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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5304TRPBF

Name: IRFH5304TRPBF
Brand: Infineon Technologies
SKU: IRFH5304TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5304TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH5304TRPBF.pdf

Description:: MOSFET N-CH 30V 22A/79A 8PQFN

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Product details

Overview

IRFH5304TRPBF from Infineon Technologies is a 30 V, 79 A (T_c=25°C) N-channel Trench MOSFET in PQFN 5 mm × 6 mm package, optimized as a high-current synchronous rectifier and control switch in DC-DC buck converters. It delivers R_DS(on) = 3.8 mΩ (typ) at V_GS = 10 V, Q_g = 16 nC (typ), and thermal resistance R_θJC(bottom) = 2.7 °C/W for high-efficiency power stages.

For engineers reviewing the IRFH5304TRPBF datasheet, IRFH5304TRPBF pinout, IRFH5304TRPBF application, or IRFH5304TRPBF equivalent, key selection criteria include low gate charge for fast switching, bottom-side thermal path for PCB-integrated cooling, 100% R_g testing for gate drive consistency, and MSL1 industrial qualification for reliable SMT assembly.

Technical Context

This MOSFET uses Infineon's StrongIRFET™ trench process to achieve ultra-low R_DS(on) and optimized charge distribution. Its gate threshold voltage (V_GS(th) = 1.35–2.35 V) supports 4.5 V logic-level drive, while Q_gd = 5.8 nC and C_rss = 220 pF enable controlled dV/dt and reduced switching loss in hard-switched topologies.

The device integrates a robust body diode with t_rr = 19–29 ns and Q_rr = 44–66 nC, enabling efficient synchronous rectification without external Schottky replacement. Its R_θJA = 35 °C/W (standard board) and R_θJC(bottom) = 2.7 °C/W confirm primary heat transfer through the exposed drain pad to the PCB copper.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V input rail applications with margin
R_DS(on) max @ V_GS = 10 V	4.5 mΩ - Enables ≤1.8 W conduction loss at 79 A continuous drain current
Q_g typ	16 nC - Reduces gate driver power requirement and enables >1 MHz switching
I_D @ T_c = 25°C	79 A - Continuous current rating when mounted on 1-in² 2-oz Cu PCB with thermal vias
R_θJC(bottom)	2.7 °C/W - Confirms dominant heat flow path through exposed drain pad to PCB
t_rr	19–29 ns - Supports clean reverse recovery in synchronous buck output stage
V_GS(th)	1.35–2.35 V - Ensures full enhancement with standard 3.3 V or 5 V gate drivers

Pinout & Package

PQFN 5 mm × 6 mm (Outline "B") package with exposed drain pad on bottom surface for thermal and electrical connection. Pin 1 (Gate), Pin 2 (Source), Pin 3 (Source), Pin 4 (Source), Pin 5 (Drain), Pin 6 (Drain), Pin 7 (Drain), Pin 8 (Drain), Pin 9 (Drain), Pin 10 (Drain), Pin 11 (Drain), Pin 12 (Drain). All Drain pins are internally connected to the exposed pad.

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control terminal	Receives PWM signal; requires <2.7 Ω series resistance to damp ringing due to low Q_gd/C_rss ratio
Source (Pins 2–4)	Reference node	Provides low-inductance return path for gate drive and source current; tied to power ground plane
Drain (Pins 5–12 + Exposed Pad)	Power output node	Carries full load current; must be connected to large copper area with ≥8 thermal vias for R_θJC = 2.7 °C/W performance

Key Features

Feature	Design Value
Low Q_g (16 nC typ)	Reduces gate driver power dissipation and enables higher-frequency operation without sacrificing efficiency
R_θJC(bottom) = 2.7 °C/W	Allows direct thermal coupling to PCB heatsink, eliminating need for external heatsinks in 50–100 W designs
100% R_g tested	Guarantees consistent gate resistance across production lots, critical for matched parallel operation
MSL1 rating	Permits standard reflow profile without baking, reducing manufacturing complexity and cost
Industry-standard pinout	Enables drop-in replacement with competing PQFN 5×6 MOSFETs without PCB redesign

Applications

Server VRM Power Stage

Industrial DC-DC Converter

Use Scenario: High-density 12 V → 1 V/100 A point-of-load regulator in AI accelerator servers.

IC Role / Device Role: Upper-side control MOSFET in synchronous buck topology with 500 kHz–1 MHz switching.

Use Value: Low Q_g and R_DS(on) minimize total power loss (<1.5 W), while bottom-side thermal path maintains T_J < 110°C under full load.

Use Scenario: 24 V input to 5 V/20 A isolated auxiliary supply in PLC backplane modules.

IC Role / Device Role: Synchronous rectifier in secondary-side buck converter with integrated controller.

Use Value: Fast t_rr and low V_SD reduce body diode conduction loss by >40% vs. discrete Schottky, improving efficiency from 92% to 94.5%.

Automotive ADAS Camera Module

Telecom Base Station PSU

Use Scenario: Compact 12 V → 3.3 V/5 A power rail for image sensor and ISP in rear-view camera ECU.

IC Role / Device Role: Low-profile control switch with strict height constraint (<0.9 mm).

Use Value: PQFN 5×6 package meets 0.85 mm max height spec while delivering 79 A capability, enabling single-MOSFET solution instead of paralleled SO-8 devices.

Use Scenario: 48 V → 12 V intermediate bus converter in 5G remote radio unit (RRU) power system.

IC Role / Device Role: Primary-side high-side switch in interleaved two-phase buck design.

Use Value: Matched R_DS(on) and Q_g across units ensures balanced current sharing; MSL1 rating supports automated optical inspection (AOI) after reflow.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
ON Semiconductor NTMFS5C675NL	R_DS(on) = 4.0 mΩ @ 10 V, Q_g = 18.5 nC, same PQFN 5×6 package	Slightly higher gate charge increases driver loss; identical thermal footprint	Preferred where tighter R_DS(on) tolerance (±10%) is required over Q_g minimization
Vishay SiR626DP	R_DS(on) = 4.2 mΩ @ 10 V, Q_g = 14.5 nC, R_θJC = 3.0 °C/W	Lower Q_g improves light-load efficiency; 0.3 °C/W higher thermal resistance limits peak power	Optimal for high-frequency, low-duty-cycle applications where gate loss dominates

Compared with NTMFS5C675NL and SiR626DP, IRFH5304TRPBF offers the best balance of ultra-low R_DS(on), industry-leading R_θJC, and verified MSL1 reliability-making it ideal for thermally constrained, high-current buck stages requiring long-term field stability.

Availability

IRFH5304TRPBF is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and automotive ADAS power supplies requiring stable component supply, MSL1-compliant SMT assembly, and validated thermal performance up to 79 A continuous current.

Supply support for IRFH5304TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with core expertise in silicon and wide-bandgap device physics.

The StrongIRFET™ product line targets high-efficiency, high-power-density DC-DC conversion in datacenter, telecom, and industrial systems-emphasizing low R_DS(on), fast switching, and robust thermal packaging.

FAQ

What is the maximum continuous drain current for IRFH5304TRPBF at 100°C case temperature?

The maximum continuous drain current is 50 A when the case temperature (T_c) is maintained at 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the PQFN 5×6 package and assumes proper PCB thermal design with adequate copper area and vias to sustain R_θJC = 2.7 °C/W.

Does IRFH5304TRPBF support 4.5 V gate drive in practical applications?

Yes-its gate threshold voltage range (1.35–2.35 V) and R_DS(on) = 5.8 mΩ (max) at V_GS = 4.5 V ensure full enhancement with standard 3.3 V or 4.5 V logic-level drivers. However, conduction loss increases ~50% versus 10 V drive, so 4.5 V operation is recommended only where gate drive voltage is constrained.

How many thermal vias are recommended for the exposed drain pad?

Infineon's AN-1136 recommends ≥8 thermal vias (0.3 mm diameter, 0.5 mm pitch) connecting the exposed drain pad to inner-layer and backside ground planes. This configuration achieves the specified R_θJC(bottom) = 2.7 °C/W and prevents localized hot spots during 79 A continuous operation.

Is IRFH5304TRPBF suitable for avalanche-rated applications?

No-while it specifies E_AS = 46 mJ (single-pulse), this device is not characterized or guaranteed for repetitive avalanche operation. Its datasheet does not define repetitive avalanche ratings, SOA curves, or test conditions beyond single-pulse energy. For designs requiring sustained avalanche capability, a dedicated avalanche-rated MOSFET should be selected.

IRFH5304TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 22A (Ta), 79A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 4.5mOhm @ 47A, 10V

Vgs(th) (Max) @ Id:: 2.35V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2360 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 46W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH5304TRPBF FAQ

1.How can I place an order for IRFH5304TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5304TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5304TRPBF reliable?

The price and inventory of IRFH5304TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5304TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH5304TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5304TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5304TRPBF?

IRFH5304TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5304TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5304TRPBF?

For technical support, including IRFH5304TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5304TRPBF requirements.

6.How does Aetrix verify that IRFH5304TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH5304TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5304TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH5304TRPBF?

All IRFH5304TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5304TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5304TRPBF part is unused and in its original packaging.

Return procedure for IRFH5304TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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