 identifier located at top-left corner of package top view; leads are source-connected (S), drain-connected (D), and gate-connected (G) terminals arranged in standard industry pinout for multi-vendor compatibility.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 0–10 V logic-level signals; 0.6 Ω internal gate resistance limits ringing and simplifies driver design.
D	Drain	Main high-side switching node connected to input bus; tied internally to copper leadframe and top-surface metal for low-inductance routing.
S	Source	Power return path and reference for gate drive; multiple S pins provide low-impedance connection to ground plane and reduce source inductance.
Thermal Pad (Bottom)	Thermal Interface	Electrically isolated copper pad soldered directly to PCB thermal plane; primary heat extraction path accounting for >90% of total dissipation.

Key Features

Feature	Design Value
Low Q_g/R_DS(on) ratio	15 nC / 4.2 mΩ = 3.57 nC·mΩ⁻¹ - Enables high-frequency operation with minimal combined switching + conduction loss.
100% R_G tested	Every unit verified for 0.6 Ω ±15% gate resistance - ensures consistent switching timing and eliminates batch-dependent drive tuning.
MSL1 industrial qualification	Rated for unlimited floor life at ≤30°C/60% RH - supports extended SMT line storage without baking, reducing manufacturing overhead.
Low profile (<0.9 mm)	Enables <1.2 mm board height in stacked POL modules - critical for space-constrained ASIC/GPU power delivery near die.
RoHS & halogen-free	Zero lead, bromide, or chlorine content - meets IPC-1752A Class 2 reporting and EU automotive supply chain requirements.

Applications

Server Voltage Regulator Modules

Telecom Point-of-Load Converters

Use Scenario: 48 V to 1 V/100 A step-down conversion feeding high-performance CPUs in rack-mounted servers.

IC Role / Device Role / Timing Role: High-side control MOSFET in multiphase synchronous buck topology operating at 600 kHz with interleaved phases.

Use Value: 3.6 mΩ R_DS(on) and 15 nC Q_g minimize phase current imbalance and thermal derating across 4–6 parallel phases.

Use Scenario: 24 V to 3.3 V/20 A conversion powering baseband processing units in 5G radio units.

IC Role / Device Role / Timing Role: Primary switch in compact, thermally constrained POL module with forced-air cooling limited to 45°C ambient.

Use Value: 2.7 °C/W R_θJC(Bottom) enables full 82 A rating using only 120 mm² of 2-oz inner-layer copper, eliminating heatsinks.

Industrial Motor Drive Gate Drivers

Automotive ADAS Power Supplies

Use Scenario: Isolated half-bridge gate driver stage supplying 10 A peak current to IGBTs in servo amplifier inverters.

IC Role / Device Role / Timing Role: Low-side switch controlling bootstrap capacitor recharge cycle in high-side gate driver IC supply rail.

Use Value: 19 ns t_rr and 39 nC Q_rr prevent shoot-through during rapid bootstrap recharging at 20 kHz PWM frequency.

Use Scenario: 12 V to 5 V/5 A power rail for radar sensor SoCs in autonomous driving ECUs operating at −40°C to +125°C.

IC Role / Device Role / Timing Role: Main switch in compact, AEC-Q101 qualified buck converter with no external thermal interface.

Use Value: Stable V_GS(th) shift (−6.4 mV/°C) and 150°C T_J rating ensure reliable start-up and regulation across full automotive temperature range.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5203TR2PBF	Same PQFN 5×6 package but 40 V V_DS, 3.8 mΩ R_DS(on), 17 nC Q_g	Better voltage margin for 24 V systems; higher Q_g increases gate drive loss at >1 MHz	Select when input transients exceed 30 V or when 40 V rating is mandated by safety standards.
SI7850DP-T1-GE3	SO-8 package, 30 V, 4.5 mΩ R_DS(on), 22 nC Q_g, R_θJA = 50 °C/W	No bottom thermal pad; relies on PCB trace conduction; lower current rating (60 A)	Select for legacy SO-8 layouts or cost-sensitive designs where 20% lower efficiency and 25% lower current are acceptable.

Compared with IRFH5203TR2PBF and SI7850DP-T1-GE3, the IRFH5303TR2PBF offers the lowest R_DS(on)/Q_g product in PQFN 5×6, enabling highest power density in thermally demanding POL applications where bottom-side cooling is available.

Availability

IRFH5303TR2PBF is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, industrial motor drive gate drivers, and automotive ADAS power supplies requiring stable component supply and long-term production continuity.

Supply support for IRFH5303TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to Infineon's TrenchStop™ and StrongIRFET™ families, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and industrial power systems where thermal density and switching speed are critical.

FAQ

What is the maximum recommended PCB copper area for the thermal pad?

The datasheet specifies minimum 200 mm² of 2-oz copper connected to the bottom thermal pad for full 82 A rating at T_C = 25°C. For 70°C case temperature, 300 mm² is required. Thermal vias (≥8 × 0.3 mm diameter, filled or plated) must connect the pad to inner ground planes to maintain R_θJC ≤ 2.7 °C/W.

Can IRFH5303TR2PBF be driven directly by a 3.3 V microcontroller GPIO?

Yes - with V_GS(th) as low as 1.35 V and guaranteed turn-on at 4.5 V, the device conducts fully at 3.3 V but with elevated R_DS(on) (~6.8 mΩ). For optimal efficiency, use a dedicated gate driver (e.g., IRS2007) to deliver 10 V swing; 3.3 V drive is acceptable only for low-duty-cycle or low-current biasing.

Is avalanche energy rating specified for repetitive operation?

No - the 200 mJ single-pulse EAS rating (Fig. 13) applies only to non-repetitive, unclamped inductive switching events. The device is not characterized for repetitive avalanche; system design must avoid operation in the avalanche region using proper snubbing, layout, and voltage clamping to prevent cumulative die degradation.

Does the PQFN 5×6 "B" outline support automated optical inspection (AOI) of solder joints?

Yes - the package's coplanar lead geometry, defined solder mask openings, and exposed thermal pad with standardized stencil aperture (0.15 mm thickness, 80% area ratio) enable reliable AOI detection of voiding, bridging, and insufficient wetting. Reflow profile must achieve >90% pad fill per IPC-A-610 Class 2 guidelines.

IRFH5303TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Ta), 82A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 49A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2190 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 46W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH5303TR2PBF FAQ

1.How can I place an order for IRFH5303TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5303TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5303TR2PBF reliable?

The price and inventory of IRFH5303TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5303TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH5303TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5303TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5303TR2PBF?

IRFH5303TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5303TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5303TR2PBF?

For technical support, including IRFH5303TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5303TR2PBF requirements.

6.How does Aetrix verify that IRFH5303TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH5303TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5303TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH5303TR2PBF?

All IRFH5303TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5303TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5303TR2PBF part is unused and in its original packaging.

Return procedure for IRFH5303TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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