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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH5406TRPBF

Name: IRFH5406TRPBF
Brand: Infineon Technologies
SKU: IRFH5406TRPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH5406TRPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH5406TRPBF.pdf

Description:: MOSFET N-CH 60V 11A/40A 8PQFN

Quantity:: RFQ Add To RFQ list

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Inventory:8,650

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Product details

Overview

IRFH5406TRPBF from Infineon Technologies is a 60 V, 40 A N-channel enhancement-mode HEXFET Power MOSFET in a PQFN 5×6 mm package with 14.4 mΩ R_DS(on) at V_GS = 10 V, 21 nC total gate charge, and 2.7 °C/W junction-to-case (bottom) thermal resistance-designed for high-efficiency secondary-side synchronous rectification in DC-DC bricks and boost converters.

For engineers reviewing the IRFH5406TRPBF datasheet, IRFH5406TRPBF pinout, IRFH5406TRPBF application, or IRFH5406TRPBF equivalent, key selection criteria include low conduction loss (R_DS(on) ≤ 14.4 mΩ), fast switching (Q_gd = 6.5 nC, t_f = 3.5 ns), industry-standard PQFN pinout compatibility, and MSL1 industrial qualification for reliable surface-mount manufacturing.

Technical Context

This MOSFET employs a trench-gate silicon process optimized for low R_DS(on) and reduced gate charge, enabling high-frequency operation in hard-switched topologies. Its 1.1 Ω gate resistance and 92 pF Crss support controlled dv/dt and EMI management in synchronous rectifier and motor drive stages.

The device integrates a robust body diode with 1.3 V forward voltage at 24 A and 74–111 nC reverse recovery charge, supporting unclamped inductive switching up to 200 mJ single-pulse avalanche energy at I_AS = 24 A-critical for overcurrent robustness in DC motor inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 48 V bus systems with 20 % margin for transients
R_DS(on) max @ V_GS = 10 V	14.4 mΩ - enables <1.2 W conduction loss at 24 A continuous drain current
Q_g typical	21 nC - determines gate driver power requirement and switching speed trade-off
R_θJC (bottom)	2.7 °C/W - allows direct PCB copper thermal path for >40 W power dissipation at ΔT = 100 °C
I_D @ T_C(bottom) = 25 °C	40 A - defines maximum continuous current under ideal heatsinking conditions
V_GS(th)	2.0–4.0 V - ensures clean turn-on with standard 3.3 V or 5 V logic-level gate drivers
C_iss	1256 pF - influences high-frequency input impedance and gate drive loop stability

Pinout & Package

IRFH5406TRPBF uses a 8-pin PQFN 5×6 mm package with exposed bottom thermal pad. Pin 1 is marked by a dot; pins are arranged in two rows (G-S-D-D-D-D-S-G) with source and gate terminals on opposing edges for optimal layout symmetry and thermal routing.

Pin/Terminal	Circuit Role	Design Meaning
1, 8	Gate	Low-impedance control input; requires <21 nC charge for full enhancement
2, 3, 4, 5, 6, 7	Drain	High-current power output node; internally paralleled for low R_DS(on)
Exposed Pad	Source	Primary thermal and electrical return path; must be soldered to large PCB copper area

Key Features

Feature	Design Value
Low-profile PQFN 5×6 mm	0.9 mm height enables compact power modules and stacked board designs
100% R_G tested	Guarantees gate resistance ≤1.1 Ω for consistent switching timing across production lots
MSL1 industrial qualification	Supports reflow without moisture sensitivity concerns-no baking required pre-assembly
RoHS-compliant, halogen-free	Meets IPC-J-STD-020D and JEDEC JESD22-A110 for environmental compliance

Applications

Secondary Side Synchronous Rectification

DC-DC Brick Converters

Use Scenario: Replaces Schottky diodes in isolated 12 V/48 V output stages of telecom and server power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch operating at 200–500 kHz with zero-voltage switching (ZVS) assist.

Use Value: Reduces conduction loss by >40 % vs. 40 V Schottky, improving efficiency from 92 % to 94.5 % at full load.

Use Scenario: High-density 300–600 W brick modules requiring minimal footprint and thermal overhead.

IC Role / Device Role / Timing Role: Primary-side high-side switch in half-bridge topology with 100 ns dead-time control.

Use Value: Enables 5×6 mm layout with 40 A current handling and 2.7 °C/W thermal path to PCB, eliminating external heatsinks.

Inverters for DC Motors

Boost Converters

Use Scenario: H-bridge leg in 24–48 V brushed DC motor drives for industrial automation and robotics.

IC Role / Device Role / Timing Role: Low-side switching element with integrated body diode conducting freewheeling current during PWM off-time.

Use Value: 1.3 V V_SD and 74 nC Q_rr minimize diode conduction loss and switching overshoot during commutation.

Use Scenario: Step-up stage in battery-powered equipment (e.g., 12 V input → 24 V output) for LED drivers and sensors.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) with 60 V blocking capability.

Use Value: 14.4 mΩ R_DS(on) limits boost-stage resistive loss to <0.8 W at 20 A, sustaining >95 % peak efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTP40N10P	TO-220 package, higher R_DS(on) (12.5 mΩ), no PQFN thermal pad	Requires external heatsink; unsuitable for ultra-thin or high-density layouts	Prefer when through-hole assembly or legacy footprint compatibility is required
SiR626DP	60 V, 12.5 mΩ, 18 nC Q_g, same PQFN 5×6 mm footprint	Lower gate charge improves switching efficiency above 300 kHz but has lower I_D rating (32 A)	Prefer for high-frequency (>400 kHz) boost or LLC resonant converters where gate drive loss dominates

Compared with IXTP40N10P and SiR626DP, IRFH5406TRPBF delivers the best balance of high current (40 A), low thermal resistance (2.7 °C/W), and industry-standard PQFN pinout-making it optimal for space-constrained, thermally demanding synchronous rectification and DC-DC brick designs.

Availability

IRFH5406TRPBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick converters, DC motor inverters, and boost converter applications requiring stable component supply, long-term lifecycle assurance, and MSL1-compatible surface-mount processing.

Supply support for IRFH5406TRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon MOSFETs and wide-bandgap devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial, telecom, and computing infrastructure-emphasizing low R_DS(on), fast switching, and robust thermal performance.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

At T_C(bottom) = 100°C, the maximum continuous drain current is 16 A per the Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the 2.7 °C/W R_θJC and ambient cooling capability-designers must ensure PCB copper area and airflow maintain case temperature below this threshold for sustained operation.

Does IRFH5406TRPBF support logic-level gate drive?

No-it requires ≥4.5 V V_GS for full enhancement, with V_GS(th) specified from 2.0 V to 4.0 V. While it can turn on with 3.3 V logic, R_DS(on) rises significantly above 14.4 mΩ; a 5 V or 10 V gate driver is recommended to achieve rated conduction performance and switching speed.

How is the exposed thermal pad electrically connected?

The exposed pad is internally connected to the source terminal and must be soldered to a PCB copper pour tied to the system ground plane. It serves both as the primary thermal conduction path and as an electrical return-floating or insulated mounting degrades thermal performance and may cause reliability failure due to localized overheating.

Is IRFH5406TRPBF suitable for avalanche-rated operation?

Yes-its 200 mJ single-pulse avalanche energy rating at I_AS = 24 A supports unclamped inductive switching in motor drive and relay driving applications. However, repetitive avalanche operation is not guaranteed; designers must verify stress levels using the SOA curves in Figure 8 and limit pulse duty cycle per the transient thermal impedance curve in Figure 11.

IRFH5406TRPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: 8-PowerVDFN

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Ta), 40A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 14.4mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 4V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1256 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 3.6W (Ta), 46W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH5406TRPBF FAQ

1.How can I place an order for IRFH5406TRPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH5406TRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH5406TRPBF reliable?

The price and inventory of IRFH5406TRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH5406TRPBF is usually 5 days.

3.What payment methods are accepted for IRFH5406TRPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH5406TRPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH5406TRPBF?

IRFH5406TRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH5406TRPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH5406TRPBF?

For technical support, including IRFH5406TRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH5406TRPBF requirements.

6.How does Aetrix verify that IRFH5406TRPBF is sourced from the original manufacturer or authorized distributors?

All IRFH5406TRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH5406TRPBF meets industry standards.

7.What is the process for return or replacement of IRFH5406TRPBF?

All IRFH5406TRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH5406TRPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH5406TRPBF part is unused and in its original packaging.

Return procedure for IRFH5406TRPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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