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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5304TR2PBF

Name: IRFH5304TR2PBF
Brand: Infineon Technologies
SKU: IRFH5304TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5304TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH5304TR2PBF.pdf

Description:: MOSFET N-CH 30V 22A 8VQFN

Quantity:: RFQ Add To RFQ list

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Inventory:3,753

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Product details

Overview

IRFH5304TR2PBF from Infineon Technologies is a 30 V, 79 A (T_c=25°C) N-channel Trench MOSFET in PQFN 5 mm × 6 mm package, optimized as a high-current synchronous rectifier and control switch in buck converters for server VRMs and POL modules.

For engineers reviewing the IRFH5304TR2PBF datasheet, IRFH5304TR2PBF pinout, IRFH5304TR2PBF application, or IRFH5304TR2PBF equivalent, key selection criteria include R_DS(on) ≤ 4.5 mΩ @ 10 V, Q_g = 16 nC (typ), thermal resistance R_θJC(bottom) = 2.7 °C/W, low-profile 0.9 mm height, and MSL1 industrial qualification.

Technical Context

This MOSFET employs Infineon's Trench-based StrongIRFET™ process to achieve low conduction loss and fast switching with minimal gate charge. Its symmetric dual-side cooling PQFN package enables direct thermal coupling to PCB copper, supporting high-current DC-DC stages where junction-to-board thermal path dominates thermal management.

The device features fully characterized body diode (V_SD = 0.71 V @ 5 A, t_rr = 19 ns typ), 100% R_g tested for gate drive consistency, and avalanche-rated E_AS = 46 mJ - enabling robust operation under transient overcurrent and inductive turn-off conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 12 V input bus and 5/3.3 V output buck stages.
R_DS(on) max @ 10 V	4.5 mΩ - Enables <1.5 W conduction loss at 79 A continuous drain current with proper board cooling.
Q_g typical	16 nC - Reduces gate driver power demand and switching loss in high-frequency (>500 kHz) POL converters.
R_θJC (bottom)	2.7 °C/W - Allows >40 W power dissipation with 100°C ΔT to PCB, supporting high-density multi-phase designs.
I_D @ T_c = 25°C	79 A - Rated for high-current synchronous rectification in single-phase VRMs or paralleled phases.
V_GS(th)	1.35–2.35 V - Ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers.
t_rr / Q_rr	19 ns / 44 nC - Minimizes reverse recovery loss and shoot-through risk in synchronous buck topologies.

Pinout & Package

PQFN 5 mm × 6 mm, 8-pin, bottom-exposed thermal pad (pin 1 = Gate, pins 2–4 = Source, pins 5–7 = Drain, pin 8 = Source). Industry-standard pinout supports drop-in replacement across multiple vendors' 30 V power stages.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; low-input-capacitance node requiring <1.2 Ω gate resistor for optimal dV/dt control.
Pins 2–4, 8	Source	Common source node; electrically and thermally tied to exposed pad for low-inductance return path and heat spreading.
Pins 5–7	Drain	Main power output node; connected to internal die drain metallization and top-side copper for parallel current handling.
Exposed Pad	Thermal & Electrical Source	Primary thermal interface to PCB; must be soldered to ≥4 cm² of 2 oz copper for rated R_θJC.

Key Features

Feature	Design Value
Low Q_g (16 nC typ)	Reduces gate drive loss and enables higher switching frequencies without increasing driver size or cost.
R_θJC(bottom) = 2.7 °C/W	Permits >40 W continuous power dissipation using only PCB copper-no heatsink required in most POL applications.
100% R_g tested	Ensures consistent gate threshold and switching timing across production lots, critical for multi-phase current sharing.
MSL1, industrial qualification	Supports lead-free reflow without popcorn cracking and guarantees reliability in extended-temperature industrial environments.
Low profile (≤0.9 mm)	Enables ultra-thin VRM designs and compatibility with tight mechanical envelopes in telecom and AI accelerator cards.

Applications

Server Voltage Regulator Modules (VRMs)

Point-of-Load (POL) Converters

Use Scenario: High-current, multi-phase buck converter supplying GPU or CPU core voltage (0.8–1.2 V) from 12 V input bus.

IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) operating at 300–1000 kHz with precise dead-time control.

Use Value: 4.5 mΩ R_DS(on) and 2.7 °C/W thermal resistance enable >95% efficiency at 60 A per phase while maintaining <85°C junction temperature.

Use Scenario: Compact 10–30 A DC-DC module on FPGA or ASIC carrier boards requiring minimal footprint and height.

IC Role / Device Role / Timing Role: Primary high-side control MOSFET in integrated power stage, driven by dedicated gate controller.

Use Value: 16 nC Q_g and industry-standard pinout allow direct integration with common gate drivers and layout reuse across platforms.

Telecom Power Supplies

AI Accelerator Card Power Delivery

Use Scenario: 48 V to 12 V intermediate bus converter in 1RU telecom shelf with forced-air cooling.

IC Role / Device Role / Timing Role: Primary switch in active-clamp forward or LLC resonant topology, leveraging avalanche ruggedness.

Use Value: 46 mJ E_AS rating and 320 A pulsed current capability ensure survival during line transients and short-circuit events.

Use Scenario: Distributed 3.3 V/5 V power rails feeding memory interfaces and PCIe retimers on dense AI training cards.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck stages adjacent to high-speed signal traces.

Use Value: 0.9 mm profile avoids interference with BGA escape routing; MSL1 rating ensures reliability through multiple reflow cycles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, low-R_DS(on) MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NTMFS5C673NL	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 18.5 nC; PQFN 5×6, same pinout	Slightly lower R_DS(on) but higher Q_g; no specified E_AS rating	Preferred when conduction loss dominates; verify avalanche margin in hard-switched topologies.
Vishay SiR626DP	R_DS(on) = 4.2 mΩ @ 10 V; Q_g = 15.5 nC; R_θJC = 3.0 °C/W	Lower gate charge but 11% higher thermal resistance; same MSL1 rating	Better for gate-drive-limited designs; requires larger PCB copper area to match thermal performance.

Compared with NTMFS5C673NL and SiR626DP, IRFH5304TR2PBF offers the best balance of low R_DS(on), moderate Q_g, proven avalanche energy, and industry-standard thermal metrics - making it optimal for high-reliability, high-current buck stages where both efficiency and ruggedness are critical.

Availability

IRFH5304TR2PBF is available at Aetrix Electronics and suitable for server VRMs, telecom power supplies, and AI accelerator card power delivery requiring stable component supply and long-term industrial qualification.

Supply support for IRFH5304TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the StrongIRFET™ family, engineered specifically for high-efficiency, high-current DC-DC conversion in datacenter, telecom, and AI infrastructure where thermal density and switching loss are primary constraints.

FAQ

What is the maximum continuous drain current for IRFH5304TR2PBF at 100°C case temperature?

The maximum continuous drain current is 50 A when the mounting base (case) temperature is maintained at 100°C, as specified in the Absolute Maximum Ratings table. This value assumes adequate PCB copper area and airflow to sustain the thermal resistance of 2.7 °C/W from junction to board.

Does IRFH5304TR2PBF support 3.3 V gate drive?

Yes - its gate threshold voltage range is 1.35–2.35 V, and R_DS(on) is specified down to 5.8 mΩ at V_GS = 4.5 V. While full 79 A rating requires 10 V, it delivers usable conduction performance (e.g., ~15 A continuous) with 3.3 V drive in logic-level applications.

Is the exposed thermal pad electrically isolated?

No - the exposed pad is internally connected to the Source terminals (pins 2–4 and 8). It must be soldered to a PCB source-plane copper pour and cannot be floated or used as a separate thermal slug without electrical connection to source potential.

What is the recommended footprint and stencil design for IRFH5304TR2PBF?

Infineon recommends a 5.0 mm × 6.0 mm land pattern with 0.35 mm solder mask defined pads and a 0.15 mm thick stencil with 0.25 mm × 0.45 mm apertures for the thermal pad. Full details are provided in Application Note AN-1136, available on infineon.com.

IRFH5304TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta), 79A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 47A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 2360 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH5304TR2PBF FAQ

1.How can I place an order for IRFH5304TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5304TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5304TR2PBF reliable?

The price and inventory of IRFH5304TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5304TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH5304TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5304TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5304TR2PBF?

IRFH5304TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5304TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5304TR2PBF?

For technical support, including IRFH5304TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5304TR2PBF requirements.

6.How does Aetrix verify that IRFH5304TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH5304TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5304TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH5304TR2PBF?

All IRFH5304TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5304TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5304TR2PBF part is unused and in its original packaging.

Return procedure for IRFH5304TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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