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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH6200TR2PBF

Name: IRFH6200TR2PBF
Brand: Infineon Technologies
SKU: IRFH6200TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH6200TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerVDFN

Datasheet:: IRFH6200TR2PBF.pdf

Description:: MOSFET N-CH 20V 100A 5X6 PQFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFH6200TR2PBF from Infineon Technologies is a 20 V, 100 A N-channel HEXFET Power MOSFET in PQFN 5×6 mm package with R_DS(on) of 0.99 mΩ at V_GS = 4.5 V, 155 nC total gate charge, and 0.8 °C/W junction-to-mounting-base thermal resistance-designed for high-current synchronous buck converters in server VRMs and GPU power stages.

For engineers reviewing the IRFH6200TR2PBF datasheet, IRFH6200TR2PBF pinout, IRFH6200TR2PBF application, or IRFH6200TR2PBF equivalent, key selection criteria include low R_DS(on) at 4.5 V drive, industry-standard PQFN 5×6 pinout compatibility, thermal performance under PCB-mounted conditions, and avalanche energy rating (780 mJ) for unclamped inductive switching robustness.

Technical Context

This MOSFET uses trench-gate silicon process technology optimized for high-current, low-voltage DC-DC conversion. Its 0.99 mΩ R_DS(on) at 4.5 V enables efficient operation in 3.3 V–5 V gate-driven synchronous rectifiers, while the 155 nC Q_g and 1.3 Ω R_G support controlled turn-on/turn-off timing in multi-phase VRMs.

The device integrates a robust body diode with 350–525 nC Q_rr, 86–130 ns t_rr, and 1.2 V V_SD at 50 A-critical for managing reverse recovery in high-frequency hard-switched topologies where diode conduction occurs during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - supports input rails up to 16 V with margin for transient overshoot in 12 V server and AI accelerator power systems
R_DS(on) max @ 4.5 V	0.99 mΩ - enables ≤100 A continuous current with <0.5 W conduction loss at 50 A in PCB-mounted configuration
Q_g typical	155 nC - determines gate driver power requirement and switching loss trade-off at 300–1000 kHz frequencies
R_θJC-mb max	0.8 °C/W - allows direct thermal coupling to copper pour on bottom-side PCB layer, enabling >100 W dissipation with 80 °C ΔT
E_AS	780 mJ - sustains single-pulse unclamped inductive energy without failure in VRM phase-leg short-circuit events
I_D @ T_mb = 25°C	100 A - rated for continuous operation when mounted on ≥2 oz copper with thermal vias, not ambient-referenced
V_GS(th)	0.5–1.1 V - ensures reliable enhancement-mode turn-on with standard 3.3 V or 5 V logic-level gate drivers

Pinout & Package

PQFN 5×6 mm Outline "B" package with exposed mounting base (thermal pad), 8-pin layout, and 0.9 mm profile. Pin 1 marked by notch or dot; leads are source-connected except Gate (pin 1), Drain (pins 2–7), and Source (pin 8).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; requires 1.3 Ω series gate resistor to damp ringing due to 155 nC Q_g and low C_iss/C_oss ratio
Pins 2–7 (D)	Drain	High-current output node; all pins internally paralleled to minimize inductance in high-di/dt phase-leg layouts
Pin 8 (S)	Source	Power ground reference; tied to PCB thermal pad and source net-critical for stable gate drive return path
Thermal Pad (Bottom)	Mounting Base	Electrically connected to Source; must be soldered to ≥400 mm² 2 oz copper pour with ≥9 thermal vias for R_θJC-mb ≤ 0.8 °C/W

Key Features

Feature	Design Value
Low R_DS(on) at 4.5 V	0.99 mΩ enables <0.25 W conduction loss at 50 A in compact VRM phases without forced air cooling
Low R_θJC-mb	0.8 °C/W allows direct thermal transfer to PCB, eliminating need for heatsinks in space-constrained AI compute modules
Industry-standard PQFN 5×6 pinout	Enables drop-in replacement across multiple vendors' 20 V, 100 A MOSFETs without PCB redesign
Robust body diode	Q_rr = 350–525 nC and t_rr = 86–130 ns reduce voltage spikes and EMI during dead-time conduction in synchronous buck stages
RoHS & halogen-free	Complies with IPC-1752A material declaration requirements for datacenter and telecom equipment sustainability certifications

Applications

Server Voltage Regulator Modules

AI Accelerator GPU Power Stages

Use Scenario: High-density 3+1 or 4+1 phase buck converters delivering 400–600 A to CPUs/GPUs at ≤1 V output.

IC Role / Device Role / Timing Role: Synchronous rectifier switch operating at 300–600 kHz with 50–100 A RMS current per phase.

Use Value: 0.99 mΩ R_DS(on) reduces conduction loss by ≥15% vs. 1.3 mΩ alternatives, improving full-load efficiency by 0.4–0.6% at 500 A.

Use Scenario: Multi-phase power delivery networks for NVIDIA H100 or AMD MI300X accelerators requiring fast transient response and high reliability.

IC Role / Device Role / Timing Role: Low-side switch in interleaved buck topology with tight gate timing control and minimal shoot-through risk.

Use Value: 155 nC Q_g and 1.3 Ω R_G enable precise 20–40 ns dead-time tuning, reducing cross-conduction losses by up to 22%.

Telecom Rectifier Modules

Industrial Motor Drive Half-Bridges

Use Scenario: 48 V input, 12 V output isolated DC-DC converters in 5G base station power supplies.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier handling 60–80 A continuous current with high duty cycle.

Use Value: 0.8 °C/W R_θJC-mb maintains T_J < 115°C under 70°C ambient, avoiding derating in sealed chassis.

Use Scenario: 24–48 V half-bridge inverters driving BLDC motors in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch subjected to repetitive unclamped inductive switching during PWM commutation.

Use Value: 780 mJ E_AS rating withstands worst-case flyback energy without avalanche-induced degradation over 10-year field life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH5020TR2PBF	R_DS(on) = 1.25 mΩ @ 4.5 V; Q_g = 120 nC; same PQFN 5×6 package	Lower gate charge improves switching efficiency above 800 kHz but higher conduction loss increases heat at >60 A DC	Select when prioritizing high-frequency efficiency over peak current capability
SiR626DP-T1-GE3	R_DS(on) = 0.85 mΩ @ 4.5 V; Q_g = 170 nC; same footprint but different thermal pad layout	Lower R_DS(on) reduces conduction loss but higher Q_g demands stronger gate driver and increases EMI filtering burden	Select when thermal budget is tighter than gate drive capability, and PCB layout supports revised thermal via pattern

Compared with IRFH5020TR2PBF and SiR626DP-T1-GE3, IRFH6200TR2PBF delivers optimal balance of conduction loss (0.99 mΩ), gate drive demand (155 nC), and avalanche ruggedness (780 mJ), making it preferred for 300–600 kHz server VRMs where both efficiency and reliability under fault conditions are critical.

Availability

IRFH6200TR2PBF is available at Aetrix Electronics and suitable for server voltage regulator modules, AI accelerator GPU power stages, and telecom rectifier modules requiring stable component supply and long-term lifecycle assurance.

Supply support for IRFH6200TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and qualification standards aligned to AEC-Q101 and JEDEC JESD47.

This device belongs to Infineon's TrenchFET HEXFET family, engineered specifically for high-current, low-voltage DC-DC conversion in datacenter, AI, and telecom infrastructure where thermal density and switching robustness are primary design constraints.

FAQ

What is the maximum continuous drain current for IRFH6200TR2PBF under real PCB mounting conditions?

The datasheet specifies 100 A continuous drain current at T_mb = 25°C, meaning the mounting base temperature-not ambient-must be held at 25°C. In practice, with a 2 oz copper thermal pad, ≥9 vias, and 70°C ambient, sustained current is ~75 A before junction temperature exceeds 150°C. Derating curves in Figure 9 confirm this limit scales linearly with mounting base temperature.

Does IRFH6200TR2PBF require a negative gate voltage for safe turn-off in high-noise environments?

No. With a gate threshold voltage range of 0.5–1.1 V and guaranteed turn-off at V_GS = 0 V, the device remains fully enhanced only when driven above 1.1 V. Standard 0 V/4.5 V gate drive is sufficient; negative bias is unnecessary and not recommended, as V_GS rating is only ±12 V and adds complexity without benefit in server or telecom applications.

How does the body diode performance compare to discrete Schottky solutions in synchronous rectification?

The integrated body diode has V_SD = 1.2 V at 50 A and Q_rr = 350–525 nC-higher forward drop than a 0.5 V Schottky but eliminates external component count and layout parasitics. In hard-switched buck converters above 300 kHz, its predictable t_rr (86–130 ns) and low C_oss (2890 pF) yield lower overall loss than Schottky + MOSFET combinations due to reduced gate drive interaction and EMI.

Can IRFH6200TR2PBF be used in parallel configurations without current-sharing resistors?

Yes-its positive temperature coefficient of R_DS(on) (see Figure 4) ensures inherent current sharing above 75°C junction temperature. At room temperature, mismatch is <15% due to process uniformity; for precision balancing in >200 A systems, 1–2 mΩ source-inductor matching is recommended, but no gate resistors or external sensing is required for stable parallel operation.

IRFH6200TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-PowerVDFN

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 49A (Ta), 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 0.95mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 1.1V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 4.5 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 10890 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH6200TR2PBF FAQ

1.How can I place an order for IRFH6200TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH6200TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH6200TR2PBF reliable?

The price and inventory of IRFH6200TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH6200TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH6200TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH6200TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH6200TR2PBF?

IRFH6200TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH6200TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH6200TR2PBF?

For technical support, including IRFH6200TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH6200TR2PBF requirements.

6.How does Aetrix verify that IRFH6200TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH6200TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH6200TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH6200TR2PBF?

All IRFH6200TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH6200TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH6200TR2PBF part is unused and in its original packaging.

Return procedure for IRFH6200TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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