Infineon Technologies IRFH7107TR2PBF

Overview

IRFH7107TR2PBF from Infineon Technologies is a 75 V, 75 A (at T_C = 25°C), N-channel enhancement-mode HEXFET® Power MOSFET in a PQFN 5×6 mm package with 8.5 mΩ R_DS(on) @ V_GS = 10 V, optimized for high-efficiency secondary-side synchronous rectification in DC-DC bricks and boost converters.

For engineers reviewing the IRFH7107TR2PBF datasheet, IRFH7107TR2PBF pinout, IRFH7107TR2PBF application, or IRFH7107TR2PBF equivalent, key selection criteria include low thermal resistance to PCB (1.2 °C/W), industry-standard pinout compatibility, 48 nC total gate charge, and MSL1 industrial qualification for high-reliability surface-mount manufacturing.

Technical Context

This device operates as a unidirectional power switch with an integrated body diode, featuring a gate threshold voltage of 2.0–4.0 V and a positive temperature coefficient for R_DS(on) (0.09 V/°C). Its low-profile 0.9 mm height enables high-power-density board layouts in space-constrained DC-DC modules.

The MOSFET delivers 104 W power dissipation at T_C = 25°C with junction-to-case (bottom) thermal resistance of 1.2 °C/W, supporting continuous conduction mode operation under high-current pulsed loads up to 300 A peak drain current.

Key Specifications

Pinout & Package

PQFN 5×6 mm package with exposed thermal pad on bottom side; 3-pin configuration (Drain, Source, Gate) arranged in industry-standard pinout for multi-vendor layout compatibility.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFH7107TR2PBF, IRFH7105TR2PBF trades voltage headroom for lower R_DS(on), while SiR626DP-T1-GE3 provides improved on-resistance consistency at the cost of increased switching energy-both require revalidation of gate drive loop stability and thermal margin.

Availability

IRFH7107TR2PBF is available at Aetrix Electronics and suitable for secondary-side synchronous rectification, DC-DC brick converters, and boost converter designs requiring stable component supply, long-term lifecycle support, and traceable industrial-grade sourcing.

Supply support for IRFH7107TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-current switching in server power supplies, telecom infrastructure, and industrial DC-DC conversion.

FAQ

What is the maximum continuous drain current at case temperature of 100°C?

The IRFH7107TR2PBF supports 300 A pulsed drain current but its continuous drain current drops to 11 A at T_C = 100°C per absolute maximum ratings. This reflects thermal derating due to reduced heat transfer efficiency at elevated case temperatures, not device failure-designs must ensure adequate PCB copper area or heatsinking to maintain T_C ≤ 70°C for full 75 A operation.

Does this MOSFET require a negative gate voltage for safe turn-off in high dv/dt environments?

No. The IRFH7107TR2PBF has a gate threshold voltage range of 2.0–4.0 V and is fully compatible with zero-to-10 V gate drive. Its 0.6 Ω gate resistance and low Crss (165 pF) provide inherent immunity to dv/dt-induced turn-on; no negative bias is needed unless operating above 100 V/ns slew rates in unshielded layouts.

Can the body diode be used for freewheeling in inductive load applications?

Yes-the integrated body diode supports continuous source current up to 45 A and pulsed current up to 300 A. With 28–42 ns reverse recovery time and 160–240 nC Q_rr, it is suitable for freewheeling in DC motor inverters and synchronous rectifiers, though external Schottky clamping may be added to reduce recovery loss in high-frequency (>300 kHz) operation.

Is the PQFN 5×6 mm package compatible with standard reflow profiles for lead-free soldering?

Yes. Rated MSL1 per JEDEC J-STD-020, the IRFH7107TR2PBF withstands peak reflow temperatures up to 260°C for 30 seconds without preconditioning. Its copper-exposed thermal pad ensures uniform heating and eliminates voiding risk when using standard Type 3 solder paste and ramp-soak-spike profiles.