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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5406TR2PBF

Name: IRFH5406TR2PBF
Brand: Infineon Technologies
SKU: IRFH5406TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5406TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH5406TR2PBF.pdf

Description:: MOSFET N-CH 60V 40A 5X6 PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:9,287

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Product details

Overview

IRFH5406TR2PBF from Infineon Technologies (formerly International Rectifier) is a 60 V, 40 A N-channel enhancement-mode HEXFET Power MOSFET in a PQFN 5×6 mm package with 14.4 mΩ R_DS(on) at V_GS = 10 V, optimized for high-efficiency secondary-side synchronous rectification and DC-DC brick applications requiring low conduction loss and high power density.

For engineers reviewing the IRFH5406TR2PBF datasheet, IRFH5406TR2PBF pinout, IRFH5406TR2PBF application, or IRFH5406TR2PBF equivalent, key selection criteria include verified R_DS(on) ≤14.4 mΩ at 10 V, Q_g = 21 nC, thermal resistance R_θJC(Bottom) = 2.7 °C/W, industry-standard pinout compatibility, and MSL1 industrial qualification.

Technical Context

This device operates as a unidirectional voltage-controlled switch with gate threshold voltage V_GS(th) = 2.0–4.0 V and exhibits avalanche-rated ruggedness (E_AS = 200 mJ at I_D = 24 A). Its low-profile PQFN package enables direct bottom-side thermal coupling to PCB copper, supporting high-current switching in space-constrained DC-DC converters.

The MOSFET features fast switching dynamics (t_d(on) = 5.4 ns, t_f = 3.5 ns), low output capacitance (C_oss = 206 pF), and integrated body diode with V_SD = 1.3 V and Q_rr = 74–111 nC - critical for minimizing reverse-recovery losses in synchronous rectifier topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports input/output rails up to 48 V nominal systems with margin for transients
R_DS(on) max @ V_GS = 10 V	14.4 mΩ - limits conduction loss to ≤13.8 W at 40 A continuous drain current
Q_g typical	21 nC - determines gate drive energy requirement and influences switching loss in hard-switched topologies
R_θJC(Bottom)	2.7 °C/W - enables >30 W dissipation with ≤81 °C junction rise above 25 °C PCB temperature
I_D @ T_C(Bottom) = 25 °C	40 A - defines maximum continuous current under ideal board-level thermal management
V_GS(th)	2.0–4.0 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level gate drivers
C_iss	1256 pF - impacts gate drive loop stability and Miller effect during high-dV/dt transitions

Pinout & Package

PQFN 5×6 mm package with exposed drain pad on bottom surface for enhanced thermal conduction; 3-terminal configuration (Drain, Source, Gate) with standard industry pinout orientation (Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source).

Pin/Terminal	Circuit Role	Design Meaning
Gate (Pin 1)	Control terminal	Receives voltage signal to modulate channel conductivity; requires <21 nC charge for full enhancement
Drain (Pin 2)	High-side current path	Connected to switched rail; electrically tied to exposed bottom thermal pad for heat transfer
Source (Pin 3)	Reference/return path	Serves as common reference for gate drive and load return; forms body diode anode

Key Features

Feature	Design Value
Low R_DS(on)	14.4 mΩ max at 10 V enables ≥95% efficiency in 12–48 V synchronous buck converters at 20–40 A
Low-profile PQFN	0.9 mm height allows integration into ultra-thin DC-DC modules without airflow obstruction
100% R_G tested	Guarantees gate resistance ≤1.1 Ω, ensuring consistent switching speed and reduced gate oscillation risk
MSL1 rating	Enables single-reflow assembly without moisture sensitivity concerns in high-volume manufacturing
Industry-standard pinout	Ensures drop-in replacement capability across multiple vendors' 5×6 PQFN MOSFETs

Applications

Secondary-Side Synchronous Rectification

DC-DC Brick Converters

Use Scenario: Replacing Schottky diodes in isolated forward/flyback secondary windings of telecom and server PSUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch controlled by transformer-coupled or controller-driven gate signal.

Use Value: Reduces conduction loss by >40% vs. 40 V Schottky, improving full-load efficiency from 92% to ≥94.5% at 48 V input.

Use Scenario: Output-stage power switch in compact 1/4-brick and 1/8-brick isolated DC-DC modules.

IC Role / Device Role / Timing Role: Primary-side high-frequency switching element in phase-shifted full-bridge or LLC resonant topologies.

Use Value: Enables 300 W+ output in <1 in³ volume due to 2.7 °C/W R_θJC and 40 A continuous rating at 25 °C case.

Inverter Motor Drives

Boost Converters

Use Scenario: Half-bridge leg in low-voltage (<60 V) brushed DC motor inverters for robotics and industrial actuators.

IC Role / Device Role / Timing Role: High-side or low-side PWM-controlled power switch with integrated body diode conducting freewheeling current.

Use Value: Supports 24 V/30 A motor loads with <1.3 V body diode forward drop and 20–30 ns reverse recovery time.

Use Scenario: Main switching FET in high-current boost PFC stages for LED drivers and battery chargers.

IC Role / Device Role / Timing Role: Unidirectional switch in boost inductor discharge path; handles high peak currents and repetitive avalanche stress.

Use Value: Withstands 200 mJ single-pulse avalanche energy, enabling robust operation during line surges and soft-start overcurrent events.

Availability

IRFH5406TR2PBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick converters, and motor inverter applications requiring stable component supply, tight R_DS(on) distribution, and MSL1 reflow compatibility.

Supply support for IRFH5406TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and energy-efficient systems.

This MOSFET belongs to Infineon's OptiMOS™-T2 generation (legacy HEXFET family), engineered specifically for high-frequency, high-efficiency power conversion in server, telecom, and industrial DC-DC applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C(Bottom) = 100 °C, the maximum continuous drain current is 16 A per the absolute maximum ratings table. This derating reflects thermal limits imposed by R_θJC = 2.7 °C/W and junction temperature ceiling of 150 °C, ensuring safe operation under sustained high-power conditions.

Does IRFH5406TR2PBF have avalanche capability, and how is it rated?

Yes - it is fully specified for unclamped inductive switching with E_AS = 200 mJ at I_D = 24 A and T_J = 25 °C. The device undergoes 100% avalanche testing during production, making it suitable for boost converters and flyback snubber circuits where transient overvoltage may occur.

Can this MOSFET be driven directly by a 3.3 V microcontroller GPIO?

No - its V_GS(th) range is 2.0–4.0 V, but full enhancement requires ≥10 V for R_DS(on) ≤14.4 mΩ. A 3.3 V drive yields only partial turn-on (R_DS(on) >100 mΩ), causing excessive heating. A dedicated gate driver or level-shifting circuit is required for reliable operation.

What is the recommended PCB layout for thermal performance?

Maximize copper area under the exposed drain pad using ≥4 thermal vias (0.3 mm diameter, 0.6 mm pitch) connected to inner-layer ground or power planes. Maintain ≥0.5 mm clearance between gate trace and high-dV/dt nodes, and use a 10–22 Ω gate resistor to dampen ringing while preserving 5.4 ns turn-on delay.

IRFH5406TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 14.4mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1256 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH5406TR2PBF FAQ

1.How can I place an order for IRFH5406TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5406TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5406TR2PBF reliable?

The price and inventory of IRFH5406TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5406TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH5406TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5406TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5406TR2PBF?

IRFH5406TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5406TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5406TR2PBF?

For technical support, including IRFH5406TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5406TR2PBF requirements.

6.How does Aetrix verify that IRFH5406TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH5406TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5406TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH5406TR2PBF?

All IRFH5406TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5406TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5406TR2PBF part is unused and in its original packaging.

Return procedure for IRFH5406TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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