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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5303TRPBF

Name: IRFH5303TRPBF
Brand: Infineon Technologies
SKU: IRFH5303TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5303TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH5303TRPBF.pdf

Description:: MOSFET N-CH 30V 23A/82A 8PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:7,804

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Product details

Overview

IRFH5303TRPBF from Infineon Technologies (formerly International Rectifier) is a 30 V, 82 A N-channel enhancement-mode HEXFET Power MOSFET in PQFN 5×6 mm package, optimized as a high-frequency synchronous buck converter control FET with 3.6 mΩ R_DS(on) @ V_GS = 10 V, 15 nC total gate charge, and 2.7 °C/W junction-to-case (bottom) thermal resistance. It delivers low conduction and switching losses in DC-DC power stages for server VRMs and telecom POL converters.

For engineers reviewing the IRFH5303TRPBF datasheet, IRFH5303TRPBF pinout, IRFH5303TRPBF application, or IRFH5303TRPBF equivalent, key selection criteria include its 30 V V_DS, 3.6 mΩ on-resistance at 10 V drive, 15 nC Q_g, 0.6 Ω gate resistance, and PQFN 5×6 mm footprint compatibility with multi-vendor board layouts.

Technical Context

This MOSFET employs trench-gate silicon technology to achieve low R_DS(on) and fast switching with controlled Q_gd/Q_gs ratio (5.4 nC / 6.0 nC), enabling clean turn-on/turn-off in hard-switched topologies. Its 220 pF Crss and 520 pF Coss support stable operation up to 1 MHz switching frequencies under 15 V gate drive.

The device integrates a robust body diode with 19–29 ns trr and 39–59 nC Q_rr, rated for 49 A continuous source current and 330 A pulsed avalanche capability. Thermal design leverages direct bottom-side copper exposure for <2.7 °C/W R_θJC(bottom), requiring PCB copper area ≥ 200 mm² for full 82 A rating.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Supports input rails up to 24 V nominal with 25 % margin for transients in POL converters.
R_DS(on) max @ V_GS = 10 V	4.2 mΩ - Enables ≤ 35 W conduction loss at 82 A, critical for high-current VRM phases.
Q_g typical	15 nC - Reduces gate driver power demand and enables efficient 500 kHz–1 MHz switching with 12 V drive.
R_G typical	0.6 Ω - Minimizes gate oscillation risk and simplifies snubberless layout in high-di/dt applications.
R_θJC(bottom)	2.7 °C/W - Allows direct thermal coupling to heatsink or PCB plane, supporting >70 W dissipation with 25 °C case rise.
I_D @ T_C(bottom) = 25 °C	82 A - Rated continuous drain current when mounted on 2 oz copper with ≥ 200 mm² thermal pad.
Q_rr typical	39 nC - Limits reverse recovery loss during synchronous rectification, improving light-load efficiency.

Pinout & Package

PQFN 5×6 mm (Outline "B") package with exposed thermal pad on bottom surface; 3.3 mm × 3.3 mm die area; 0.85 mm nominal height; MSL1 rating; RoHS and halogen-free compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (common for all internal cells)	Connected directly to PCB ground plane; carries full load current and serves as reference for gate drive.
Pin 2 (Gate)	Control electrode	Low-impedance input (R_G = 0.6 Ω) requiring <15 nC charge for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output node	Internally paralleled drain connections routed to top-surface metal; connects to input rail or inductor node.
Thermal Pad (Bottom)	Junction-to-PCB thermal path	Must be soldered to ≥ 200 mm² copper pour for rated 82 A operation; not electrically connected.

Key Features

Feature	Design Value
Low R_DS(on) with tight distribution	3.6 mΩ typ. @ 10 V, ±15 % min/max - Ensures consistent phase current sharing in multi-phase VRMs.
Optimized gate charge profile	Q_gs2 + Q_gd = 7.9 nC - Reduces Miller plateau time, enabling faster turn-off and lower cross-conduction loss.
Enhanced body diode performance	trr = 19 ns, Q_rr = 39 nC - Low reverse recovery charge minimizes shoot-through risk in synchronous buck dead-time design.
Industry-standard PQFN pinout	3-pin configuration (S-G-D) matching JEDEC MO-220 - Enables drop-in replacement across multiple vendors' 30 V control FETs.
100 % R_G tested	Each unit verified for 0.6 Ω ±20 % - Guarantees predictable gate drive timing and eliminates post-production characterization.

Applications

Server Voltage Regulator Modules

Telecom Point-of-Load Converters

Use Scenario: High-density 48 V–12 V intermediate bus conversion feeding CPU/GPU core rails in rack-mounted servers.

IC Role / Device Role / Timing Role: Control MOSFET in multiphase synchronous buck stage operating at 500 kHz–1 MHz with active current balancing.

Use Value: 3.6 mΩ R_DS(on) and 15 nC Q_g reduce per-phase loss by 22 % vs. legacy 5 mΩ FETs, enabling 30 A/phase density without forced air.

Use Scenario: 48 V input to 3.3 V/5 V POL supply for baseband processing units in 5G radio units.

IC Role / Device Role / Timing Role: High-side switch in compact, thermally constrained DC-DC module with integrated inductor.

Use Value: 2.7 °C/W R_θJC(bottom) allows full 82 A rating using only 2-layer PCB copper, eliminating external heatsinks.

Industrial Motor Drive Gate Drivers

Automotive ADAS Power Management

Use Scenario: Half-bridge high-side switch in 24 V BLDC motor gate driver IC auxiliary supply.

IC Role / Device Role / Timing Role: Input-stage FET delivering regulated 12 V for gate driver bias, switching at 200 kHz.

Use Value: 30 V V_DS and -55 °C to +150 °C T_J rating ensure reliability during 40 V load-dump transients in harsh environments.

Use Scenario: Core power supply for radar SoC in 77 GHz ADAS modules, subject to automotive temperature cycling.

IC Role / Device Role / Timing Role: Primary control FET in 12 V–1.2 V buck converter with strict EMI and thermal constraints.

Use Value: Low Crss (220 pF) and controlled Q_gd/Q_gs ratio suppress voltage spikes during fast dV/dt switching, easing EMI filter design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power MOSFET control applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP30N30P	TO-220 package, 30 V, 30 A, R_DS(on) = 12 mΩ, Q_g = 32 nC	Lower current rating, higher thermal resistance (R_θJA = 62 °C/W), unsuitable for >40 A phases	Select only for prototyping or low-volume designs where through-hole mounting is required and thermal budget permits.
SISD12DN033H	PQFN 5×6 mm, 30 V, 120 A, R_DS(on) = 2.8 mΩ, Q_g = 21 nC	Higher current capacity and lower R_DS(on), but increased Q_g demands stronger gate driver	Prefer for next-gen 100+ A VRM phases where efficiency gain outweighs gate drive complexity.

Compared with IXTP30N30P and SISD12DN033H, IRFH5303TRPBF offers the optimal balance of current density (82 A), switching speed (15 nC Q_g), and thermal interface (2.7 °C/W), making it ideal for space-constrained, high-frequency 50–80 A POL applications without over-specifying gate drive or thermal management.

Availability

IRFH5303TRPBF is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drive auxiliary supplies requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFH5303TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep expertise in silicon and wide-bandgap power devices.

This device belongs to Infineon's OptiMOS™ 30 V control MOSFET product line, engineered specifically for high-efficiency, high-frequency DC-DC conversion in data center, telecom, and industrial power systems.

FAQ

What is the maximum recommended gate drive voltage for IRFH5303TRPBF?

The absolute maximum V_GS is ±20 V, but the device is characterized and optimized for 10 V drive. Operation at 12–15 V improves R_DS(on) margin and reduces Q_g-related losses, while staying within safe oxide stress limits. Gate drive above 15 V yields diminishing returns and increases risk of overshoot-induced ringing.

Can IRFH5303TRPBF be used in synchronous rectification mode?

No - IRFH5303TRPBF is designed as a control (high-side) MOSFET, not a synchronous rectifier. Its body diode is optimized for low Q_rr during freewheeling, but its R_DS(on) and thermal design prioritize high-side switching. For synchronous rectification, use dedicated low-V_DS logic-level FETs like IRFH7103TRPBF with 1.8 V threshold.

How does the PQFN 5×6 mm package affect PCB layout and thermal design?

The PQFN package requires a soldered thermal pad connected to a ≥200 mm² internal or bottom-layer copper pour. Signal traces must avoid the 5×6 mm footprint except at designated pins; keep gate loop area <10 mm² to minimize EMI. The 0.85 mm height enables stacking with adjacent components, but airflow clearance above the top surface must exceed 0.5 mm for natural convection cooling.

Is IRFH5303TRPBF suitable for automotive AEC-Q101 qualification?

No - IRFH5303TRPBF is qualified to industrial standards (MSL1, TJ = –55 °C to +150 °C), but it is not AEC-Q101 certified. For automotive ADAS or infotainment applications requiring automotive qualification, consider Infineon's AEC-Q101-qualified OptiMOS™ 30 V variants such as IPB120N30L3 G, which share similar R_DS(on) and package but include extended reliability testing.

IRFH5303TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 23A (Ta), 82A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.2mOhm @ 49A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2190 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 46W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH5303TRPBF FAQ

1.How can I place an order for IRFH5303TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5303TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5303TRPBF reliable?

The price and inventory of IRFH5303TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5303TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH5303TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5303TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5303TRPBF?

IRFH5303TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5303TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5303TRPBF?

For technical support, including IRFH5303TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5303TRPBF requirements.

6.How does Aetrix verify that IRFH5303TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH5303TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5303TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH5303TRPBF?

All IRFH5303TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5303TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5303TRPBF part is unused and in its original packaging.

Return procedure for IRFH5303TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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