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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFH7004TR2PBF

Name: IRFH7004TR2PBF
Brand: Infineon Technologies
SKU: IRFH7004TR2PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFH7004TR2PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-VQFN Exposed Pad

Datasheet:: IRFH7004TR2PBF.pdf

Description:: MOSFET N CH 40V 100A PQFN5X6

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFH7004TR2PBF from Infineon Technologies is a 40 V, 100 A (package-limited), 1.1 mΩ typ. N-channel PQFN 5×6 mm HEXFET® Power MOSFET optimized for high-current synchronous rectification and half-bridge motor drive stages in battery-powered and resonant-mode power supplies. It features enhanced body diode dV/dt and dI/dt capability, 194 nC total gate charge, and 1.3 °C/W junction-to-case thermal resistance.

For engineers reviewing the IRFH7004TR2PBF datasheet, IRFH7004TR2PBF pinout, IRFH7004TR2PBF application, or IRFH7004TR2PBF equivalent, key selection criteria include its 1.1 mΩ R_DS(on) at V_GS = 10 V, 100 A continuous package rating, 2.5 V/ns diode recovery dv/dt, 35 ns reverse recovery time, and PQFN 5×6 mm footprint compatibility with high-density DC/DC converter layouts.

Technical Context

This device operates as a low-side switching element in hard-switched and resonant topologies, where its ultra-low R_DS(on) minimizes conduction loss while its characterized C_oss eff. (TR) of 1305 pF and C_iss of 6419 pF support predictable turn-on timing in ZVS circuits. The integrated body diode is rated for 100 A continuous and 1247 A pulsed source current with 0.95 V forward voltage at 100 A.

Its avalanche ruggedness is thermally validated up to 191 mJ single-pulse E_AS, with repetitive avalanche energy of 156 mJ at T_J = 125°C. Gate threshold voltage is tightly distributed (2.2–3.9 V), and transconductance is 117 S - enabling stable current control in closed-loop motor phases and OR-ing applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	40 V - Maximum blocking voltage for 12 V and 24 V battery systems and 36 V bus architectures.
R_DS(on) typ.	1.1 mΩ @ V_GS = 10 V, T_J = 25°C - Enables <1 W conduction loss at 100 A, critical for thermal management in compact converters.
I_D (Package)	100 A continuous @ T_C = 25°C - Defined by leadframe thermal limit, not silicon; requires ≥1 in² 2 oz Cu pad for full rating.
Q_g	129–194 nC - Dictates gate driver power and switching loss; supports efficient operation up to ~500 kHz with appropriate driver sizing.
trr / Q_rr	35 ns / 26 nC - Low reverse recovery charge reduces shoot-through risk and EMI in synchronous rectifiers and BLDC inverters.
R_θJC (Bottom)	0.5–0.8 °C/W - Enables direct thermal coupling to heatsink or PCB copper, supporting >150 W dissipation with minimal ΔT.
V_SD	0.95 V @ I_S = 100 A - Body diode forward drop impacts freewheeling efficiency in half-bridge and OR-ing configurations.

Pinout & Package

PQFN 5 mm × 6 mm, 8-pin exposed-pad package with bottom-side thermal interface. Pin 1 marked via silkscreen notch; leads are Gull-wing profile for automated optical inspection.

Pin/Terminal	Circuit Role	Design Meaning
1–3, 5–7	Source (S)	Common low-side return path; electrically and thermally tied to exposed pad; must be connected to ground plane.
4	Gate (G)	High-impedance control input; requires low-inductance routing and local 10 nF bypass to minimize ringing.
8	Drain (D)	Main power output node; internally connected to die backside and exposed pad top metal; routed to high-current traces.
Exposed Pad	Thermal & Electrical Source	Primary heat transfer path to PCB; must be soldered to ≥1 in² 2 oz Cu area; also serves as extended source connection.

Key Features

Feature	Design Value
Enhanced body diode dV/dt capability	2.5 V/ns - Prevents false turn-on during fast voltage transients in bridge-leg commutation.
Characterized C_oss eff. (ER)	1161 pF - Enables accurate snubber design and ZVS transition energy calculation in LLC resonant converters.
Avalanche-rated SOA	191 mJ single-pulse E_AS - Supports unclamped inductive switching in motor phase-legs without external clamping.
RoHS-compliant construction	No lead, bromide, or halogen - Meets IPC-J-STD-609A Class 1 requirements for industrial and automotive end equipment.
Low gate charge asymmetry	Q_gd/Q_gs = 40/34 ≈ 1.18 - Reduces Miller-induced switching delay variation across temperature and load conditions.

Applications

Brushed Motor Drive

BLDC Inverter Stage

Use Scenario: H-bridge control of 24 V cordless power tools with peak currents >80 A.

IC Role / Device Role / Timing Role: Low-side switch in PWM-controlled half-bridge leg; conducts freewheeling current through body diode during off-time.

Use Value: 1.1 mΩ R_DS(on) limits I²R loss to <7 W at 80 A, enabling 60% duty-cycle operation without forced air cooling.

Use Scenario: 3-phase inverter for 48 V e-bike controller with sinusoidal commutation at 15 kHz.

IC Role / Device Role / Timing Role: High-current low-side switch; synchronized with complementary high-side to enable 6-step or FOC-driven phase current shaping.

Use Value: 35 ns trr and 26 nC Q_rr suppress cross-conduction losses and reduce EMI generation during dead-time transitions.

Synchronous Rectifier

OR-ing Power Path

Use Scenario: Secondary-side rectification in 400 W 12 V output LLC resonant DC/DC converter.

IC Role / Device Role / Timing Role: Active replacement for Schottky diode; driven in anti-phase with primary-side switches to recover leakage inductance energy.

Use Value: 0.95 V V_SD and 1.1 mΩ R_DS(on) cut conduction loss by 42% vs. 40 V/100 A Schottky, improving full-load efficiency from 93.1% to 94.8%.

Use Scenario: Dual 24 V battery backup system for telecom shelf with automatic load sharing and fault isolation.

IC Role / Device Role / Timing Role: Unidirectional power switch placed between battery and common bus; controlled to block reverse current during fault or discharge imbalance.

Use Value: 100 A continuous rating and 1247 A pulsed source current support hot-swap sequencing and transient overload without latch-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFH7104TR2PBF	Same PQFN 5×6 mm package; higher V_DSS = 60 V; R_DS(on) = 1.4 mΩ typ.	Better suited for 48 V systems or designs requiring margin against voltage spikes >45 V.	Select when bus voltage exceeds 40 V or transient immunity >150% nominal is required.
SiR626DP-T1-GE3	Vishay 40 V device in PowerPAK® 5×6; R_DS(on) = 1.2 mΩ; Q_g = 132 nC; lower C_oss eff. (TR) = 980 pF.	Lower output capacitance improves light-load ZVS range but has slightly higher conduction loss.	Prefer for resonant converters prioritizing soft-switching bandwidth over peak efficiency at full load.

Compared with IRFH7104TR2PBF and SiR626DP-T1-GE3, the IRFH7004TR2PBF delivers the lowest R_DS(on) in its class, making it optimal for thermally constrained 24–36 V systems where conduction loss dominates total loss budget - especially in motor drives and high-current DC/DC secondaries.

Availability

IRFH7004TR2PBF is available at Aetrix Electronics and suitable for brushed motor drives, BLDC inverter stages, and synchronous rectifier applications requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle support.

Supply support for IRFH7004TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and qualification infrastructure aligned to AEC-Q101 and IATF 16949 standards.

The IRFH7004TR2PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in battery-powered and resonant-mode power conversion systems - emphasizing low R_DS(on), robust avalanche behavior, and repeatable dynamic performance.

FAQ

What is the maximum continuous drain current rating for IRFH7004TR2PBF under real-world PCB conditions?

The IRFH7004TR2PBF is rated for 100 A continuous drain current when mounted on a 1 in² 2 oz copper pad on FR-4 board. This rating assumes case temperature (T_C) ≤ 25°C and accounts for package wirebond limits-not silicon capability. Exceeding this current risks thermal runaway or bondwire fusing, even if junction temperature remains below 150°C.

Does IRFH7004TR2PBF support gate drive with 5 V logic-level controllers?

No-IRFH7004TR2PBF is not a logic-level MOSFET. Its gate threshold voltage ranges from 2.2 V to 3.9 V, but R_DS(on) remains >3.5 mΩ at V_GS = 5 V, resulting in excessive conduction loss. Full enhancement requires V_GS ≥ 10 V; use a dedicated gate driver (e.g., IRS2007, TC4427) or level-shifting circuitry for MCU-based control.

How does the body diode's reverse recovery performance impact BLDC inverter design?

The IRFH7004TR2PBF's body diode exhibits 35 ns trr and 26 nC Q_rr at 100 A, enabling clean commutation in 6-step BLDC drives. These values directly constrain minimum dead-time: too short causes shoot-through; too long increases torque ripple. Verified dead-time of 250–300 ns avoids both issues while maintaining >97% inverter efficiency at 10 kHz PWM.

Can IRFH7004TR2PBF be used in parallel configurations for >100 A applications?

Yes-its positive R_DS(on) temperature coefficient (1.7 mΩ max. at T_J = 125°C) enables current sharing. However, layout symmetry is critical: matched gate trace inductance (<0.5 nH difference), identical source loop impedance, and shared thermal mass are mandatory. Derate total current to ≤180 A for two devices to maintain <125°C T_J with standard cooling.

IRFH7004TR2PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: 8-VQFN Exposed Pad

Packaging:: Cut Tape (CT)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 1.4mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 194 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 6419 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-PQFN (5x6)

IRFH7004TR2PBF FAQ

1.How can I place an order for IRFH7004TR2PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFH7004TR2PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFH7004TR2PBF reliable?

The price and inventory of IRFH7004TR2PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFH7004TR2PBF is usually 5 days.

3.What payment methods are accepted for IRFH7004TR2PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFH7004TR2PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFH7004TR2PBF?

IRFH7004TR2PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFH7004TR2PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFH7004TR2PBF?

For technical support, including IRFH7004TR2PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFH7004TR2PBF requirements.

6.How does Aetrix verify that IRFH7004TR2PBF is sourced from the original manufacturer or authorized distributors?

All IRFH7004TR2PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFH7004TR2PBF meets industry standards.

7.What is the process for return or replacement of IRFH7004TR2PBF?

All IRFH7004TR2PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFH7004TR2PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFH7004TR2PBF part is unused and in its original packaging.

Return procedure for IRFH7004TR2PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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